SiT1602B Low Power, Standard Frequency Oscillator Features Applications 52 standard frequencies between 3.57 MHz and 77.76 MHz 100% pin-to-pin drop-in replacement to quartz-based XO Excellent total frequency stability as low as 20 ppm Operating temperature from -40C to 85C. For 125C and/or -55C options, refer to SiT1618, SiT8918, SiT8920 Low power consumption of 3.5 mA typical at 1.8 V Qualify just one device with 1.62 V to 3.63 V continuous supply voltage Standby mode for longer battery life Fast startup time of 5 ms LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and Field Programmable Oscillators RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free For AEC-Q100 oscillators, refer to SiT8924 and SiT8925 Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, GPON, EPON, etc Ideal for high-speed serial protocols such as: USB, SATA, SAS, Firewire, 100M/1G/10G Ethernet, etc. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25C and nominal supply voltage. Table 1. Electrical Characteristics Parameters Output Frequency Range Symbol f Min. Typ. Max. Condition Unit Frequency Range 52 standard frequencies between MHz 3.57 MHz and 77.76 MHz Refer to Table 13 for the exact list of supported frequencies Frequency Stability and Aging Frequency Stability F_stab -20 - +20 ppm -25 - +25 ppm - +50 ppm -50 Inclusive of initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply voltage and load. Operating Temperature Range Operating Temperature Range T_use -20 - +70 C Extended Commercial -40 - +85 C Industrial Supply Voltage and Current Consumption Supply Voltage Options Current Consumption 1.62 1.8 1.98 V Vdd_2.5 2.25 2.5 2.75 V Vdd_2.8 2.52 2.8 3.08 V Vdd_3.0 2.7 3.0 3.3 V Vdd_3.3 2.97 3.3 3.63 V Vdd_XX 2.25 - 3.63 V Vdd_YY 1.62 - 3.63 V Idd - 3.8 4.5 mA No load condition, f = 20 MHz, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY - 3.7 4.2 mA No load condition, f = 20 MHz, Vdd_2.5 - 3.5 4.1 mA No load condition, f = 20 MHz, Vdd_1.8 - - 4.2 mA Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY. OE = GND, Output in high-Z state - - 4.0 mA Vdd_1.8. OE = GND, Output in high-Z state - 2.6 4.3 A ST = GND, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY. Output is weakly pulled down - 1.4 2.5 A ST = GND, Vdd_2.5, Output is weakly pulled down - 0.6 1.3 A ST = GND, Vdd_1.8, Output is weakly pulled down OE Disable Current I_OD Standby Current I_std Rev 1.07 Contact SiTime for 1.5 V support Vdd_1.8 10 March 2021 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition LVCMOS Output Characteristics DC 45 - 55 % All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6 Tr, Tf - 1 2 ns 20% - 80% Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3 - 1.3 2.5 ns 20% - 80% Vdd_1.8 - - 2 ns 20% - 80% Vdd_XX - - 2.7 ns 20% - 80% Vdd_YY Duty Cycle Rise/Fall Time Output High Voltage VOH 90% - - Vdd IOH = -4 mA (Vdd_3.0 and Vdd_3.3) IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5) IOH = -2 mA (Vdd_1.8) Output Low Voltage VOL - - 10% Vdd IOH = -4 mA (Vdd_3.0 and Vdd_3.3) IOH = -3 mA (Vdd_2.8 and Vdd_ 2.5) IOH = -2 mA (Vdd_1.8) Input High Voltage VIH 70% - - Vdd Pin 1, OE or ST Input Low Voltage VIL - - 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in 50 87 150 k Pin 1, OE logic high or logic low, or ST logic high 2 - - M Pin 1, ST logic low Input Characteristics Startup and Resume Timing T_start - - 5 ms Measured from the time Vdd reaches its rated minimum value T_oe - - 138 ns T_resume - - 5 ms f = 77.76 MHz. For other frequencies, T_oe = 100 ns + 3*cycles Measured from the time ST pin crosses 50% threshold Startup Time Enable/Disable Time Resume Time Jitter RMS Period Jitter T_jitt Peak-to-peak Period Jitter T_pk RMS Phase Jitter (random) T_phj - 1.8 3 ps - - 3.3 ps - 12 25 ps - 14 30 ps - 0.5 0.9 ps - 1.3 2 ps - - 1.4 ps - - 2.3 ps f = 75 MHz, Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, f = 75 MHz, Vdd_YY f = 75 MHz, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX, Vdd_YY f = 75 MHz, Vdd_1.8 f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_1.8, Vdd_2.5, Vdd_2.8, Vdd_3.0, Vdd_3.3, Vdd_XX f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd_YY f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd_YY Table 2. Pin Description Pin Symbol Functionality Output Enable OE/ST /NC 1 Standby H[1]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. 