To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 1996
NDS355N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
_______________________________________________________________________________
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter NDS355N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous 20 V
IDDrain Current - Continuous (Note 1a) ± 1.6 A
- Pulsed ± 10
PDMaximum Power Dissipation (Note 1a) 0.5 W
(Note 1b) 0.46
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RθJC Thermal Resistance, Junction-to -Case (Note 1) 75 °C/W
NDS355N Rev. D1
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMICA
cards, and other battery powered circuits where fast switching,
and low in-line power loss are needed in a very small outline
surface mount package.
1.6A, 30V. RDS(ON) = 0.125Ω @ VGS = 4.5V.
Proprietary package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
D
S
G
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
TJ=125°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -12 V, VDS= 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA11.6 2V
TJ=125°C 0.5 1.3 1.5
RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 1.6 A 0.125 Ω
TJ=125°C 0.25
VGS = 10 V, ID = 1.9 A 0.085
ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 5 V 6A
gFS Forward Transconductance VDS = 5 V, ID = 1.6 A 3.5 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V,
f = 1.0 MHz 245 pF
Coss Output Capacitance 130 pF
Crss Reverse Transfer Capacitance 20 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on)Turn - On Delay Time VDD = 10 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω15 30 ns
trTurn - On Rise Time 14 30 ns
tD(off) Turn - Off Delay Time 12 25 ns
tfTurn - Off Fall Time 4 10 ns
QgTotal Gate Charge VDS = 10 V, ID = 1.6 A,
VGS = 5 V 3.5 5nC
Qgs Gate-Source Charge 1nC
Qgd Gate-Drain Charge 2nC
NDS355N Rev. D1
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
ISMaximum Continuous Source Current 0.6 A
ISM Maximum Pulse Source Current (Note 2) 6A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6 A 0.8 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD(t)=TJ−TA
RθJA
(t)=TJ−TA
RθJC
+RθCA
(t)=ID
2(t)×RDS(ON)TJ
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250oC/W when mounted on a 0.02 in2 pad of 2oz cpper.
b. 270oC/W when mounted on a 0.001 in2 pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS355N Rev. D1
1a 1b
NDS355N Rev. D1
Typical Electrical Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current
01234
0
3
6
9
12
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN-SOURCE CURRENT (A)
6.0 5.0 4.5
4.0
3.5
3.0
V =10V
GS
DS
D
0 3 6 9 12
0.5
1
1.5
2
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
D
R , NORMALIZED
DS(on)
6.0
5.0
4.5
4.0
10
V =3.5V
GS
-50 -25 025 50 75 100 125 150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE ON-RESISTANCE
J
V =4.5V
GS
I = 1.6A
D
R , NORMALIZED
DS(ON)
-50 -25 025 50 75 100 125 150
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
GATE-SOURCE THRESHOLD VOLTAGE (V)
J
V , NORMALIZED
th
V = V
DS GS
I = 250µA
D
0 2 4 6 8 10 12
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
T = 125°C
J
25°C -55°C
D
V = 4.5V
GS
R , NORMALIZED
DS(on)
Figure 3. On-Resistance Variation
with Temperature Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
123456
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
V = 10V
DS
GS
D
T = -55°C
J 25°C 125°C
NDS355N Rev. D1
-50 -25 025 50 75 100 125 150 175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I = 250µA
D
BV , NORMALIZED
DSS
J0.2 0.4 0.6 0.8 11.2 1.4
0.001
0.01
0.1
1
10
20
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
SD
S
T = 125°C
J
25°C -55°C
01234567
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
V = 5V
DS
g
GS
10
I = 1.6A
D
15
0.1 0.2 0.5 1 2 5 10 30
30
50
100
200
300
500
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
C
oss
C
rss
f = 1 MHz
V = 0V
GS
G
D
S
VDD
RL
V
V
IN
OUT
VGS DUT
RGEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, V
out
ton toff
td(off) tf
tr
td(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
Typical Electrical Characteristics (continued)
NDS355N Rev. D1
0 2 4 6 8 10 12
0
2
4
6
8
I , DRAIN CURRENT (A)
g , TRANSCONDUCTANCE (SIEMENS)
D
FS
V = 5V
DS
T = 125°C
J
25°C
-55°C
D
0.1 1 2 5 10 20 30 50
0.01
0.1
0.5
1
2
10
20
V , DRAIN-SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
V = 10V
SINGLE PULSE
T = 25°C
A
RDS(ON) Limit
DC
GS
DS
1s
100ms
10s
10ms
1ms
100us
Figure 13. Transconductance Variation with Drain
Current and Temperature Figure 14. Maximum Safe Operating Area
Typical Electrical Characteristics (continued)
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1 2
R (t) = r(t) * R
R = 250 °C/W
θJA
θJA
θJA
T - T = P * R (t)
θJA
A
J
P(pk)
t
1 t
2
Figure 15. Transient Thermal Response Curve
Note : Characterization performed using the conditions described in note 1c. Transient thermal response will
change depending on the circuit board design.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
