SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Cool MOSTM==Power Transistor COOLMOS Power Semiconductors *=New revolutionary high voltage technology * Ultra low gate charge Product Summary *=Periodic avalanche rated VDS @ Tjmax 650 V * Extreme dv/dt rated RDS(on) 0.38 *=Optimized capacitances ID 11 A *=Improved noise immunity P-TO262 P-TO263-3-2 P-TO220-3-1 *=Former development designation: SPPx2N60S5/SPBx2N60S5 Type Package Ordering Code Marking SPP11N60S5 P-TO220-3-1 Q67040-S4198 11N60S5 SPB11N60S5 P-TO263-3-2 Q67040-S4199 11N60S5 SPI11N60S5 P-TO262 Q67040-S4338 11N60S5 D,2 G,1 S,3 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25C 11 TC=100C 7 ID puls 22 EAS 340 EAR 0.6 Avalanche current (repetitive, limited by Tjmax ) IAR 11 A Reverse diode dv/dt dv/dt 6 kV/s Gate source voltage VGS 20 V Power dissipation Ptot 125 W -55... +150 C Pulsed drain current 1) TC=25C Avalanche energy, single pulse mJ ID = 5.5 A, VDD = 50 V Avalanche energy (repetitive, limited by Tjmax ) ID = 11 A, VDD = 50 V IS =11A, VDS<VDSS, di/dt=100A/s, Tjmax =150C TC=25C Operating and storage temperature Tj , Tstg 1 2001-07-25 Preliminary data SPI11N60S5 SPP11N60S5, SPB11N60S5 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Thermal Characteristics Thermal resistance, junction - case RthJC - - 1 K/W Thermal resistance, junction - ambient RthJA - - 62 @ min. footprint - - 62 @ 6 cm2 cooling area 2) - 35 - (Leaded and through-hole packages) SMD version, device on PCB: RthJA Static Characteristics, at Tj = 25 C, unless otherwise specified Drain-source breakdown voltage V(BR)DSS 600 - - V VGS(th) 3.5 4.5 5.5 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 0.5 mA, Tj = 25 C Zero gate voltage drain current, VDS=VDSS A IDSS VGS = 0 V, Tj = 25 C - - 25 VGS = 0 V, Tj = 150 C - - 250 IGSS - - 100 nA RDS(on) - 0.34 0.38 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 7 A 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 2 2001-07-25 Preliminary data SPI11N60S5 SPP11N60S5, SPB11N60S5 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 6 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =7A Input capacitance Ciss VGS =0V, VDS =25V, - 1460 - Output capacitance Coss f=1MHz - 610 - Reverse transfer capacitance Crss - 21 - Turn-on delay time td(on) VDD =350V, VGS =10V, - 130 - Rise time tr ID =11A, RG =6.8 - 35 - Turn-off delay time td(off) - 150 225 Fall time tf - 20 30 - 10.5 - - 24 - - 41.5 54 - - 11 - - 22 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Total gate charge Qg VDD =350V, ID =11A VDD =350V, ID =11A, nC VGS =0 to 10V Reverse Diode Inverse diode continuous IS TC=25C A forward current Inverse diode direct ISM current,pulsed Inverse diode forward voltage VSD VGS =0V, IF =11A - 1 1.2 V Reverse recovery time trr VR =350V, IF=lS, - 650 1105 ns Reverse recovery charge Qrr diF /dt=100A/s - 7.9 - C 3 2001-07-25 SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Power dissipation Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS 10 V SPP11N60S5 12 140 W SPP11N60S5 A 120 10 110 9 8 90 ID Ptot 100 80 7 70 6 60 5 50 4 40 