1N 4148M SILICON EPITAXIAL PLANAR _ DIODE Silicon Expitaxial Planar Diode fast switching diode. Absolute Maximum Ratings (T, = 25 C) max. 1.99 max _ 75 29 me) Cathode Mark in White Ip 0.420 Glass case JEDEC DO-34 Dimensions in mm Symbol Value Unit Reverse Voltage Ve 50 Vv Peak Reverse Voltage Vem 60 Vv Rectified Current (Average) l 130 9 mA Half Wave Rectification with Resist. Load at T, 4 = 25 C and f 2 50 Hz Surge Forward Current at t < 1s and T, = 25C legna 500 mA Power Dissipation at T,_, = 25 C Past 400 mW Junction Temperature T, 200 C Storage Temperature Range Ts -65 to + 200 C 1 Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Characteristics at T, = 25 C Symbol Min. Typ. Max. Unit Forward Voltage Vv. - - 1.1 V at |. = 100 mA Leakage Current I, - - 0.5 pA at V, = 50V Reverse Breakdown Voltage Vierr 60 - - Vv tested with 100 nA Pulses Capacitance Cy - - 3 pF atV.=V,=0 Reverse Recovery Time 1. - - 4 ns from |= 10 mA to l,= 1 mA, V, = 6 V, R, = 100 Q, 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) 1N 4148M SILICON EPITAXIAL PLANAR DIODE mA 103 107 102 Forward characteristics 1N4148M T;=100 C T= 25C Dynamic forward resistance versus forward current R 1N4148M T= 25C f =1kHz Wi Admissible power dissipation versus ambient temperature Valid provided that electrodes are kept at ambient Relative capacitance versus reverse voltage temperature mw 1N4148M 1N4148M 1000 900 i T= 28C Crop Ve) f =1MHz Prop 800 Crop (OV) 700 1,0 600 N s Pi 500 0,9 [pe [me 400 300 o8 200 100 Ne 07 0 0 100 200C 0 2 4 6 8 10V SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )