© 2006 IXYS All rights reserved DS99337E(03/06)
PolarHVTM HiPerFET
Power MOSFET VDSS = 600 V
ID25 = 40 A
RDS(on) ≤≤
≤≤
≤ 140 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
•International standard package
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
•miniBLOC with Aluminium nitride
isolation
zFast recovery diode
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 600 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 125°C 1000 μA
RDS(on) VGS = 10 V, ID = 4 A 140 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C40A
IDM TC= 25°C, pulse width limited by TJM 110 A
IAR TC= 25°C48A
EAR TC= 25°C70mJ
EAS TC= 25°C 2.0 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 625 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5 / 13 Nm/lb.in.
Terminal connection torque 1.5 / 13 Nm/lb.in.
Weight 30 g
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
IXFN 48N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 48N60P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS = 20 V; ID = 24 A, pulse test 35 53 S
Ciss 8860 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 850 pF
Crss 60 pF
td(on) 30 ns
trVGS = 10 V, VDS = 24 A 25 ns
td(off) RG= 2 Ω (External) 85 ns
tf22 ns
Qg(on) 150 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 24 A 50 nC
Qgd 50 nC
RthJC 0.2 °C/W
RthCS SOT-227B 0.05 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 48 A
ISM Repetitive 110 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = 25A, -di/dt = 100 A/μs 200 ns
QRM VR = 100V 0.8 μC
IRM 6.0 A
SOT-227B (IXFN) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
IXFN 48N60P
Fig. 2. Extended Output Cha racteristics
@ 25
º
C
0
20
40
60
80
100
120
0 4 8 12 16 2 0 2 4
VD S - Volts
I D - Ampe res
V
GS
= 10 V
8V
7V
6V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
5
10
15
20
25
30
35
40
45
50
02468101214
VD S - Volts
I D - Ampe res
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Char acter istics
@ 25
º
C
0
5
10
15
20
25
30
35
40
45
50
0123456
VD S - Volts
I D - Ampe res
V
GS
= 10 V
8V
7V
5V
6V
Fig. 4. RDS(on
)
Normalized to ID
= 24A
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
TJ
- Degrees Centigr ade
R D S ( o n ) - Normali zed
I
D
= 48 A
I
D
= 24A
V
GS
= 10V
Fig. 5. RDS(on) Normalized to
ID = 24A Valu e vs. Drain C urrent
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0 20406080100120140
I D - Amperes
R D S ( o n ) - Normalized
T
J
= 125ºC
T
J
= 25 ºC
V
GS
= 10V
Fig. 6. Drain Curr ent vs. Case
Temperature
0
5
10
15
20
25
30
35
40
45
-50 -25 0 25 50 75 100 125 150
TC - Degr ees Centigrade
I D - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 48N60P
Fig. 11. Capacit ance
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10 . Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- nanoCou lombs
V
G S
- Volts
VDS
= 300V
ID
= 24 A
IG
= 10 m A
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
4 4.5 5 5.5 6 6.5 7
V
G S
- Volts
I
D
- Am peres
TJ = 125ºC
25ºC
-40ºC
Fig. 8. Tr ans conductance
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090
I
D
- Amper es
g
f s
- Sie mens
TJ = -40 ºC
25ºC
125ºC
Fig. 9. Source C urrent v s.
Sour ce-To-Drain V oltage
0
20
40
60
80
100
120
140
160
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
S D
- Volts
I
S
- Am peres
TJ
= 125ºC
TJ
= 25ºC
Fig. 13. Maxim u m T ran sien t T her m al
Resistance
0.00
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Puls e W idth - Sec onds
R ( t h ) J C - ºC / W
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
