4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
December 2014
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M
6-Pin DIP General Purpose Photodarlington Optocoupler
Features
■
High Sensitivity to Low Input Drive Current
■
Meets or Exceeds All JEDEC Registered
Specifications
■
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
■
DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
■
Low Power Logic Circuits
■
Telecommunications Equipment
■
Portable Electronics
■
Solid State Relays
■
Interfacing Coupling Systems of Different Potentials
and Impedances
Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and
TIL113M have a gallium arsenide infrared emitter opti-
cally coupled to a silicon planar photodarlington.
Schematic
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6BASE
N/C
6
1
6
6
1
1
Figure 1. Schematic
Figure 2. Package Outlines
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 2
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 V
RMS
I–IV
< 300 V
RMS
I–IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
V
PR
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC 1360 V
peak
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC 1594 V
peak
V
IORM
Maximum Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over-Voltage 6000 V
peak
External Creepage
≥
7mm
External Clearance
≥
7mm
External Clearance (for Option TV, 0.4" Lead Spacing)
≥
10 mm
DTI Distance Through Insulation (Insulation Thickness)
≥
0.5 mm
T
S
Case Temperature
(1)
175 °C
I
S,INPUT
Input Current
(1)
350 mA
P
S,OUTPUT
Output Power
(1)
800 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
> 10
9
Ω
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 3
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Value Unit
TOTAL DEVICE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125
°C
T
SOL
Lead Solder Temperature 260 for 10 seconds °C
P
D
Total Device Power Dissipation @ T
A
= 25°C 270 mW
Derate Above 25°C 3.3 mW/°C
EMITTER
I
F
Continuous Forward Current 80 mA
V
R
Reverse Voltage 3 V
I
F
(pk) Forward Current – Peak (300 µs, 2% Duty Cycle) 3.0 A
P
D
LED Power Dissipation @ T
A
= 25°C 120 mW
Derate above 25°C 2.0 mW/°C
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage 30 V
BV
CBO
Collector-Base Breakdown Voltage 30 V
BV
ECO
Emitter-Collector Breakdown Voltage 5 V
P
D
Detector Power Dissipation @ T
A
= 25°C 150 mW
Derate Above 25°C 2.0 mW/°C
I
C
Continuous Collector Current 150 mA
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 4
Electrical Characteristics
T
A
= 25°C Unless otherwise specified.
Individual Component Characteristics
Notes:
2. Indicates JEDEC registered data.
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage
(2)
I
F
= 10 mA
4NXXM 1.2 1.5 V
H11B1M,
TIL113M 0.8 1.2 1.5 V
I
R
Reverse Leakage Current
(2)
V
R
= 3.0 V 4NXXM 0.001 100 µA
V
R
= 6.0 V H11B1M,
TIL113M 0.001 10 µA
C Capacitance
(2)
V
F
= 0V, f = 1.0 MHz All 150 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown
Voltage
(2)
I
C
= 1.0 mA, I
B
= 0
4NXXM,
TIL113M 30 60 V
H11B1M 25 60 V
BV
CBO
Collector-Base Breakdown
Voltage
(2)
I
C
= 100 µA, I
E
= 0 All 30 100 V
BV
ECO
Emitter-Collector Breakdown
Voltage
(2)
I
E
= 100 µA, I
B
= 0
4NXXM 5.0 10 V
H11B1M,
TIL113M 710 V
I
CEO
Collector-Emitter Dark
Current
(2)
V
CE
= 10 V, Base Open All 1 100 nA
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 5
Electrical Characteristics
(Continued)
T
A
= 25°C Unless otherwise specified.
Transfer Characteristics
Notes:
3. Indicates JEDEC registered data.
4. The current transfer ratio(I
C
/ I
F
) is the ratio of the detector collector current to the LED input current.
5. Pulse test: pulse width = 300 µs, duty cycle
≤
2.0% .
6. I
F
adjusted to I
C
= 2.0 mA and I
C
= 0.7 mA rms.
7. The frequency at which I
C
is 3 dB down from the 1 kHz value.
