e
1
0.
2.
4.
6.
8.
0.0 0.2 0.4 0.6 0.8
Input Power (Watts)
Output Power (Watts)
20
40
60
80
100
Efficiency (%)
VCC = 25 V
ICQ = 25 mA
f = 960 MHz
Typical Output Power and Efficiency vs. Input Pow er
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 55 Vdc
Collector-Base Voltage VCBO 60 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC1.1 Adc
Total Device Dissipation at Tflange = 25°C PD22 Watts
Above 25°C derate by 0.125 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 8.0 °C/W
PTB 20181
6 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20181 is an NPN, common emitter RF power transistor intended
for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Package 20227
20181
LOT CODE
25 Volt, 915–960 MHz Characteristics
- Output Power = 6 Watts
- Gain = 9.0 dB Min at 6 Watts
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
5
/14/98
PTB 20181
2
e
Z Source Z Load
Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 5 mA V(BR)CEO 28 32 — Volts
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 60 70 — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts
DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 50 120 —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 25 Vdc, Pout = 6 W, ICQ = 25 mA, f = 960 MHz) Gpe 910—dB
Collector Efficiency
(VCC = 25 Vdc, Pout = 6 W, ICQ = 25 mA, f = 960 MHz) ηC50 — — %
Load Mismatch Tolerance
(VCC = 25 Vdc, Pout = 6 W, ICQ = 25 mA, Ψ— — 30:1 —
f = 960 MHz—all phase angles at frequency of test)
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 25 Vdc, Pout = 6 W, ICQ = 25 mA)
Frequency Z Source Z Load
MHz R jX R jX
915 2.5 -1.4 6.3 9.8
960 2.6 -0.8 7.0 12.4
PTB 20181
3
e
Gain vs. Frequency
(as measured in a broadband circuit)
6
7
8
9
10
11
12
910 920 930 940 950 960 970
Frequency (MHz)
Gain (dB)
VCC = 2 5 V
ICQ = 25 mA
POUT = 6 W
Output Pow er vs. Supply Voltage
3
4
5
6
7
8
16 18 20 22 24 26 28 30
Supply Voltage (Volts)
Output Power (Watts)
ICQ = 25 mA
PIN = 600 mW
f = 960 MHz
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20181 Uen Rev. C 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