2 GND Power Any voltage between 0 and Vdd or Open[1]: Specified frequency output. Pin 1 has no function. Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[2] No Connect Top View H[1]: specified frequency output L: output is high impedance. Only output driver is disabled. OE/ST /NC VDD GND OUT Figure 1. Pin Assignments Notes: 1. In OE or ST mode, a pull-up resistor of 10 k or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 F or higher between Vdd and GND is required. Rev 1.07 Page 2 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C Vdd -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C Junction Temperature[3] - 150 C Note: 3. Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[4] Package JA, 4 Layer Board JA, 2 Layer Board JC, Bottom 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 (C/W) (C/W) (C/W) Note: 4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[5] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 70C 80C 85C 95C Note: 5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Rev 1.07 Page 3 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Test Circuit and Waveform[6] Vdd Vout 4 Power Supply Test Point tr 3 80% Vdd 50% 15pF (including probe and fixture capacitance) 0.1 uF 2 1 tf 20% Vdd High Pulse (TH) Low Pulse (TL) Period Vdd OE/ST Function 1 k Figure 3. Waveform Figure 2. Test Circuit Note: 6. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd Pin 4 Voltage T_start [7] No Glitch during start up T_resume ST Voltage CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_resume: Time to resume from ST Figure 4. Startup Timing (OE/ ST Mode) Figure 5. Standby Resume Timing ( ST Mode Only) Vdd Vdd 50% Vdd OE Voltage OE Voltage T_oe 50% Vdd T_oe CLK Output CLK Output HZ HZ T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode Figure 6. OE Enable Timing (OE Mode Only) Note: 7. Rev 1.07 Figure 7. OE Disable Timing (OE Mode Only) SiT1602 has "no runt" pulses and "no glitch" output during startup or resume. Page 4 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Performance Plots[8] 1.8 2.5 2.8 3.0 3.3 5.2 5.0 20 4.8 15 Frequency (ppm) 4.6 Idd (mA) 4.4 4.2 4.0 3.8 3.6 DUT1 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7 DUT8 DUT9 DUT10 10 5 0 -5 -10 3.4 -15 3.2 -20 3.0 10 20 30 40 50 60 70 -40 80 Figure 8. Idd vs Frequency -20 0 40 60 80 Figure 9. Frequency vs Temperature 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 55 4.0 54 3.5 53 3.0 Duty cycle (%) RMS period jitter (ps) 20 2.5 2.0 1.5 1.0 52 51 50 49 48 47 0.5 46 0.0 10 20 30 40 50 60 70 45 80 10 Figure 10. RMS Period Jitter vs Frequency 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 2.5 2.0 2.0 1.5 1.0 40 50 60 70 80 2.5 V 2.8 V 3.0 V 3.3 V 1.5 1.0 0.5 0.5 0.0 0.0 -40 -15 10 35 60 -40 85 Figure 12. 20%-80% Rise Time vs Temperature Rev 1.07 30 Figure 11. Duty Cycle vs Frequency Fall time (ns) Rise time (ns) 1.8 V 20 -15 10 35 60 85 Figure 13. 20%-80% Fall Time vs Temperature Page 5 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Performance Plots[8] (continued) 2.5 V 2.8 V 3.0 V 1.8 V 3.3 V 0.9 1.8 0.8 1.6 0.7 IPJ (ps) IPJ (ps) 1.8 V 2.0 1.4 2.5 V 2.8 V 3.0 V 3.3 V 0.6 0.5 1.2 0.4 1.0 10 20 30 40 50 60 70 10 80 Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[9] 20 30 40 50 60 70 80 Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[9] Notes: 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz. Rev 1.07 Page 6 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Programmable Drive Strength High Output Load Capability The SiT1602 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3 V SiT1602 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by then increasing the drive strength setting on the SiT1602. Improves the downstream clock receiver's (RX) jitter by decreasing (speeding up) the clock rise/fall time. Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the SiTime Application Notes section. EMI Reduction by Slowing Rise/Fall Time SiT1602 Drive Strength Selection Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. trise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 10 Harmonic amplitude (dB) 0 -10 -20 -30 Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. Select the table that matches the SiT1602 nominal supply voltage (1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V). 