BAS70-06S Silicon Schottky Diode Array 4 General-purpose diode for high-speed switching 5 6 Circuit protection Voltage clamping High-level detecting and mixing 2 A1/A2 C2 C1 6 5 4 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAS70-06S 76s Pin Configuration Package 1=C1 2=C2 3=A1/A2 4=C1 5=C2 6=A1/A2 SOT363 Maximum Ratings Parameter Symbol Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current (t 10ms) IFSM 100 Total power dissipation, TS 72 C Ptot 250 mW Junction temperature Tj 150 C Operating temperature range Top -55 ... 150 Storage temperature Tstg -55 ... 150 Value Unit Thermal Resistance Junction - soldering point1) RthJS 310 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-06-2001 BAS70-06S Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 70 - - DC characteristics Breakdown voltage V(BR) V I(BR) = 10 A Reverse current A IR VR = 50 V - - 0.1 VR = 70 V - - 10 Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA 600 705 750 IF = 15 mA 750 880 1000 CT - 1.6 2 pF - - 100 ps RF - 30 - AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 100 MHz 2 Jul-06-2001 BAS70-06S Forward current IF = f (TS ) 100 IF mA 60 40 20 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f(tp ) IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC RthJS K/W 10 2 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 - 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Jul-06-2001 BAS70-06S Forward current IF = f (VF ) Reverse current IR = f (VR) TA = Parameter TA = Parameter 10 2 F BAS 70W/BAS 170W EHB00042 10 2 mA 10 R BAS 70W/BAS 170W EHB00043 A TA = 150 C 10 1 1 85 C 10 0 10 0 TA = -40 C 25 C 85 C 150 C 10 -1 10 -1 25 C 10 -2 10 -2 0.0 0.5 1.0 V 10 -3 1.5 0 20 40 60 V 80 VR VF Diode capacitance CT = f (VR) Differential forward resistance rf = f (IF) f = 1MHz f = 10 kHz 2.0 CT BAS 70W/BAS 170W EHB00044 10 3 pF rf BAS 70W/BAS 170W EHB00045 1.5 10 2 1.0 10 1 0.5 0.0 0 20 40 60 V 10 0 0.1 80 1 10 mA 100 F VR 4 Jul-06-2001