CREAT BY ART
- High efficiency, low VF.
- High current capavility
- High reliability
- High surge current capability
- Low power loss.
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 150 200 300 400 500 600 V
V
RMS
35 70 105 140 210 280 350 420 V
V
DC
50 100 150 200 300 400 500 600 V
I
F(AV)
A
Trr ns
Cj pF
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1405028 Version: G14
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
SFAF
506G
0.975 1.3 1.7
400
Typical junction capacitance (Note 3)
Typical thermal resistance 5
Operating junction temperature range - 55 to +150
70
Storage temperature range - 55 to +150
Maximum reverse current @ Rated V
R
T
J
=25 ℃
T
J
=125 ℃I
R
10 μA
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Maximum instantaneous forward voltage (Note 1)
I
F
= 5A V
F
V
Maximum reverse recovery time (Note 2) 35
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load I
FSM
125 A
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 5
SFAF
504G
SFAF
505G
SFAF
507G
SFAF
508G UNIT
Maximum repetitive peak reverse voltage
Case: ITO-220AC
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL SFAF
501G
SFAF
502G
SFAF
503G
SFAF501G thru SFAF508G
Taiwan Semiconductor
Isolated Glass Passivated Su
p
er Fast Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA ITO-220AC
CREAT BY ART
PART NO.
PART NO.
SFAF501G
SFAF501G
SFAF501G
(TA=25℃ unless otherwise noted)
Document Number: DS_D1405028 Version: G14
ORDERING INFORMATION
Green compound
DESCRIPTION
EXAMPLE
50 / Tube
PACKING
SFAF501G C0 C0
GREEN COMPOUND
CODE
SFAF501GHC0 H C0
RATINGS AND CHARACTERISTICS CURVES
AEC-Q101 qualified
PACKAGE
SFAF501G C0G C0 G
Note 1: "x" defines voltage from 50V (SFAF501G) to 600V (SFAF508G)
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE
SFAF501G thru SFAF508G
Taiwan Semiconductor
SFAF50xG
(Note 1) Prefix "H" C0 Suffix "G" ITO-220AC
AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE
0
1
2
3
4
5
6
050100150
AVERAGE FORWARD CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
RESISTIVE OR
INDUCTIVELOAD
WITH HEAT SINK
0
30
60
90
120
150
1 10 100
PEAK FORWARD SURGE CURRENT.
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine
0.1
1
10
100
1000
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE
CURRENT(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
TJ=25℃
TJ=100℃
TJ=75℃
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE. (V)
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300μs
1% Duty Cycle
SFAF505G-SFAF506G
SFAF501G-SFAF504G
SFAF507G-SFAF508G
CREAT BY ART
Min Max Min Max
A 4.30 4.70 0.169 0.185
B 2.50 3.10 0.098 0.122
C 2.30 2.90 0.091 0.114
D 0.46 0.76 0.018 0.030
E 6.30 6.90 0.248 0.272
F 9.60 10.30 0.378 0.406
G 3.00 3.40 0.118 0.134
H 0.00 1.60 0.000 0.063
I 0.95 1.45 0.037 0.057
J 0.50 0.90 0.020 0.035
K 2.40 3.20 0.094 0.126
L 14.80 15.50 0.583 0.610
M - 4.10 - 0.161
N - 1.80 - 0.071
O 12.60 13.80 0.496 0.543
P 4.95 5.20 0.195 0.205
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1405028 Version: G14
MARKING DIAGRAM
SFAF501G thru SFAF508G
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
40
50
60
70
80
90
100
1 10 100 1000
CAPACITANCE (pF)
REVERSE VOLTAGE. (V)
FIG. 5- TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405028 Version: G14
SFAF501G thru SFAF508G
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