2. Select the capacitive load column that matches the application requirement (5 pF to 60 pF) 3. Under the capacitive load column, select the desired rise/fall times. 4. The left-most column represents the part number code for the corresponding drive strength. 5. Add the drive strength code to the part number for ordering purposes. Calculating Maximum Frequency -40 -50 -60 -70 -80 The SiT1602 can support up to 60 pF or higher in maximum capacitive loads with drive strength settings. Refer to the Rise/Fall Time Tables (Table 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. 1 3 5 7 9 11 Any given rise/fall time in Table 7 through 11 dictates the maximum frequency under which the oscillator can operate with guaranteed full output swing over the entire operating temperature range. This max frequency can be calculated as the following: Harmonic number Max Frequency = Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time 1 5 x Trf_20/80 where Trf_20/80 is the typical value for 20%-80% rise/fall time. Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. Example 1 Calculate fMAX for the following condition: Vdd = 1.8 V (Table 7) Capacitive Load: 30 pF Desired Tr/f time = 3 ns (rise/fall time part number code = E) fMAX = 66.666660 Part number for the above example: SiT1602BIE12-18E-66.666660 Drive strength code is inserted here. Default setting is "-" Rev 1.07 Page 7 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 8. Vdd = 2.5 V (Vdd_2.5) Rise/Fall Times for Specific CLOAD Table 7. Vdd = 1.8 V (Vdd_1.8) Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E U F or "": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R B T E or "": default U F 4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 Table 9. Vdd = 2.8 V (Vdd_2.8) Rise/Fall Times for Specific CLOAD Table 10. Vdd = 3.0 V (Vdd_3.0) Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD L A R B T 5 pF 3.77 1.94 1.29 0.97 0.55 15 pF 7.54 3.90 2.57 2.00 1.12 30 pF 12.28 7.03 4.72 3.54 2.08 45 pF 19.57 10.24 7.01 5.43 3.22 60 pF 25.27 13.34 9.06 6.93 4.08 E or "": default U F 0.44 0.34 0.29 1.00 0.88 0.81 1.83 1.64 1.48 2.82 2.52 2.29 3.67 3.30 2.99 Drive Strength \ CLOAD L A R B T or "": default E U F 5 pF 3.60 1.84 1.22 0.89 15 pF 7.21 3.71 2.46 1.92 30 pF 11.97 6.72 4.54 3.39 45 pF 18.74 9.86 6.76 5.20 60 pF 24.30 12.68 8.62 6.64 0.51 0.38 0.30 0.27 1.00 0.92 0.83 0.76 1.97 1.72 1.55 1.39 3.07 2.71 2.40 2.16 3.90 3.51 3.13 2.85 Table 11. Vdd = 3.3 V (Vdd_3.3) Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD L A R B 5 pF 3.39 1.74 1.16 0.81 15 pF 6.88 3.50 2.33 1.82 30 pF 11.63 6.38 4.29 3.22 45 pF 17.56 8.98 6.04 4.52 60 pF 23.59 12.19 8.34 6.33 T or "": default E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 Rev 1.07 Page 8 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Pin 1 Configuration Options (OE, ST , or NC) Pin 1 of the SiT1602 can be factory-programmed to support three modes: Output Enable (OE), standby (ST ) or No Connect (NC). These modes can also be programmed with the Time Machine using field programmable devices. Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in <1 s. Figure 17. Startup Waveform vs. Vdd Standby (ST ) Mode In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The current is reduced to a standby current, typically in the range of a few A. When ST is pulled High, the device goes through the "resume" process, which can take up to 5 ms. No Connect (NC) Mode In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level on pin 1. Figure 18. Startup Waveform vs. Vdd (Zoomed-in View of Figure 17) Instant Samples with Time Machine and Field Programmable Oscillators Table 12 below summarizes the key relevant parameters in the operation of the device in OE, ST , or NC mode. Table 12. OE vs. ST vs. NC OE ST NC Active current 20 MHz (max, 1.8 V) 4.1 mA 4.1 mA 4.1 mA OE disable current (max. 1.8 V) 4 mA N/A N/A 0.6 A N/A 138 ns N/A N/A N/A 5 ms N/A High Z weak pull-down N/A Standby current (typical 1.8 V) OE enable time at 77.76 MHz (max) Resume time from standby (max, all frequency) Output driver in OE disable/standby mode N/A SiTime supports a field programmable version of the SiT1602 low power oscillator for fast prototyping and real time customization of features. The field programmable devices (FP devices) are available for all five standard SiT1602 package sizes and can be configured to one's exact specification using the Time Machine II, an USB powered MEMS oscillator programmer. Customizable Features of the SiT1602 FP Devices Include Output on Startup and Resume The SiT1602 comes with gated output. Its clock output is accurate to the rated frequency stability within the first pulse from initial device startup or resume from the standby mode. In addition, the SiT1602 features "no runt" pulses and "no glitch" output during startup or resume as shown in the waveform captures in Figure 17 and Figure 18. 