MAC97A6,116 - WEEN SEMICONDUCTOR(HONG KONG)CO.,LIMITED

MAC97A6

4Q Triac

15 September 2018 Product data sheet

1. General description

Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended to

be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger

circuits.

2. Features and benefits

•Direct interfacing to logic level ICs

•Direct interfacing to low power gate drivers and microcontrollers

•High blocking voltage capability

•Planar passivated for voltage ruggedness and reliability

•Triggering in all four quadrants

•Very sensitive gate

3. Applications

•General purpose low power phase control

•General purpose low power switching

•Solid-state relay

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 400 V

IT(RMS) RMS on-state current full sine wave; Tlead ≤ 50 °C; Fig. 1;

Fig. 2; Fig. 3

- - 0.6 A

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- - 8 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

- - 8.8 A

Tjjunction temperature - - 125 °C

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 1 5 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 2 5 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 2 5 mA

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 2 / 12

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 4 7 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1 10 mA

VTon-state voltage IT = 0.85 A; Tj = 25 °C; Fig. 10 - 1.4 1.9 V

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 268 V; Tj = 110 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit; Fig. 12

30 45 - V/µs

dVcom/dt rate of change of

commutating voltage

VD = 400 V; Tj = 50 °C; dIcom/dt = 0.3 A/

ms; IT = 0.84 A; gate open circuit

- 5 - V/µs

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T2 main terminal 2

2 G gate

3 T1 main terminal 1

123

TO-92 (SOT54)

sym051

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

MAC97A6 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 3 / 12

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state

voltage

- 400 V

IT(RMS) RMS on-state current full sine wave; Tlead ≤ 50 °C; Fig. 1; Fig. 2;

Fig. 3

- 0.6 A

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

Fig. 4; Fig. 5

- 8 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 8.8 A

I2t I2t for fusing tp = 10 ms; SIN - 0.32 A²s

IG = 20 mA; T2+ G+ - 50 A/µs

IG = 20 mA; T2+ G- - 50 A/µs

IG = 20 mA; T2- G- - 50 A/µs

dIT/dt rate of rise of on-state

current

IG = 20 mA; T2- G+ -10 A/µs

IGM peak gate current - 1 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.1 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

tsurge (S)

10-3 10110-2

003aaa041

IT(RMS)

(A)

Fig. 1. RMS on-state current as a function of surge

duration; maximum values

aaa-009816

Tlead (°C)

0 15010050

0.4

0.2

0.6

0.8

IT(RMS)

(A)

Fig. 2. RMS on-state current as a function of lead

temperature; maximum values

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 4 / 12

α = 180°

0.4

0.8

1.2

00.2 0.4 0.6 0.8

IT(RMS) (A)

Ptot

30°

60°

90°

120°

003aaa036

(W)

con

duction

(

)

for

120

180

2.816

1.967

1.570

1.329

1.1

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-

state current; maximum values

1 10 102103

ITSM

(A)

003aaa038

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function

of the number of sinusoidal current cycles; maximum

values

003aaa040

102

103

ITSM

(A)

tp (s)

10-5 10-1

10-2

10-4 10-3

ITSM

dlT/dt limit

T2- G+ quadrant

tp ≤ 20 ms

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 5 / 12

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

full cycle; Fig. 6 - - 60 K/WRth(j-lead) thermal resistance

from junction to lead half cycle - - 80 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

printed circuit board mounted: lead

length = 4 mm

- 150 - K/W

003aaa029

tp (s)

10-5 1 1010-1

10-2

10-4 10-3

102

103

Zth(j-a)

(K/W)

Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse width

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 6 / 12

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

- 1 5 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

- 2 5 mA

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

- 2 5 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

- 4 7 mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C

- 1 10 mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

- 5 10 mA

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

- 1 10 mA

ILlatching current

VD = 12 V; IG = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 8

- 2 10 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 1 10 mA

VTon-state voltage IT = 0.85 A; Tj = 25 °C; Fig. 10 - 1.4 1.9 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

- 0.9 1.5 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 110 °C;

Fig. 11

0.1 0.7 - V

IDoff-state current VD = 400 V; Tj = 110 °C - 3 100 µA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 268 V; Tj = 110 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit; Fig. 12

30 45 - V/µs

dVcom/dt rate of change of

commutating voltage

VD = 400 V; Tj = 50 °C; dIcom/dt = 0.3 A/

ms; IT = 0.84 A; gate open circuit

- 5 - V/µs

tgt gate-controlled turn-on

time

ITM = 1 A; VD = 400 V; IG = 25 mA; dIG/

dt = 5 A/µs

- 2 - µs

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 7 / 12

Tj (°C)

-60 14090-10 40

003aaa030

(1)

(2)

(3)

(4)

(1)

(2)

(3)

(4)

IGT

IGT(25°C)

(1) T2- G+

(2) T2- G-

(3) T2+ G-

(4) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj (°C)

-60 14090-10 40

003aaa031

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

Tj (°C)

-60 14090-10 40

003aaa032

1.0

0.5

1.5

2.0

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

0.4

0.8

1.2

1.6

00.8 1.6 2.4

003aaa033

(A)

VT (V)

(1) (3)

(2)

Vo = 1.45 V; Rs = 0.1875 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 8 / 12

Tj (°C)

-60 14090-10 40

003aaa039

0.8

0.4

1.2

1.6

VGT(25°C)

VGT

Fig. 11. Normalized gate trigger voltage as a function of junction temperature

003aaa034

Tj (°C)

0 12510050 7525

102

103

dVD/dt

(V/µs)

Fig. 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 9 / 12

10. Package outline

Fig. 13. Package outline TO-92 (SOT54)

WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 10 / 12

11. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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4Q Triac

Product data sheet 15 September 2018 11 / 12

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WeEn Semiconductors MAC97A6

4Q Triac

Product data sheet 15 September 2018 12 / 12

12. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 5

9. Characteristics.............................................................. 6

10. Package outline.......................................................... 9

11. Legal information..................................................... 10

For more information, please visit: http://www.ween-semi.com

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Date of release: 15 September 2018