CREAT BY ART
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
V
RRM
35 45 50 60 90 100 150 V
V
RMS
24 31 35 42 63 70 105 V
V
DC
35 45 50 60 90 100 150 V
I
F(AV)
A
I
RRM
A
0.95
0.92
1.02
0.98
0.1
5
dV/dt V/us
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number：D1308001 Version:J13
7.5
1.0
- 55 to + 150
15 10
0.55 0.65 0.75
0.82 0.90
10000
0.73
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz) I
FRM
25 A
Peak Repetitive Reverse Surge Current (Note 1) 1 0.5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Weight：1.37 gram (approximately)
Case：TO-263AB(D
2
PAK)
FEATURES
MBRS
2560
CT
MBRS
2590
CT
Polarity：As marked
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal：Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T
A
=25℃ unless otherwise noted)
MBRS
2545
CT
MBRS2535CT thru MBRS25150CT
Dual Common Cathode Schottk
y
Rectifier
Taiwan Semiconductor
MECHANICAL DATA
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Moisture sensitivity: level 1, per J-STD-020
TO-263AB(D
2
PAK)
MBRS
2550
CT
MBRS
2535
CT
PARAMETER SYMBOL
MBRS
25100
CT
Note 2：Pulse test with PW=300u sec, 1% duty cycle
Operating junction temperature range
Storage temperature range
mA
Maximum reverse current @ rated VR T
A
=25 ℃
T
A
=125 ℃
Typical thermal resistance
I
R
- 55 to + 150
Note 1： tp = 2.0 μs, 1.0KHz
Voltage Rate of Change (Rated V
R
)
Unit
MBRS
25150
CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V
A
Maximum average forward rectified current 25
Maximum Instantaneous Forward Voltage (Note 2)
IF=12.5A @ 25℃
IF=12.5A @ 125℃
IF=25.0A @ 25℃
IF=25.0A @ 125℃
I
FSM
V
F
200
0.65 0.75 0.85
0.92
0.2 0.2 0.1
0.80 0.88
PART NO.
PART NO.
MBRS2560CT
MBRS2560CT
MBRS2560CT
(TA=25℃ unless otherwise noted)
Document Number：D1308001 Version:J13
MBRS2535CT thru MBRS25150CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING COD E GREEN COMPOUND
CODE
PACKAGE PACKING
MBRS25xxCT
(Note 1) Prefix "H" RN Suffix "G" D
2
PAK 800 / 13" Paper reel
C0 D
2
PAK 50 / Tube
Note 1: "xx" defines voltage from 35V (MBRS2535CT) to 150V (MBRS25150CT)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN
COMPOUND DESCRIPTION
MBRS2560CT RN RN
MBRS2560CT RNG RN G Green compound
MBRS2560CTHRN H RN AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
5
10
15
20
25
30
50 60 70 80 90 100 110 120 130 140 150
AVERAGE FORWARD
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
100
125
150
175
200
225
250
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
8.3ms Single Half Sine-Wave
JEDEC Method
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
INSTANTANEOUS FORWARD
CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD
CHARACTERSTICS PER LEG
MBRS2535CT-MBRS2545CT
MBRS2550CT-MBRS2560CT
TA=25℃
TA=125℃
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
INSTANTANEOUS FORWARD
CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD
CHARACTERSTICS PER LEG
MBRS2590CT-MBRS25100CT
MBRS25150CT
TA=25℃
TA=125℃
Min Max Min Max
A-10.5 - 0.413
B 14.60 15.88 0.575 0.625
C 2.41 2.67 0.095 0.105
D 0.68 0.94 0.027 0.037
E 2.29 2.79 0.090 0.110
F 4.44 4.70 0.175 0.185
G 1.14 1.40 0.045 0.055
H 1.14 1.40 0.045 0.055
I 8.25 9.25 0.325 0.364
J 0.36 0.53 0.014 0.021
K 2.03 2.79 0.080 0.110
Document Number：D1308001 Version:J13
MBRS2535CT thru MBRS25150CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit(mm) Unit(inch)
0.0001
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT. (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TA=25℃
TA=125℃
MBRS2590CT-MBRS25100CT
MBRS25150CT
10
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE A
(pF)
REVERSE VOLTAGE (V)
FIG. 7 TYPICAL JUNCTION CAPACITANCE PER LEG
f=1.0MHz
Vslg=50mVp-p
MBRS2535CT-MBRS2560CT
MBRS2590CT-MBRS25150CT
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL IMPEDANCE A
(℃/W)
T-PULSE DURATION (s)
FIG. 8 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT. (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TA=25℃
TA=125℃
MBRS2535CT-MBRS2545CT
MBRS2550CT-MBRS2560CT
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number：D1308001 Version:J13
B8.3
MARKING DIAGRAM
9.5F
3.5
A
D
16.9E
2.5
1.1
G
SUGG ESTED PAD LAY OUT
MBRS2535CT thru MBRS25150CT
Taiwan Semiconductor
Symbol
C
Unit(mm)
10.8