3 30 2 20 1 10 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TC 160 TC Safe operating area Transient thermal impedance ID=f (VDS) ZthJC = f (tp ) parameter: D=0.01, TC =25C parameter : D = tp /T 10 C 2 SPP11N60S5 10 1 K/W SPP11N60S5 A 10 0 on ) = ID V DS 10 1 Z thJC /I D tp = 20.0s 10 -1 R DS ( 100 s 10 -2 D = 0.50 0.20 10 0 1 ms 10 -3 0.10 0.05 10 ms 10 -4 0.02 single pulse 0.01 DC 10 -1 0 10 10 1 10 2 V 10 10 -5 -7 10 3 VDS 4 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 2001-07-25 SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Typ. output characteristic Drain-source on-resistance ID = f (VDS) RDS(on) = f (Tj ) Parameter: VGS, Tj = 25 C parameter : ID = 7 A, VGS = 10 V 35 2.1 20V 12V 1.8 10V 1.6 RDS(on) A ID 25 20 SPP11N60S5 1.4 1.2 9V 1 15 0.8 8V 10 0.6 98% 0.4 7V 5 typ 0.2 6V 0 0 5 10 15 0 -60 25 V -20 20 60 100 C VDS Typ. transfer characteristics Typ. capacitances ID = f ( VGS ) C = f (VDS) VDS 2 x ID x RDS(on)max parameter: VGS =0 V, f=1 MHz 10 4 32 pF A Ciss 10 3 24 20 C ID 180 Tj Coss 10 2 16 12 10 1 8 Crss 4 0 0 4 8 12 10 0 0 20 VGS V 5 10 20 30 40 50 60 70 80 V 100 VDS 2001-07-25 Preliminary data SPI11N60S5 SPP11N60S5, SPB11N60S5 Avalanche energy Avalanche SOA EAS = f (Tj ) IAR = f (tAR ) par.: ID =5.5A, VDD =50V par.: Tj 150 C 350 11 A mJ 9 8 IAR EAS 250 200 7 6 5 150 Tj (START) =25C 4 100 3 Tj (START) =125C 2 50 1 0 20 40 60 80 100 C 120 0 -3 10 160 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR Tj Drain-source breakdown voltage Gate threshold voltage V(BR)DSS = f (Tj ) VGS(th) = f (Tj) parameter: VGS = VDS , ID = 0.5 mA SPP11N60S5 7 720 V 680 V GS(th) V (BR)DSS V 660 5 max. 4 640 typ. 620 3 600 min. 2 580 1 560 540 -60 -20 20 60 100 C 0 -60 180 Tj -20 20 60 100 C 180 Tj 6 2001-07-25 Preliminary data SPI11N60S5 SPP11N60S5, SPB11N60S5 Forward characteristics of reverse diode Typ. gate charge IF = f (VSD ) VGS = f (QGate ) parameter: Tj , tp = 10 s parameter: ID = 11 A pulsed 10 2 SPP11N60S5 16 SPP11N60S5 V A 12 VGS IF 10 1 0,2 VDS max 0,8 VDS max 10 8 6 10 0 Tj = 25 C typ 4 Tj = 150 C typ Tj = 25 C (98%) 2 Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 VSD 7 10 20 30 40 50 nC Qg 65 2001-07-25 SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data P-TO220-3-1 P-TO220-3-1 dimensions [mm] symbol [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 TO-263 (DPak/P-TO220SMD) dimensions symbol A [inch] min max min max 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E 2.54 typ. 0.65 0.85 0.1 typ. 0.0256 0.0335 5.08 typ. 4.30 4.50 0.2 typ. 0.1693 0.1772 F G H 8 [mm] K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 15 typ. 0.00 0.20 0.5906 typ. 0.0000 0.0079 Q 4.20 0.1654 R S 8 max 2.40 3.00 8 max 0.0945 0.1181 T 0.40 0.0157 5.20 0.60 0.2047 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y Z 9.40 0.3701 16.15 0.6358 2001-07-25 Preliminary data SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262-3-1 9 2001-07-25 Preliminary data SPI11N60S5 SPP11N60S5, SPB11N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. 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