International Rectifier PD-9.1090 IRL640S HEXFET Power MOSFET @ Surface Mount Dynamic dv/dt Repetitive Aval Fast Switching Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low Available in Tape & Reel Logic-Level Gate Drive Rpsv(on) Specified at Vas=4V & 5V Rating janche Rated Voss = 200V Rosion) = 0.18Q Ipn=17A on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W ina typical surface mount application. Absolute Maximum Ratings SMD-220 Parameter Max. Units Ip @ To = 25C Continuous Drain Current, Vas @ 5.0 V 17 Ip @ Tc = 100C | Continuous Drain Current, Ves @ 5.0 V 1 A lpm Pulsed Drain Current 68 Po @ Tc= 25C _| Power Dissipation 125 Ww Pp @ Ta= 25C | Pawer Dissipation (PCB Mount)** 3.1 Linear Derating Factor 1.0 WEC Linear Derating Factor (PCB Mount)** 0.025 Vas Gate-to-Source Voltage +10 Vv Eas Single Pulse Avalanche Energy @ 580 mJ lar Avalanche Current 10 A Ear Repetitive Avalanche Energy 13 mJ av/dt Peak Diode Recovery dv/dt @ _ tk BO Vins _| Tu, Tsta Junction and Storage Temperature Range -55 to +150 C _Soldering Temperature, for 10 seconds 300 (1.6mm from case) - Thermal Resistance : Parameter | Min. Typ. Max. Units | Rac Junction-to-Case _ _ 1.0 Resa Junction-to-Ambient (PCB mount)** = 40 CMW | Rea Junction-to-Ambient 62 ** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.IRL640S Electrical Characteristics @ Ts = 25C (unless otherwise specified) L Parameter : | Min. | Typ. | Max. | Units | Test Conditions Vierypss - Drain-to-Source Breakdown Voltage 200 | | V_|Vas=0V, In= 250nA AV erypss/ATu! Breakdown Voltage Temp. Coefficient | [0.27 | wre \ Reference to 25C, Ip= 1mA rs OO t | Rosion) | Static Drain-to-Source On-Resistance [ _ | oy | a aw = "Veseny | Gate Threshold Voltage [40 | 20 v_ | Vos=Vas, lo= 25014 | Os ___ | Forward Transconductance | 16 i | 5 : | Vos=50V, Ip=10A | loss : Drain-to-Source Leakage Current | - =| 2s t 25 | HA Vos=200V,VaseOV : _ | 250 / Vps=160V, Vas=0V, Ty=125C [ecw | Gate-to-Source Forward Leakage | = | 100 | a Ves=10V . | Gate-to-Source Reverse Leakage I _ | -100 Vogs=-10V Qy Total Gate Charge , _ 66 Ips 17A Gas Gate-to-Source Charge | 90 | nC | Vog=160V | Qog | Gate-to-Drain ("Miller") Charge | = | 38 Vas=5.0V See Fig. 6 and 13 tajon) Tum-On Delay Time _ 8.90 _ Vop=100V ty ____ Rise Time 83 | | A, [I 17A tarot ____Tum-Off Delay Time _ 44 | Re=4.6Q Ith __| Fall Time _ 52 = Ro=5.7Q See Figure 10 @ Lo Internal Drain Inductance _ 45 Bo toeen) i Po | - _ . nH | from package al Ls Internal Source Inductance - ' 75 = and center of die contact 8 | Cis Input Capacitance _"T) 4800. Vas=0V Coss Output Capacitance [ =] 400. | pF | Vos= 25V | Cres | Reverse Transfer Capacitance ; | 120] } f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter * Min. | Typ. |! Max. | Units | Test Conditions Is Continuous Source Current _. _ 47 MOSFET symbot o (Body Diode) : A showing the Ism Pulsed Source Current | _ _ 68 integral reverse (Body Diode) @ ' | p-n junction diode. 