Data Sheet, Doc. No. 5SYA 1407-04 04-2012 5SNA 1500E330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 1500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Collector-emitter voltage Symbol Conditions VCES VGE = 0 V, Tvj min 25 C max Unit 3300 V DC collector current IC TC = 100 C, Tvj = 150 C 1500 A Peak collector current ICM tp = 1 ms 3000 A Gate-emitter voltage VGES Total power dissipation Ptot DC forward current 20 V TC = 25 C, Tvj = 150 C -20 14700 W 1500 A Peak forward current IFRM tp = 1 ms 3000 A Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 13500 A IGBT short circuit SOA tpsc 10 s Isolation voltage Visol Junction temperature Tvj Junction operating temperature IF VCC = 2500 V, VCEM CHIP VGE 15 V, Tvj 3300 V 150 C 1 min, f = 50 Hz 6000 V 150 C Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg -50 125 C 4 6 Ms Mounting torques 2) 1) 2) Base-heatsink, M6 screws Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm IGBT characteristic values 3) Parameter Symbol Collector (-emitter) breakdown voltage Collector-emitter saturation voltage 4) Collector cut-off current Gate leakage current Gate-emitter threshold voltage Conditions min V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 3300 VCE sat IC = 1500 A, VGE = 15 V ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current 3) 4) td(on) tr td(off) tf Eon Eoff ISC Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level 2 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 VCE = 3300 V, VGE = 0 V VCE = 0 V, VGE = 2.9 V 3.1 3.4 V Tvj = 150 C 3.25 Tvj = 25 C 0.06 1 mA Tvj = 125 C 20 40 mA Tvj = 150 C 100 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 1800 V, IC = 1500 A, RG = 1.5 , CGE = 330 nF, VGE = 15 V, L = 100 nH, inductive load tpsc 10 s, VGE = 15 V, VCC = 2500 V, VCEM CHIP 3300 V V 2.5 IC = 1500 A, VCE = 1800 V, VGE = -15 V ..15 V VCC = 1800 V, IC = 1500 A, RG = 1.0 , CGE = 330 nF, VGE = 15 V, L = 100 nH, inductive load Unit Tvj = 125 C 20 V, Tvj = 125 C VCC = 1800 V, IC = 1500 A, RG = 1.5 , CGE = 330 nF, VGE = 15 V, L = 100 nH, inductive load max Tvj = 25 C IC = 240 mA, VCE = VGE, Tvj = 25 C VCC = 1800 V, IC = 1500 A, RG = 1.0 , CGE = 330 nF, VGE = 15 V, L = 100 nH, inductive load typ V mA -500 500 nA 5 7 V 11.0 C 151 nF 12.6 nF 3.85 nF Tvj =25 C 650 ns Tvj =125 C 590 ns Tvj =150 C 590 ns Tvj =25 C 240 ns Tvj =125 C 270 ns Tvj =150 C 280 ns Tvj =25 C 1600 ns Tvj =125 C 1750 ns Tvj =150 C 1800 ns Tvj =25 C 390 ns Tvj =125 C 440 ns Tvj =150 C 470 ns Tvj =25 C 1600 mJ Tvj =125 C 2150 mJ Tvj =150 C 2350 mJ Tvj =25 C 2100 mJ Tvj =125 C 2800 mJ Tvj =150 C 3000 mJ Tvj =150 C 6400 A Diode characteristic values 5) Parameter Symbol Conditions min Tvj =25 C Forward voltage 6) VF Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) IF = 1500 A VCC = 1800 V, IF = 1500 A, VGE = 15 V, RG = 1.0 , CGE = 330 nF, di/dt = 6 kA/s L = 100 nH, inductive load Erec typ max Unit 2.05 2.5 V 2.6 Tvj =125 C 2.25 Tvj =150 C 2.20 V V Tvj =25 C 1700 A Tvj =125 C 1850 A Tvj =150 C 1900 A Tvj =25 C 950 C Tvj =125 C 1550 C Tvj =150 C 1800 C Tvj =25 C 1050 ns Tvj =125 C 1350 ns Tvj =150 C 1500 ns Tvj =25 C 1150 mJ Tvj =125 C 1900 mJ Tvj =150 C 2250 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance Conditions min max Unit Rth(j-c)IGBT 0.0085 K/W Rth(j-c)DIODE 0.017 K/W 2) case to heatsink Diode thermal resistance case to heatsink Rth(c-s)IGBT IGBT per switch, Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.009 K/W 0.018 K/W 2) Comparative tracking index CTI Module stray inductance L grease = 1W/m x K > 600 8 CE TC =25 C Resistance, terminal-chip 2) typ RCC'+EE' nH 0.055 TC =125 C 0.075 TC =150 C 0.080 m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da Surface creepage distance ds Mass m 7) Package and mechanical properties according to IEC 60747 - 15 3 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 