Document Number: 88838 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
General Purpose Plastic Rectifier
BY251P thru BY255P
Vishay General Semiconductor
FEATURES
Low forward voltage drop
Low leakage current, IR less than 0.1 μA
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
Note
These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 200 V to 1300 V
IFSM 150 A
IR5.0 μA
VF1.1 V
TJ max. 150 °C
DO-201AD
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1300 V
Maximum RMS voltage VRMS 140 280 420 560 910 V
Maximum DC blocking voltage VDC 200 400 600 800 1300 V
Maximum average forward rectified current
10 mm lead length IF(AV) 3.0 A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load IFSM 150 A
Maximum full load reverse current, full cycle average
10 mm lead length IR(AV) 100 μA
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT
Maximum instantaneous
forward voltage 3.0 A VF1.1 V
Maximum reverse current
at rated DC blocking voltage TA = 25 °C IR5.0 μA
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 V,
Irr = 0.25 A trr 3.0 μs
Typical junction capacitance 4.0 V, 1 MHz CJ40 pF
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88838
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-Nov-09
BY251P thru BY255P
Vishay General Semiconductor
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Fig. 3 - Maximum Non-repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT
Typical thermal resistance
RθJA (1) 20
°C/W
RθJL (1) 10
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BY253P-E3/54 1.1 54 1400 13" diameter paper tape and reel
BY253P-E3/73 1.1 73 1000 Ammo pack packaging
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
Ambient Temperature (°C)
60 Hz Resistive
or Inductive Load
10 mm Lead Length
1 10 100
1000
100
0
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TA = 55 °C
8.3 ms Single Half Sine-Wave
020 40 60 80 100
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
10
100
1
0.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Document Number: 88838 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 04-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
BY251P thru BY255P
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
110 100
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
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Revision: 12-Mar-12 1Document Number: 91000
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