FDS6680A | FAIRCHILD dune 1998 a SEMICONDLICTOR FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET GeneralDescription Features This N-Channel Logic Level MOSFET is produced # 12.5 A, 30 V. Rosow = 0.0095 Q @ V..=10V using Fairchild Semiconductor's advanced PowerTrench Rosiom = 0.0132 @ Vy, = 4.5 V. process that has been especially tailored ta minimize the .F et on-state resistance and yet maintain superior switching ast switching speed. performance. Low gate charge. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast " High performance trench technology for switching are required. extremely low Rosony: = High power and current handling capability. Absolute Maximum Ratings 1, = 25C unless other wise noted Symbol | Parameter FDS6680A Units Voss Drain-Source Voltage 30 Voss Gate-Source Voltage +20 I, Drain Current - Continuous (Note 1a) 12.5 - Pulsed 50 P, Power Dissipation for Singie Operation _ (Nate 1a) 2.5 Ww (Note 1b) 12 (Note 1c) 1 TT ste Operating and Storage Temperature Range -55 to 150 C THERMAL CHARACTERISTICS Raa Thermal Resistance, Junction-to-Ambient (Note 1a) 50 C Rac Thermal Resistance, Junction-to-Case (note) 25 C/W 2. 32 FDS6680A Rev.D Electrical Characteristics (T, = 25 C unless otherwise noted ) Symbol _ | Parameter | Conditions | Min | typ | Max | Units OFF CHARACTERISTICS BV nc5 Drain-Source Breakdown Vuitage Vog = OV, |= 250 pA 30 V ABV pg/AT, | Breakdown Voltage Temp. Coefficient |,= 250 LWA, Referenced to 25 C 3 mv /C logs Zero Gate Voltage Drain Current Vog =24V, Vgg= OV 1 pA T, =56C 10 pA lesser Gate - Body Leakage, Forward Vog= 20V, Vog= OV 100 nA legen Gate - Body Leakage, Reverse Veg = 20 V, Vog= OV -100 nA ON CHARACTERISTICS (note 2) Voge JAT, Gate Threshold Voltage Temp. Coefficient lhe 250 LA, Referenced to 25 C 45 mV C Vestry Gate Threshold Voltage Vos = Veg: 'p = 250 HA 1 1.6 3 V =tsc | og | 1a | 24 Posiory Static Drain-Source On-Resistance Veg = 10V, 1,=12.5A 0.008 | 0.0095 Q _[t, =128 0.012 | ao16 Veg = 4.5 V, 1, = 105A 0.0105 | 0.013 lovony On-State Drain Current Vag = 10 V, Vp5=5V 25 A Ors Forward Transconductance Vos = 15V, 1,= 125A [3 $ DYNAMIC CHARACTERISTICS C., Input Capacitance Vog = 15 V, Veg = OV, 2180 pF C.. Output Capacitance f= 1.0MHz 500 oF C., Reverse Transfer Capacitance 255 pF SWITCHING CHARACTERISTICS | ;noe2) toon | Tum - On Detay Time Voz 10V, Let A 13 | 2 | os t TTum-On Rise Time Veg = 10V, Rog, =62 14 26 ns toon Tum - Off Delay Time 43 70 ns ia Tum - Off Fall Time 15 27 ns Q, Total Gate Charge Vog = 15 V, 1)=12.5A, 23 33 nc Q,, Gate-Source Charge Vag= 5 V 7 nc Q,, _ | Gate-Drain Charge 1 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 21 A Vsp Drain-Source Diode Forward Voltage |W gg= OV, [p= 21 A m2 o72 | 12 | Vv Notes: 1. Ry, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,,,is guaranteed by design while R,,, is determined by the user's board design. a Q Qa ~~. a. 50CW on a 0.5 in? o Feb. 108C W on a 0.02 in? RE DO .125C Won a 0.003 in pad pad of 20z copper. =O pad of 20z copper, om = of 20z copper. So G - Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. FOS6680A Rev.D 2-33 vosgssad FDS6680A Typical! Electrical Characteristics 50 toy IF - z | Meg = 10V dw / 5 ov. 4.0V | y 40 5 ~ 3.5V ~ c 5 I i 30 /}-- J nn z | fi 9 20 3.0V. ZL < a S10 - an 2 25v+ eo 0 05 1 16 2 Vpg. DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. w o Zz z? a 6 zo z 3 g" 6 3 g z cs oc a Ty , JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 50 - ~ rT _ Vos =5.0V Ty = =z 40 TT 5 | Ww # so) c So fT 2 20! Zz 20 |/- c | oO Ff 2 Vgg GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Rosny, NORMALIZED DRAIN-SOURCE ON-RESISTANCE Rosi(On) , ON-RESISTANCE (OHM) Ig, REVERSE DRAIN CURRENT (A) 0 10 20 30 40 50 ip . DRAIN CURRENT (A} Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Vag . GATE TO SOURCE VOLTAGE (V) Figure 4. On Resistance Variation with Gate-to-Source Voltage. 40 10 04 I 2 2 2 & = 0.0001 ~ . G 02 04 0.6 08 1 12 Vgp BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2-34 FDS6680A Rev.D Typical Electrical And Thermal Characteristics voss9sds 10 Ts 4000 = |tp =125A oan a 2000 < 15V c 3 & > w 6 _- wy 1000 QO ! Zz c < 8 5 Bg = 400 < 5 oO : 3 2 r 200 [ f = 1 MHz af Vas =0V | 0 -o i ot td 400 ) 0 10 20 30 40 50 60 0.1 0.2 0.5 1 2 5 10 30 Qg. GATE CHARGE (nC) Vpg DRAIN TO SOURCE VOLTAGE (V) Figure 7% Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 a 30 SINGLE PULSE | _ 40} + Resa =125C/W = 10 ! \ = 25C ~ = & 3 = | & = F t I = 5 | | I oO 2 \ Zz 9 4. 4 =z oa = Vgg =10V iy, x i @ 0.1: SINGLE PULSE | ui ~ E Fgsa = 125CAW | T, =25C tt [| h05 on - 05 1 2 5 10 30 80 ' 10 100 300 , : SINGLE PULSE TIME (SEC) Vpg, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. w 2 os <= Wie 22 o2 ert * 538 Resa (=D * Ro gua pe 0. Raua = 125C x 2 Wt TE ~ ee as i | NW P(pk) | aE 002 | ! Z5 oot : th ~ gz wet ow Single 2 2g 0.005 Ty-T, =P *R galt) oe A % re : " = 0.002 Duty Cycle, D = t, A, 0.001 ae a 0.0001 0.001 0.01 o1 1 10 100 300 t, , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending an the circuit board design. 9-35 FDS6680A Rev.D