©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE2955T
PNP Silicon Transis tor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse test: P W ≤300µs, duty cycle≤2% Pulse
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 70 V
VCEO Collector-Emitter Voltage - 60 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current - 10 A
IB Base Current - 6 A
PC Collector Dissipation (TC=25°C) 75 W
PC Collector Dissipation (Ta=25°C) 0.6 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector- Emitter Breakdown Voltage IC= - 200mA, IB = 0 -60 V
ICEO Collector Cut-off Current VCE = - 30V, IB = 0 -700 µA
ICEX1 Collector Cut-off Current VCE = - 70V, VBE(off) = 1.5V -1 mA
ICEX2 Collector Cut-off Current VCE = - 70V, VBE(off) = 1.5V
@ TC = 150°C -5
mA
IEBO Em itter Cut-off Current VEB = - 5V, IC = 0 -5 mA
hFE * DC Current Gain
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = - 10A 20
5 100
VCE(sat) * Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A -1.1
-8 V
V
VBE (on) * Base- Emitter ON Voltage VCE = - 4 V, IC = - 4A -1.8 V
fT Current Gain Bandwidth Product VCE = - 10V, IC = - 500mA 2 MHz
MJE2955T
General Purpos e and Switching Applications
• DC Current Gain Specified to IC = 10 A
• High Current Gain Bandwidth Product : fT = 2M Hz (Min. )
1.Base 2.Collector 3.Emitter
1TO-220
©2001 Fairchild Semiconductor Corporation
MJE2955T
Rev. A1, February 2001
Typical Characteristic
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000 VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = 10IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
-100
100µs
5ms1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
15
30
45
60
75
90
105
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE2955T
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. G
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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