8 Vsp Diode Forward Voltage _ [20 Vo | Ty=25C, I5=17A, Vas=0V @ be : Reverse Recovery Time 310 | 470 ns | Ty=25C, Ir=17A Qn | Reverse Recovery Charge , | 32, 48 | pC 'difdt=-100A/us fon ' Forward Turn-On Time : ; Intrinsis turn-on fime is neglegible (turn-on is dominated by LstLo) Notes: @ Repetitive rating; pulse width limited by & Isps17A, di/dt<150A/us, Vop<V(BR)DsSs, max. junction temperature (See Figure 11) Ty<150C Vop=50V, starting Ty=25C, L=3.0mH @ Pulse width < 300 us; duty cycle <2%. Ra=25, las=17A (See Figure 12)Ip, Drain Current (Amps) tp.. Drain Current (Amps) ag 102 wo! Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C - 4 L | - i 1 | =} L Vpg = BOV 20us PULSE WIDT: 2.5 ae 3.5 ag ao f. Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics o Rosion): Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) ESET | FRE IRL640S 10 10 Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tc=150C P}-F 4-H -fe Tea 5G -40 -2) 9 23 0 GC RO 190 129 143 toe Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. TemperatureIRL640S [TeaR | Capacitance (pF) 10 Ves, Gate-to-Source Voltage (volts) yoo rt 3 eo 2C 29 ao 5 ie Vpg, Drain-to-Source Voltage (volts) Qa, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage OPERATION IN THIS ARCA LIMITED o _ ay . e oe "Os (Obs) & rat Do 4 z= a T 5 & 5 = o G & = 5 3 @ 19 o a a 6 a L a a J=150C a4 igs 7 Ov INGLE OSE og to 0.8 1.9 2 14 5 2 EF 4g? 5 492 2 5 493 Vp, Source-to-Drain Voltage (volts) Vog, Drain-to-Source Voltage {volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward VoltageIRL640S Vpp = \is.ov E Pulse Width < tus x Outy Factor < 0.1% . aa: . TAs 2 Fig 10a. Switching Time Test Circuit 3 c Vos Ss DS a 90%. ~~ a) 10% . : Vas Te, Case Temperature (C) tatony tr latofty) tt Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature o 3 N oO Ww Cc o a wn ' oO c tpt at s edu Lael a7 To 2 Bj E Ld FH f ote . w baat SINGLE PULSE _ NOTES: | ry on 1, DUTY FACTOR, Beri/t2 ah E EUQu fb itil a. peas 1y*Pom Zempe + Te (THERMAL RESPONSE) 195 194 <9? sore o.t 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRL640S Vary tp to obtain Vos required las lag Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform bad 309 Es, Single Pulse Energy (mJ) = Ay a 00 aoe Starting T,, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current __ _.,.Current Regulator _ c Same Type as D.U-T. Vas lp la Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit Appendix B: Package Outline Mechanical Drawing Appendix C: Part Marking Information Appendix D: Tape & Reel InformationAppendix A Fig 14. For N-Channel HEXFETs DBAULT. Cireuk Layout Considerations + Low Stray Inductance + Ground Plane @ Low Leakage Inductance Current Transformer + dv/dt controlled by Rg + Oriver same type as D.U.T. + Isp controled by Duty Factor "D" *O.U.T.