Features
• With TO-247 package
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 450 V
VCBO Collector-Base Voltage 600 V
VEBO Emitter-Base Voltage 7.0 V
IC Collector Current 7.0 A
PC Collector power dissipation 80 W
TJ Junction Temperature 150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCBO Collector-base breakdown voltage
(IC=1mAdc; IE=0) 600 --- Vdc
V(SUS)CEO Collector-Emitter Breakdown Voltage
(IC=20mAdc, IB=0) 450 --- Vdc
VEBO Emitter-base breakdown voltages
(IC=1mA; IB=0) 7.0 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=600Vdc,IE=0) --- 0.1 mAdc
IEBO Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0) --- 0.1 mAdc
ICEO Collector-emitter Cutoff Current
(VCE=450V; IB=0) --- 0.1 mAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=4.0Adc, VCE=5.0Vdc) 10 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=4.0Adc, IB=0.8Adc) --- 1.0 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=4.0Adc,IB=0.8Adc) --- 1.5 Vdc
TO-247
PIN 1. BASE
PIN 2. COLLECTOR
PIN 3. EMITTER
omponents
20736 Marilla Street Chatsworth
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MCC 2SC4057
NPN Silicon
Power Transistors
Revision: 2 2006/05/16
DIMENSIONS
INCHES MM
DIM
MIN MAX
MIN MAX
NOTE
A --- .866 --- 22.00
B --- .669 --- 17.00
C .185 .209 4.70
5.30
D .039 .055 1.00
1.40
E .067 .091 1.70
2.30
F --- .098 --- 2.50
G .207 .222 5.25
5.65
H .106 .130 2.70
3.30
J .018 .033 0.45
0.85
K .748 --- 19.00
---
L .583 .598 14.80
15.20
M .067 .106 1.70
2.70
P --- .177 --- 4.50
Q .122 .138 3.10
3.50
R .197 .236 5.00
6.00
U .461 .500 11.70
12.70
V --- .138 --- 3.50
H
A
K
B
E
C
R
J
P
U
L
1 2
3
Q
G
V
D
F
M
TM
Micro Commercial Components
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
MCC
Revision: 2 2006/05/16
TM
Micro Commercial Components
www.mccsemi.com
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products are represented on our website, harmless against all damages.
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. reserves the right to make changes without further notice to any
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