BD778 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 

!   



. . . designed for general purpose amplifier and high–speed switching applications.

•High DC Current Gain

hFE = 1400 (Typ) @ IC = 2.0 Adc

•Collector–Emitter Sustaining Voltage — @ 10 mAdc

VCEO(sus) = 45 Vdc (Min) — BD776

VCEO(sus) = 60 Vdc (Min) — BD777, 778

VCEO(sus) = 80 Vdc (Min) — BD780

•Reverse Voltage Protection Diode

•Monolithic Construction with Built–in Base–Emitter output Resistor

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

BD776

ÎÎÎ

BD777

BD778

ÎÎÎÎ

BD780

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current —

Continuous Peak

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

4.0

6.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

100

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

TC = 25

C – Derate above 25

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.12

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristics

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

8.34

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

83.3

ÎÎÎ

C/W

020 40 60 100 120 140 160

Figure 1. Power Derating

T, TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

4.0

8.0

1.6

1.2

0.4

0.8

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD777/D

 Motorola, Inc. 1995









DARLINGTON

4–AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

45, 60, 80 VOLTS

15 WATTS

*Motorola Preferred Device



CASE 77–08

TO–225AA TYPE





REV 7

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) BD776

(IO = 10 mAdc, IB = 0) BD777, BD778

BD780

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0) BD776

(VCE = 30 Vdc, IB = 0) BD777, BD778

(VCE = 40 Vdc, IB = 0) BD780

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = Rated, VCEO(sus), IE = 0)

(VCB = Rated, VCEO(sus), IE = 0, IC = 100°C)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

100

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 2.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎ

HFE

ÎÎÎÎ

750

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc)

ÎÎÎÎ

VCE(Sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc)

ÎÎÎÎ

VBE(Sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 1.5 Adc,VCE = 3 Vdc)

ÎÎÎÎ

VBE(On)

ÎÎÎÎ

—

ÎÎÎÎ

2.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Diode Voltage Drop (IEC = 2.0 Adc)

ÎÎÎÎ

VEC

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain Bandwidth Product (IC = 1.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Turn–On Time (IC = 250 mA/VCE = 2 V) BD775–777

BD776–778–780

ÎÎÎÎ

ton

ÎÎÎÎ

—

ÎÎÎÎ

250

150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Turn–Off Time (IC = 250 mA, VCE = 2 V) BD775–777

BD776–778–780

ÎÎÎÎ

toff

ÎÎÎÎ

—

ÎÎÎÎ

600

400

ÎÎÎ

Figure 2. Active Region Safe Operating Area

1.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

0.5

0.01 2.0 5.0 10 50 100

0.05

0.02

IC, COLLECTOR CURRENT (AMP)

BD775, 776

BD777, 778

BD780

CURVES APPLY BELOW RATED VCEO

TJ = 150

C dc

5.0 ms

1.0 ms 500

100

s3000

Figure 3. Typical DC Current Gain

IC, COLLECTOR CURRENT (AMP)

100 0.2 0.3 0.5 0.7 1.0 2.0 5.0

1500

700

400

200

2000

1000

hFE, DC CURRENT GAIN

TJ = 25

VCE = 2.0 Vdc

1.0

0.1

30 70

500

300

BD776, 778, 780

777

4.0

3.03.0 7.0

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

SECONDARY BREAKDOWN LIMITED

Figure 4. Darlington Circuit Schematic

BASE

PNP

BD776

BD778

BD780

COLLECTOR

EMITTER

[

150

BASE

NPN

BD777

BD779

COLLECTOR

EMITTER

[

150

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

   

4 Motorola Bipolar Power Transistor Device Data

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BD777/D

*BD777/D*

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