- Davice Under Test Appendix B SMD-220 Outline Dimensions are shown in millimeters (inches) IRL640S Peak Diode Recovery dv/dt Test Circuit Pw Driver Gate Drive D Beriod iod W Pari I Veg = 10V" D.U.T. Isp Waveform Reverse Body Ques F Forward oT an Diode Reeovery Current @ D.U.T. Vpg Waveform Re-Apphed. voltage Inductor Current Ph Ripple s 5% Body Di orward Drop * Ves = 5V for Logic Level Davices Package Ouiline a 10.54 (.415) _ -B- ) 10.28 (408) 4.69 (185) 10.16 (a00: + 1665) _ . . 1.40 (.085) TA : FOC 18) 1.32 (062) ! REF " MAX. | LI 1.22 (048) T : 4 6.47 (.265) i 93 6.18 (.243) 1.78 (070) _ 18.49 (.610) 2socri0 { { 1.24 (050) \ 3 14.73 (.580) f { 2.28 (.090) . = al | 5.26 (.208) Cy] 1 | sa 2.61 4.103) 4.765 (.1B8) . . + 2.92 (081) ay 1-40 6055) lf 1.39 (.058) 3 1.44 (045) ~ gx 0-99 6037) 0.55 (.022) i 4.94 (066) _ | a. ee 350) 0.68 (.027) 0.46 6.018) [5.08 e200) LL ~ (@ 0.28 cate) Gaye) NOTES 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI 145M, 1982 3 CONTROLLING DIMENSION. INCH 4 HEATSINK & LEAD DIMENSIONS OO NOT INCLUDE BUARS. LEAD ASSIGNMENTS 1. GATE 2 DRAIN 3 SQUACE MINIMUM RECOMMENDED FOOTPRINT 19-43 (450) 1 mo ~T | 8.89 (.350} : | | : Le + 41778 TOS sc 1 i: L 2.84,( 100) 2.08 (.082) 1 *IRL640S Part Marking Information Appendix C SMD-220 EXAMPLE: THIS IS AN IRFS530S WITH INTERNATIONAL PART NUMBER ASSEMBLY LOT CODE 9B1M RECTIFIER f =a F530S Logo ran ozs pe 9B 1M DATE CODE ASSEMBLY yoy nw) LOT CODE YY = YEAR WW = WEEK | Tape & Reel Information Appendix D SMD-220 Tape & Reet TRR {o eo 0} 1,60 (083) 1 50 (.059) 1 60 ( 063) 4.29 C961), OD TESCesBy 9 368 1.0148) iO .953) i 0342 (0735) i i i 7 FEED DIRECTION 1:88 (073) | 11.60 (457) ,_ _ 068) | 1140 (449) . oT 7 6 [.065) 45.42 (808) zs 30 (957) i 15.22 (.601) 3.90 (941) TRL oa0 : \ \, foooc se gt 75 (.069) r |-t 125 (049) Aa# 10.90 (429) _ et . 4.72 4.188) 16.70 (421) _ oe Se 16.10 (.834) 4.52 (178) 15.90 (626) FEED OIRECTION ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 13.50 (532) XQ @ 12.60 (504) 26.40 (1.039) | S440 (Get) SMD-220 Tape & Reel When ordering, indicate the part number, part orientation, and the quantity. Quantities are in multipias of 800 pieces per reat for both TRL and TAR. D 360.00 * (14.173) ne | MAX \ / | | t Printed on Signet recycled offset: | made from 50% recycled waste paper. including 10% de-inkea, post-consumer waste. WORLD HEADQUARTERS: 233 Kansas St.. El Segundo, Cal:fornia 90245, Tel. (310) 322-3331, Twx: 4720403 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 988 England. Tel: (0883) 713215, Twx: 95219 IR CANADA: 101 Bentley St.. Markham, Ontario LR 3L1, Tat: 418) 475-1897. IR GERMANY: Saalburgstrasse 157, D-6380 Bad Homburg, Tel: 6172-37068. WR ITALY: V'a Liguria 49 10071 Bongaro, Torino, Tel: (011) 470 1484. IR FAR EAST: K&H Building, 30-4 Nishiikebukuo 3-Chome, Toshima-ku. Tokyo 71 Japan, Tel: (03) 983 0641. IR SOUTHEAST ASIA: 190 Misdle Road, HEX 10-01 Fortune Centre, Singapore 0798, Tal: (65) 336 3922. Sales Offices, Agents and Distributors in Major Cities Throughout the World. Printed in U.S.A. 8/94 5m Data and spscihcations subpect tc change artbput noua. 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