BAS70-06S
Jul-06-20011
Silicon Schottky Diode Array
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
VPS05604
6
3
1
54
2
EHA07288
654
321
A1/A2 C2 C1
A1/A2C2C1
Di1
Di2
Type Marking Pin Configuration Package
BAS70-06S 76s 1=C1 2=C2 3=A1/A2 4=C1 5=C2 6=A1/A2 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR70 V
Forward current IF70 mA
Surge forward current (t
10ms) IFSM 100
Total power dissipation, TS
72 °C Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 150
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
310 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAS70-06S
Jul-06-20012
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
min. max.typ.
DC characteristics
Breakdown voltage
I(BR) = 10 µA V(BR) 70 V--
IR
-
-
-
-
0.1
10
Reverse current
VR = 50 V
VR = 70 V
µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
VF
300
600
750
375
705
880
410
750
1000
mV
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz CT- 1.6 2 pF
Charge carrier life time
IF = 25 mA
- - 100 ps
Differential forward resistance
IF = 10 mA, f = 100 MHz RF- 30 -
BAS70-06S
Jul-06-20013
Forward current IF = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
mA
100
I
F
Permissible Pulse Load RthJS = f(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BAS70-06S
Jul-06-20014
Forward current IF = f (VF)
TA = Parameter
0.0
EHB00042BAS 70W/BAS 170W
Ι
V
F
F
10
-1
-2
10
0
10
1
10
2
10
mA
0.5 1.0 V 1.5
T
A
= -40 C
25 C
85 C
150 C
Reverse current IR = f (VR)
TA = Parameter
0
EHB00043
Ι
V
R
R
10
-1
-3
10
0
10
1
10
2
10
A
10
-2
20 40 60 V 80
T
A
= 150 C
85 C
25 C
µ
BAS 70W/BAS 170W
Differential forward resistance rf = f (IF)
f = 10 kHz
0.1
10
EHB00045
r
Ι
f
1
10 mA
100
F
0
1
10
2
10
3
10
Ω
BAS 70W/BAS 170W
Diode capacitance CT = f (VR)
f = 1MHz
0
0.0
EHB00044
C
V
R
T
20 40 60 V 80
0.5
1.0
1.5
pF
2.0
BAS 70W/BAS 170W