min typ 190 x 140 x 38 according to IEC 60664-1 Term. to base: 23 and EN 50124-1 Term. to term: 19 according to IEC 60664-1 and EN 50124-1 Term. to base: 33 Term. to term: 32 max Unit mm mm mm 1380 g Electrical configuration 9 7 5 8 6 4 3 2 1 Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 3000 3000 VCE = VGE 2500 2500 25 C 2000 125 C IC [A] IC [A] 2000 1500 150 C 1500 1000 1000 500 500 125 C 150 C 25 C VGE = 15 V 0 0 0 1 2 3 4 5 5 6 7 8 VCE [V] Fig. 1 Typical on-state characteristics, chip level Fig. 2 3000 10 11 12 13 Typical transfer characteristics, chip level 3000 19 V 2500 19 V 2500 17 V 17 V 15 V 2000 15 V 2000 13 V 13 V IC [A] IC [A] 9 VGE [V] 1500 11 V 11 V 1000 1500 1000 9V 9V 500 500 Tvj = 25 C Tvj = 150 C 0 0 0 1 2 3 4 5 0 VCE [V] Fig. 3 Typical output characteristics, chip level 5 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 1 2 3 4 VCE [V] Fig. 4 Typical output characteristics, chip level 5 6 7 14 VCC = 1800 V RGon = 1.0 Ohm RGoff = 1.5 Ohm CGE = 330 nF VGE = 15 V L = 100 nH 6 5 VCC = 1800 V IC = 1500 A CGE = 330 nF VGE = 15 V L = 100 nH 13 12 11 Eon 10 Eon, Eoff [J] Eon, Eoff [J] 9 4 Eoff 3 Eon 8 7 6 5 Eoff 4 2 3 2 1 Tvj = 125 C Tvj = 150 C 0 0 0 Fig. 5 T vj = 125 C T vj = 150 C 1 500 1000 1500 IC [A] 2000 2500 0 3000 Typical switching energies per pulse vs collector current Fig. 6 td(on) VCC = 1800 V RGon = 1.0 Ohm RGoff = 1.5 Ohm CGE = 330 nF VGE = 15 V Tvj = 125 C L = 100 nH tr 0.1 td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] tf 4 5 6 7 RG [Ohm] 8 9 10 11 td(off) td(on tr 1 tf 0.1 0.01 0 500 1000 1500 2000 2500 0 3000 Typical switching times vs collector current 6 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 1 2 3 4 5 6 7 RG [Ohm] IC [A] Fig. 7 3 VCC = 1800 V IC = 1500 A VGE = 15 V Tvj = 125 C L = 100 nH CGE = 330 nF td(off) 1 2 Typical switching energies per pulse vs gate resistor 10 10 1 Fig. 8 Typical switching times vs gate resistor 8 9 10 11 20 1000 Cies VCC = 1800 V 15 100 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Coes VGE [V] C [nF] VCC = 2500 V 10 10 5 Cres IC = 1500 A Tvj = 25 C 0 1 0 Fig. 9 5 10 15 20 Vce [V] 25 30 Fig. 10 2.5 VCC 2500 V, Tvj = 150 C VGE = 15 V, RG = 1.5 Ohm, CGE = 330 nF 2.0 ICpulse / IC 1.5 1.0 0.5 chip module 0.0 500 1000 1500 2000 2500 VCE [V] Fig. 11 2 4 6 Qg [C] Typical capacitances vs collector-emitter voltage 0 0 35 Turn-off safe operating area (RBSOA) 7 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 3000 3500 Typical gate charge characteristics 8 10 2500 3000 1000 VCC = 1800 V VGE = 15 V RGon = 1.0 Ohm CGE = 330 nF L = 100 nH 500 1000 Erec 500 Irr VCC = 1800 V IF = 1500 A L = 100 nH CGE = 330 nF 0 0 0 500 1000 1500 2000 2500 0 3000 1 2 3 4 5 6 7 di/dt [kA/s] IF [A] Fig. 12 RG = 1.0 Ohm Qrr Qrr RG = 1.5 Ohm Irr RG = 2.2 Ohm 1500 1500 RG = 3.3 Ohm 2000 RG = 10 Ohm 2000 Erec [mJ], Irr [A], Qrr [C] Erec [mJ], I rr [A], Qrr [C] 2500 RG = 4.7 Ohm Tvj = 125 C Tvj = 150 C Erec RG = 6.8 Ohm Tvj = 125 C Tvj = 150 C Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 3000 VCC 2500 V di/dt 8 kA/s Tvj = 150 C L = 100 nH 3000 2500 2500 2000 IR [A] IF [A] 2000 25 C 1500 125 C 1500 150 C 1000 1000 500 500 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 VF [V] Fig. 14 Typicial diode forward characteristics chip level 8 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 500 1000 1500 2000 2500 3000 3500 VR [V] Fig. 15 Safe operating area diode (SOA) 0.1 Analytical function for transient thermal impedance: n R i (1 - e -t/ i ) Z th (j-c) (t) = Z th(j-c) Diode 0.01 i 1 IGBT Z th(j-c) IGBT i 1 2 3 4 Ri(K/kW) 5.854 1.375 0.641 0.632 i(ms) 207.4 30.1 7.55 1.57 Ri(K/kW) 11.54 2.887 1.229 1.295 i(ms) 203.6 30.1 7.53 1.57 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is exclude. 5SNA 1500E330305 | Doc. No. 5SYA 1407-04 04-2012 DIODE 0.001