TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 1
November 2008
TIP47/TIP48/TIP49/TIP50
NPN Silicon Transistor
• High Voltage and Switching Applications
• High Sustaining Voltage : VCEO(sus) = 250 - 400V
• 1A Rated Collector Current
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage : TIP47
: TIP48
: TIP49
: TIP50
350
400
450
500
V
V
V
V
VCEO Collector-Emitter Voltage : TIP47
: TIP48
: TIP49
: TIP50
250
300
350
400
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 1 A
ICP Collector Current (Pulse) 2 A
IB Base Current 0.6 A
PC Collector Dissipation (TC=25°C) 40 W
Collector Dissipation (Ta=25°C) 2 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 2
Electrical Characteristics* Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEX(sus)
Collector-Emitter Sustaining Voltage
: TIP47
: TIP48
: TIP49
: TIP50
IC = 30mA, IB = 0 250
300
350
400
V
V
V
V
ICEO Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
VCE = 150V, IB = 0
VCE = 200V, IB = 0
VCE = 250V, IB = 0
VCE = 300V, IB = 0
1
1
1
1
mA
mA
mA
mA
ICEX Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
VCE = 350V, VBE = 0
VCE = 400V, VBE = 0
VCE = 450V, VBE = 0
VCE = 500V, VBE = 0
1
1
1
1
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE * DC Current Gain VCE = 10V, IC = 0.3A
VCE = 10V, IC = 1A
30
10
150
VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1 V
VBE(sat) * Base-Emitter Saturation Voltage VCE = 10V, IC = 1A 1.5 V
fT Current Gain Bandwidth Product VCE =10V, IC = 0.2A, f =
1MHz
10 MHz
TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 3
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
0.01 0.1 1 4
1
10
100
1000
VCE = 10V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 4
0.01
0.1
1
10
IC = 5 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
TIP49
TIP48
TIP47
TIP50
D.C
1ms
500
m
s
100
m
s
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP47/TIP48/TIP49/TIP50 — NPN Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 4
Mechanical Dimensions
TO220
TIP47/TIP48/TIP49/TIP50 NPN Silicon TransistorTIP47/TIP48/TIP49/TIP50
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP47/TIP48/TIP49/TIP50 Rev. A1 5
Rev. I31
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Definition of Terms
ACEx®
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CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
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PDP-SPM™
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QFET®
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QT Optoelectronics™
Quiet Series™
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SuperSOT™-3
SuperSOT™-6
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The Power Franchise®
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Specifications may change in any manner without notice.
Preliminary First Production
This datasheet contains preliminary data; supplementary data will be pub-
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changes at any time without notice to improve design.
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This datasheet contains specifications on a product that has been discontin-
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