Isolation Characteristics
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
DC CHARACTERISTICS
I
C(CTR)
Collector Output
Current
(3)(4)(5)
I
F
= 10 mA, V
CE
= 10 V,
I
B
= 0
4N32M,
4N33M 50 (500) mA (%)
4N29M,
4N30M 10 (100) mA (%)
I
F
= 1 mA, V
CE
= 5 V H11B1M 5 (500) mA (%)
I
F
= 10 mA, V
CE
= 1 V TIL113M 30 (300) mA (%)
V
CE(SAT)
Saturation Voltage
(3)(5)
I
F
= 8 mA, IC = 2.0 mA 4NXXM 1.0 V
TIL113M 1.25 V
IF = 1 mA, IC = 1 mA H11B1M 1.0 V
AC CHARACTERISTICS
ton Turn-on Time
IF = 200 mA, IC = 50 mA,
VCC = 10 V, RL = 100 Ω
4NXXM,
TIL113M 5.0 µs
IF = 10 mA, VCE = 10 V,
RL = 100 ΩH11B1M 25 µs
toff
Turn-off Time
IF = 200 mA, IC = 50 mA,
VCC = 10 V, RL = 100 Ω
4N32M,
4N33M,
TIL113M
100 µs
4N29M,
4N30M 40 µs
IF = 10 mA, VCE = 10 V,
RL = 100 ΩH11B1M 18 µs
BW Bandwidth(6)(7) 30 kHz
Symbol Characteristic Test Conditions Min. Typ. Max. Unit
VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS
CISO Isolation Capacitance VI-O = 0 V, f = 1 MHz 0.2 pF
RISO Isolation Resistance VI-O = ±500 VDC, TA = 25°C 1011 Ω
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 6
Typical Performance Curves
Figure 4. Normalized CTR vs. Forward Current
IF - FORWARD CURRENT (mA)
0 2 4 6 8 10 12 14 16 18 20
NORMALIZED CTR
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VCE = 5.0 V
TA = 25°C
Normalized to
IF = 10 mA
Figure 5. Normalized CTR vs. Ambient Temperature
TA - AMBIENT TEMPERATURE (°C)
-60 -40 -20 0 20 40 60 80 100
NORMALIZED CTR
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 5 mA
IF = 10 mA
IF = 20 mA
Normalized to
IF = 10 mA
TA = 25°C
IF - LED FORWARD CURRENT (mA)
VF - FORWARD VOLTAGE (V)
Figure 3. LED Forward Voltage vs. Forward Current
1 10 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = 25°C
TA = -55°C
TA = 100°C
Figure 7. CTR vs. RBE (Saturated)
RBE- BASE RESISTANCE (k Ω)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF = 20 mA
IF = 10 mA
IF = 5 mA
VCE= 0.3 V
Figure 6.
CTR vs. RBE (Unsaturated)
RBE- BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE= 5.0 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
I
F
= 5 mA
I
F
= 20 mA
I
F
= 10 mA
Figure 8. Collector-Emitter Saturation Voltage
vs. Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
F
= 2.5 mA
T
A
= 25
˚C
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 7
Typical Performance Curves (Continued)
Switching Time Test Circuit and Waveform
Figure 13. Switching Time Test Circuit and Waveform
NORMALIZED ton - (ton(R
BE
) / ton(open))
Figure 10. Normalized ton vs. RBE
RBE- BASE RESISTANCE (kΩ)
10 100 1000 10000 100000
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC = 10 V
IC = 2 mA
RL = 100 Ω
SWITCHING SPEED (μs)
Figure 9. Switching Speed vs. Load Resistor
R-LOAD RESISTOR (kΩ)
0.1 1 10 100
0.1
1
10
100
1000
Toff
IF = 10 mA
VCC = 10 V
TA = 25°C
Tr
Ton
Tf
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
VCC = 10 V
IC = 2 mA
RL = 100 Ω
NORMALIZED toff - (toff(R
BE
) / toff(open))
10 100 1000 10000 100000
RBE- BASE RESISTANCE (kΩ)
Figure 11. Normalized toff vs. RBE Figure 12. Dark Current vs. Ambient Temperature
TA - AMBIENT TEMPERATURE
(°C)
0 20 40 60 80 100
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
0.001
0.01
0.1
1
10
100
1000
10000
V
CE
= 10 V
T
A
= 25°
C
OUTPUT PULSE
INPUT PULSE
trtf
INPUT
IF RL
RBE
VCC = 10 V
OUTPUT
ton
10%
90%
toff
IC
Adjust IF to produce IC = 2 mA
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 8
Reflow Profile
Figure 14. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
> 245°C = 42 s
Time above
183°C = 90 s
360
1.822°C/s Ramp-up rate
33 s
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.4 9
Ordering Information
Note:
8. The product orderable part number system listed in this table also applies to the 4N30M, 4N32M, 4N33M, H11B1M,
and TIL113M devices.
Marking Information
Figure 15. Top Mark
Table 1. Top Mark Definitions
Part Number Package Packing Method
4N29M DIP 6-Pin Tube (50 Units)
4N29SM SMT 6-Pin (Lead Bend) Tube (50 Units)
4N29SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units)
4N29VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units)
4N29SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units)
4N29SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units)
4N29TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units)
1 Fairchild Logo
2 Device Number
3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option)
4 One-Digit Year Code, e.g., “4”
5 Digit Work Week, Ranging from “01” to “53”
6 Assembly Package Code
4N29
V X YY Q
1
2
6
43 5
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Rev. I77
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