Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 7 1Publication Order Number:
BZX84C2V4LT1/D
BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
•Pb−Free Packages are Available
•225 mW Rating on FR−4 or FR−5 Board
•Zener Breakdown Voltage Range − 2.4 V to 75 V
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•ESD Rating of Class 3 (>16 KV) per Human Body Model
•Tight Tolerance Series Available (See Page 4)
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Total Power Dissipation on FR−5 Board,
(Note 1) @ TA = 25°CPD225 mW
(Note
1)
@
TA
=
25 C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient RJA
225
1.8
556
mW
mW/°C
°C/W
Total Power Dissipation on Alumina
Substrate, (Note 2) @ TA = 25°CPD300 mW
Substrate
,
(Note
2)
@
TA
=
25 C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient RJA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage
Temperature Range TJ, Tstg −65 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
Device* Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
3
Cathode 1
Anode
BZX84CxxxLT1 SOT−23 3000/Tape & Reel
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
xxx = Specific Device Code
M = Date Code
xxxM
*The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
BZX84CxxxLT3 SOT−23 10,000/Tape & Reel
3
12
BZX84BxxxLT1 SOT−23 3000/Tape & Reel
BZX84BxxxLT3 SOT−23 10,000/Tape & Reel
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BZX84CxxxLT1G SOT−23
(Pb−Free) 3000/Tape & Reel
BZX84BxxxLT1G SOT−23
(Pb−Free) 3000/Tape & Reel
BZX84B4V7LT1, BZX84C2V4LT1 Series
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2
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
VZMaximum Temperature Coefficient of VZ
CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
BZX84B4V7LT1, BZX84C2V4LT1 Series
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ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in
bold, italic
are ON Semiconductor Preferred devices.)
VZ1 (Volts)
@I
ZT1 =5mA
(Note 3) ZZT1
()
VZ2 (V)
@I
ZT2 =1mA
(Note 3) ZZT2
()
VZ3 (V)
@I
ZT3 =20mA
(Note 3) ZZT3
()
Max Reverse
Leakage
Current
VZ
(mV/k)
@ IZT1 = 5 mA
C (pF)
Device Device
Marking Min Nom Max
()
@ IZT1 =
5 mA Min Max
()
@ IZT2 =
1 mA Min Max
()
@ IZT3 =
20 mA VR
Volts
IR
A@Min Max
C (pF)
@ VR = 0
f = 1 MHz
BZX84C2V4LT1, G* Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450
BZX84C2V7LT1, G* Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450
BZX84C3V0LT1 Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450
BZX84C3V3LT1, G* Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450
BZX84C3V6LT1, G* Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450
BZX84C3V9LT1, G* Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450
BZX84C4V3LT1, G* W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450
BZX84C4V7LT1 Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260
BZX84C5V1LT1 Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225
BZX84C5V6LT1 Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200
BZX84C6V2LT1 Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185
BZX84C6V8LT1 Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155
BZX84C7V5LT1 Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140
BZX84C8V2LT1 Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135
BZX84C9V1LT1 Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130
BZX84C10LT1, G* Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130
BZX84C11LT1, G* Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130
BZX84C12LT1 Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130
BZX84C13LT1, G* Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120
BZX84C15LT1 Y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110
BZX84C16LT1, G* Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105
BZX84C18LT1 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100
BZX84C20LT1 Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85
BZX84C22LT1 Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85
BZX84C24LT1 Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80
VZ1 Below
@I
ZT1 =2mA ZZT1
Below
VZ2 Below
@I
ZT2 = 0.1 m
AZZT2
Below
VZ3 Below
@I
ZT3 =10mA ZZT3
Below
Max Reverse
Leakage
Current
VZ
(mV/k) Below
@ IZT1 = 2 mA
C (pF)
Device Device
Marking Min Nom Max
Below
@ IZT1 =
2 mA Min Max
Below
@ IZT4 =
0.5 mA Min Max
Below
@ IZT3 =
10 mA VR
(V)
IR
A@Min Max
C (pF)
@ VR = 0
f = 1 MHz
BZX84C27LT1, G* Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70
BZX84C30LT1 Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70
BZX84C33LT1 Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70
BZX84C36LT1 Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70
BZX84C39LT1, G* Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45
BZX84C43LT1, G* Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40
BZX84C47LT1 Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40
BZX84C51LT1 Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40
BZX84C56LT1 Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40
BZX84C62LT1 Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35
BZX84C68LT1 Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35
BZX84C75LT1, G* Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*The “G” suffix indicates Pb−Free package available.
BZX84B4V7LT1, BZX84C2V4LT1 Series
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ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
VZ(Volts) @ IZT =5mA
ZZT () @
IZT =5mA
Max Reverse
Leakage
Current
VZ
(mV/k)
VZ (Volts) @ IZT = 5 mA
(Note 4) IZT = 5 mA
(Note 4) IR
@
VR(mV/k)
@ IZT = 5 mA C (pF)
Device Device
Marking Min Nom Max Max A@Volts Min Max @ VR =0,
f = 1 MHz
BZX84B4V7LT1 T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260
BZX84B5V1LT1 T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225
BZX84B5V6LT1 T12 5.49 5.6 5.71 40 1 2 −2 2.5 200
BZX84B6V2LT1, G* T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185
BZX84B6V8LT1, G* T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155
BZX84B7V5LT1 T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140
BZX84B8V2LT1, G* T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135
BZX84B9V1LT1, G* T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130
BZX84B16LT1 T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105
BZX84B18LT1 T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100
4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*The “G” suffix indicates Pb−Free package available.
BZX84B4V7LT1, BZX84C2V4LT1 Series
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TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
100
VZ, NOMINAL ZENER VOLTAGE
Figure 3. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 4. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
BZX84B4V7LT1, BZX84C2V4LT1 Series
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TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25°C
IR, LEAKAGE CURRENT ( A)µ
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25 °C
−55 °C
IZ, ZENER CURRENT (mA)
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V) Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
BZX84B4V7LT1, BZX84C2V4LT1 Series
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7
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−09
ISSUE AH
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0385 0.0498 0.99 1.26
D0.0140 0.0200 0.36 0.50
G0.0670 0.0826 1.70 2.10
H0.0040 0.0098 0.10 0.25
J0.0034 0.0070 0.085 0.177
K0.0180 0.0236 0.45 0.60
L0.0350 0.0401 0.89 1.02
S0.0830 0.0984 2.10 2.50
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
1
3
2
AL
BS
VG
DH
C
KJ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
BZX84B4V7LT1, BZX84C2V4LT1 Series
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BZX84C2V4LT1/D
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