Silicon Hyperabrupt Tuning Diodes DKV6550 Series ALPHA IND/ SEMICONDUCTOR 4YSE D T-OI-"N4 Mm 0545443 0001314 &1T MALP Features @ Octave Frequency Tuning from 0 to 10 Volts @ +1.5% Linearity for a 1.7:1 Tuning Ratio without Compensation Network Types DKV6550 Series CKV2010 Series DKV3801 Series DKV3802 Series DKV3803 Series DKV3804 Series Description Alpha microwave hyperabrupt diodes are designed for linear wideband tuning of microwave filters, resona- tors, and local oscillators. Linear tuning, not possible with conventional abrupt-junction tuning diodes, is ac- complished by maintaining an accurate silicon doping profile using ion-implantation precision control tech- niques. The DKV6550 series hyperabrupt diodes offer wide bandwidth linear tuning with low bias voltage. For ex- ample, a 20-volt hyperabrupt diode can provide the same tuning variation as a 90-volt abrupt-junction diode, as illustrated in Figure 3. When capacitance and tuning ratio values are equal, a hyperabrupt diode will have a Q (measured at -4 volts, These diodes are available in most of the Alpha ceramic and glass packages. See table on next page. They can be supplied in chip form or mounted on a variety of chip carriers. All chips are passivated with silicon dioxide for high reliability, low leakage current and low post tuning drift. The characteristics of the model DKV6550 diodes in the standard Alpha 023-001 ceramic package (C,=0.22 pF) are shown in Figures 1, 2 and 3. Hyperabrupt diodes are offered in various package styles to suit current applications. See the following tables for further details. Capacitance values may change slightly due to variations in package parasitics. Absolute Maximum Ratings 50 MHz) approximately 1/2 to 1/3 that of an abrupt- Parameter Symbol| Value Units junction diode. This inherent Q reduction is often out- Reverse Voltage V, 22 Volts weighed by the advantages of linearity and low bias requirements of hyperabrupt diodes. Forward Current I; 40 mAde Power Dissipation P, 250 mw Electrical Characteristi oan ecirica aracteristics Operating Temperature; T,, | -55 to +125 C at 25C Storage Temperature Tyg | 55 to +175 C Package Outline 023-001 Symbol Vor la Cc, Q Parameter Reverse Breakdown| Reverse Leakage Diode Capacitance Figure of Merit Voltage Current (C,=0.22pF) Unit Voe nADC pF Test Condition 1,=10nAde V,=20Vde f=1 MHz t=50 MHz V,24Vde V,=20Vde VR=4Vde Type Number Min. Max. Min. Max. Min. Max. Min. DKV6550-06 22 50 .90 1.10 .35 45 500 DKV6550-12 22 50 1.35 1.65 45 55 500 DKV6550-18 22 50 1.80 2.20 55 .70 400 DKV6550-24 22 50 2.70 3.30 70 .90 400 DKV6550-30 22 50 4.50 5.50 1.00 1.30 400 4-16 ALPHA IND/ SEMICONDUCTOR Type Numbers for Various Package Styles Silicon Hyperabrupt Tuning Diodes DKV6550 Series 48E D WM 0585443 0001315 S5b MALE FOp79 023-001 Chip 075-001 168-001 325-011 130-011 Package Outline Package Package Package Package (C, = 0.22 pF) (C, = 0.1 pF) (C, = 0.18 pF) (C, = 0.12 pF) (Cc, = 0.15 pF) DKV6550-06 CKV2010-19 DKV3801-55 DKV3802-55 DKV3803-55 DKV3804-55 DKV6550-12 CKV2010-20 DKV3801 -56 DKV3802-56 DKV3803-56 DKV3804-56 DKV6550-18 CKV2010-21 DKV3801-57 DKV3802-57 DKV3803-57 DKV3804-57 DKV6550-24 CKV2010-22 DKV3801 -58 DKV3802-58 DKV3803-58 DKV3804-58 DKV6550-30 CKV2010-23 DKV3801 -59 DKV3802-59 DKV3803-59 DKV3804-59 5000;- 4000;- ' f = 50 MHz 3000;- / 2000! / DKV6550-06,-1 2/ -DKVE5SO-18,-24,-30 1000 800 TTTT 600 Figure of Merit, Q itt 400 Diode Capacitance C, (pF) 200 A 0 1 -3 75 a4 po i VR. Reverse Voltage, (Vdc) 2 3 4 567 910 20 Vp. Reverse Voltage, (Vdc) Figure 1. Typical Diode Capacitance vs. Tuning Voltage Figure 2. Typical Q vs. Tuning Voltage 2.4- Hyperabrupt ences 22 jf 2.0F / A het 1.8 Frequency Ratio vs Voltage For Hyperabrupt and Abrupt Diode 1.6 fv/foFrequency Ratio 1.4 Cr, = 1.42 pf 1.2 C stray = 0.1 pf 1.0 L 1 l i 1 1 o 10 20 30 40 50 660 70 80 90 Va Reverse Voltage Figure 3. Frequency Ratio vs. Tuning Voltage 4-17