52 standard frequencies between 3.75 MHz and 77.76 MHz (Refer to the frequency list on page 12) Three frequency stability options, 20 ppm, 25 ppm, 50 ppm Two operating temperatures, -20 to 70C or -40 to 85C Six supply voltage options, 1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V, 2.25 to 3.65 V, and 1.62 to 3.63 V continuous Output drive strength OE, ST or NC mode For more information regarding SiTime's field programmable solutions, see Time Machine II and Field Programmable Oscillators. SiT1602 is typically factory-programmed per customer ordering codes for volume delivery. Rev 1.07 Page 9 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Dimensions and Patterns Package Size - Dimensions (Unit: mm)[10] Recommended Land Pattern (Unit: mm)[11] 2.0 x 1.6 x 0.75 mm 0.8 1.2 1.5 0.9 2.5 x 2.0 x 0.75 mm 1.0 1.5 1.9 1.1 Rev 1.07 Page 10 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Dimensions and Patterns (continued) Package Size - Dimensions (Unit: mm)[10] Recommended Land Pattern (Unit: mm)[11] 3.2 x 2.5 x 0.75 mm 1.2 1.9 2.2 1.4 5.0 x 3.2 x 0.75 mm 1.6 2.2 2.54 1.5 Rev 1.07 Page 11 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Dimensions and Patterns (continued) Package Size - Dimensions (Unit: mm)[10] Recommended Land Pattern (Unit: mm)[11] 7.0 x 5.0 x 0.90 mm 2.0 3.81 5.08 2.2 Notes: 10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 11. A capacitor of value 0.1 F or higher between Vdd and GND is required. Rev 1.07 Page 12 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT1602BC-12-18E-66.666660D Packaging "D": 8 mm Tape & Reel, 3 ku reel "T": 12/16 mm Tape & Reel, 3 ku reel "Y": 12/16 mm Tape & Reel, 1 ku reel "E": 8 mm Tape & Reel, 1 ku reel Blank for Bulk Part Family "SiT1602" Revision Letter "B" is the revision Frequency Refer to frequency list below Temperature Range "C" Commercial, -20 to 70C "I" Industrial, -40 to 85C Feature Pin "E" for Output Enable "S" for Standby "N" for No Connect Output Drive Strength "-" Default (datasheet limits) See Tables 7 to 11 for rise/fall times "L" "A" "R" "B" Supply Voltage "18" for 1.8 V 10% "25" for 2.5 V 10% "28" for 2.8 V 10% "30" for 3.0 V 10% "33" for 3.3 V 10% "XX" for 2.25 V to 3.63 V "YY" for 1.62 V to 3.63 V "T" "E" "U" "F" Package Size "7" "1" "2" "3" "8" 2.0 x 1.6 mm 2.5 x 2.0 mm 3.2 x 2.5 mm 5.0 x 3.2 mm 7.0 x 5.0 mm Frequency Stability "1" for 20 ppm "2" for 25 ppm "3" for 50 ppm Table 13. List of Supported Frequencies 3.57 MHz 4 MHz 4.096 MHz 6 MHz 7.3728 MHz 8.192 MHz 10 MHz 12 MHz 14 MHz 18.432 MHz 19.2 MHz 20 MHz 24 MHz 24.576 MHz 25 MHz 25.000625 MHz 26 MHz 27 MHz 28.6363 MHz 30 MHz 31.25 MHz 32.768 MHz 33 MHz 33.3 MHz 33.33 MHz 33.333 MHz 33.3333 MHz 33.33333 MHz 35.84 MHz 37.5 MHz 38 MHz 38.4 MHz 40 MHz 40.5 MHz 48 MHz 50 MHz 65 MHz 66 MHz 66.6 MHz 66.66 MHz 66.666 MHz 66.6666 MHz 74.25 MHz 75 MHz 77.76 MHz 54 MHz 60 MHz 62.5 MHz 66.66666 MHz 72 MHz 74.175824 MHz 74.176 MHz Table 14. Ordering Codes for Supported Tape & Reel Packing Method Device Size (mm x mm) 16 mm T&R (3 ku) 16 mm T&R (1 ku) 12 mm T&R (3 ku) 12 mm T&R (1 ku) 8 mm T&R (3 ku) 8 mm T&R (1 ku) 2.0 x 1.6 - - - - D E 2.5 x 2.0 - - - - D E 3.2 x 2.5 - - - - D E 5.0 x 3.2 - - T Y - - 7.0 x 5.0 T Y - - - - Rev 1.07 Page 13 of 18 www.sitime.com SiT1602B Low Power, Standard Frequency Oscillator Table 15. Additional Information Document Description Download Link Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer Field Programmable Oscillators Devices that can be programmable in the field by Time Machine II http://www.sitime.com/products/field-programmable-oscillators Manufacturing Notes Tape & Reel dimension, reflow profile and other manufacturing related info https://www.sitime.com/sites/default/files/gated/Manufacturing-Notesfor-SiTime-Products.pdf Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes Table 16. Revision History Revision