PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET V(BR)DSS D G Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S RDS(on) max. 8.5m ID (Silicon Limited) 84A ID (Package Limited) 75A D D D G D TO-220AB AUIRF1010EZ G Gate Absolute Maximum Ratings 60V S S D G D2Pak AUIRF1010EZS S D G TO-262 AUIRF1010EZL D Drain S Source Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 84 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current 75 60 c Linear Derating Factor Gate-to-Source Voltage EAS (tested) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR TJ TSTG Single Pulse Avalanche Energy (Thermally Limited) c i d Repetitive Avalanche Energy h A 340 PD @TC = 25C Maximum Power Dissipation VGS EAS Units 140 W 0.90 20 W/C V 99 mJ 180 See Fig.12a,12b,15,16 A mJ -55 to + 175 Operating Junction and C Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw 300 10 lbf*in (1.1N*m) Thermal Resistance RJC Junction-to-Case RCS k Parameter Typ. Max. --- 1.11 Case-to-Sink, Flat, Greased Surface 0.50 --- RJA Junction-to-Ambient --- 62 RJA Junction-to-Ambient (PCB Mount, steady state) --- 40 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com j Units C/W 1 03/23/10 AUIRF1010EZ/S/L Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 60 --- --- 2.0 200 --- --- --- --- --- --- 0.058 --- 6.8 8.5 --- 4.0 --- --- --- 20 --- 250 --- 200 --- -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 51A V VDS = VGS, ID = 250A VDS = 25V, ID = 51A S A VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf LD Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. --- --- --- --- --- --- --- --- Typ. 58 19 21 19 90 38 54 4.5 Max. 86 28 32 --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 2810 420 200 1440 320 510 --- --- --- --- --- --- Units Conditions nC ID = 51A VDS = 48V VGS = 10V ns VDD = 30V ID = 51A RG = 7.95 VGS = 10V nH Between lead, f f 6mm (0.25in.) from package pF D G S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 48V, = 1.0MHz VGS = 0V, VDS = 0V to 48V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 84 ISM (Body Diode) Pulsed Source Current --- --- 340 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.077mH, RG = 25, IAS = 51A, VGS =10V. Part not recommended for use above this value. ISD 51A, di/dt 260A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 --- --- --- --- 41 54 1.3 62 81 Conditions MOSFET symbol A V ns nC showing the integral reverse D G S p-n junction diode. TJ = 25C, IS = 51A, VGS = 0V TJ = 25C, IF = 51A, VDD = 30V di/dt = 100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.077mH, RG = 25, IAS = 51A, VGS =10V. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. www.irf.com AUIRF1010EZ/S/L Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level Machine Model TO-220AB N/A Class M4 AEC-Q101-002 ESD Human Body Model Class H1C AEC-Q101-001 Charged Device Model Class C3 AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF1010EZ/S/L 10000 1000 1000 BOTTOM 100 100 10 1 4.5V 1 10 BOTTOM 10 4.5V 1 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 0.1 0.1 0.1 100 0.01 V DS, Drain-to-Source Voltage (V) 1 10 100 Fig 2. Typical Output Characteristics 1000 100 100 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current () 0.1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 175C 10 T J = 25C 1 90 T J = 25C 80 70 60 50 T J = 175C 40 30 20 10 0 0.1 4 5 6 7 8 9 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 0 20 40 60 80 100 120 140 ID,Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com ance AUIRF1010EZ/S/L 100000 12.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED ID= 51A VGS, Gate-to-Source Voltage (V) C rss = C gd C, Capacitance(pF) C oss = C ds + C gd 10000 Ciss 1000 Coss Crss VDS= 48V VDS= 30V 10.0 VDS= 12V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 0 40 50 60 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100.00 10.00 20 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1000.00 10 T J = 25C 1.00 VGS = 0V 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 100sec 100 T J = 175C 1msec 10 1 10msec Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF1010EZ/S/L 100 90 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 Limited By Package 80 ID, Drain Current (A) 70 60 50 40 30 20 10 0 ID = 84A VGS = 10V 2.0 1.5 1.0 0.5 25 50 75 100 125 150 -60 -40 -20 0 175 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri 0.01 R3 R3 3 C 3 Ri (C/W) i (sec) 0.415 0.000246 0.410 0.000898 0.285 0.009546 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF1010EZ/S/L 400 DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 15V ID TOP 5.7A 9.1A BOTTOM 51A 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 ID = 250A 2.5 2.0 1.5 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com Fig 14. Threshold Voltage vs. Temperature 7 AUIRF1010EZ/S/L 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 100 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 51A 75 50 25 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) 8 Fig 16. Maximum Avalanche Energy vs. Temperature 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF1010EZ/S/L D.U.T Driver Gate Drive + * * * * D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF1010EZ/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUF1010EZ YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF1010EZ/S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUF1010EZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF1010EZ/S/L TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number AUF1010EZL YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com AUIRF1010EZ/S/L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 13 AUIRF1010EZ/S/L Ordering Information Package Type Base part AUIRF1010EZ AUIRF1010EZL AUIRF1010EZS 14 TO-220 TO-262 D2Pak Standard Pack Form Tube Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 50 800 800 AUIRF1010EZ AUIRF1010EZL AUIRF1010EZS AUIRF1010EZSTRL AUIRF1010EZSTRR www.irf.com AUIRF1010EZ/S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ www.irf.com WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 15