Release Date 0.9 1-Apr-2014 Change Summary 1.0 14-May-2014 1.01 7-May-2015 1.02 18-Jun-2015 Added 16 mm T&R information to Table 14 Revised 12 mm T&R information to Table 14 1.03 30-Aug-2016 Revised part number example in the ordering information 1.04 9-Jan-2018 Updated logo and company address, other page layout changes Revised 2520 package land pattern 1.05 8-Jul-2020 Updated ordering information with "YY" supply voltage option Updated ordering information with note 1.06 27-Jan-2021 Removed Note 12 Added Rise/Fall Time, RMS Period Jitter, and RMS Phase Jitter specifications for "YY" supply voltage Various formatting changes 1.07 10-Mar-2021 Updated Dimensions and Patterns drawings Updated hyperlinks, trademarks and changed rev table date format Preliminary Removed preliminary Updated max spec for current consumption and OE disable current Updated the maximum operating junction temperature Updated the current consumption and OE disable current in Table 12 Updated performance plots 8 and 10 Revised the formula for calculating the max frequency with different rise/fall time options Added 20 MHz to the frequency selection Revised the Electrical Characteristics, Timing Diagrams and Performance Plots Revised 2016 PKG diagram SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 (c) SiTime Corporation 2014-2021. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev 1.07 Page 14 of 18 www.sitime.com Silicon MEMS Outperforms Quartz Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. Rev 1.07 Page 15 of 18 www.sitime.com Silicon MEMS Outperforms Quartz Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: Why is SiTime MEMS Best in Class: SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability World-class MEMS and CMOS design expertise Internal differential architecture for best common mode noise rejection Electrostatically driven MEMS resonator is more immune to EMS Reliability (Million Hours) SiTime IDT 1,140 38 KYCA EPSN 28 TXC CW SLAB SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Power Supply Noise Rejection Figure 1. Reliability Comparison[1] SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. Best Aging Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. Why is SiTime Best in Class: Why is SiTime Best in Class: SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability EPSN On-chip regulators and internal differential architecture for common mode noise rejection MEMS resonator is paired with advanced analog CMOS IC SiTime EPSN KYCA Inherently better immunity of electrostatically driven MEMS resonator MEMS vs. Quartz Aging EpiSeal Oscillator SiTimeMEMS Oscillator Quartz QuartzOscillator Oscillator 10 8 Aging ( PPM) 8 6 Figure 4. Power Supply Noise Rejection[4] 4 2 3 3.5 1.5 0 1-Year 10-Year Figure 2. Aging Comparison[2] Rev 1.07 Page 16 of 18 www.sitime.com Silicon MEMS Outperforms Quartz Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz Center-anchored MEMS resonator is the most robust design Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC TXC EP S EPS CW CW KYC A KYCA SLA B SLAB EpiSeal SiTime MEMS 100.0 10.0 1.0 0.1 0.0 10 100 1000 KYCA Vibration Frequency (Hz) EPSN TXC Figure 6. Shock Figure 5. Vibration Robustness[5] CW SLAB SiTime Robustness[6] Figure labels: TXC = TXC Epson = EPSN Connor Winfield = CW Kyocera = KYCA SiLabs = SLAB SiTime = EpiSeal MEMS Rev 1.07 Page 17 of 18 www.sitime.com Silicon MEMS Outperforms Quartz Notes: 1. Data source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): According to IEC EN61000-4.3 (Electromagnetic compatibility standard) Field strength: 3V/m Radiated signal modulation: AM 1 kHz at 80% depth Carrier frequency scan: 80 MHz - 1 GHz in 1% steps Antenna polarization: Vertical DUT position: Center aligned to antenna Devices used in this test: Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone CW Conner Winfield P123-156.25M Quartz, 3rd Overtone KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL NDK NDK NZ2523SB-25.6M Quartz KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz EPSN Epson SG-310SCF-25M0-MB3 Quartz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: MIL-STD-883F Method 2002 Condition A: half sine wave shock pulse, 500-g, 1ms Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3. 7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com. Rev 1.07 Page 18 of 18 www.sitime.com