DATA SH EET
Product specification
Supersedes data of 1999 Jun 01 2001 Oct 11
DISCRETE SEMICONDUCTORS
BAS70 series
Schottky barrier (double) diodes
a
ge
M3D088
M3D071
2001 Oct 11 2
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70 series
FEATURES
Low forward current
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
PlanarSchottkybarrierdiodeswithan
integrated guard ring for stress
protection. Single diodes and double
diodes with different pinning are
available.
The diodes BAS70, BAS70-04,
BAS70-05 and BAS70-06 are
encapsulated in a SOT23 small
plastic SMD package. The BAS70-07
is encapsulated in a SOT143B small
plastic SMD package.
PINNING
PIN
DESCRIPTION
SOT23 SOT143B
BAS70
(see Fig.1b) BAS70-04
(see Fig.1c) BAS70-05
(see Fig.1d) BAS70-06
(see Fig.1e) BAS70-07
(see Fig.2)
1a
1a
1a
1k
1k
1
2 n.c. k2a2k2k2
3k
1k
1
,a
2k
1
,k
2a
1
,a
2a
2
4−−−−a
1
Fig.1 Simplified outline (SOT23) and symbols.
d. BAS70-05.
e. BAS70-06.b. BAS70 single diode.
a. Simplified outline SOT23.
c. BAS70-04
handbook, 2 columns
21
3
MGC482
Top view
handbook, 2 columns
1
3
2
n.c.
MGC483
handbook, 2 columns
MGC484
12
3
handbook, 2 columns
MGC485
12
3
handbook, 2 columns
MGC486
12
3
Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.
handbook, halfpage
43
21
Top view
MAM194
2
3
4
1
MARKING
Note
1. = p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
TYPE NUMBER MARKING
CODE(1)
BAS70 73
BAS70-04 74
BAS70-05 75
BAS70-06 76
BAS70-07 77
2001 Oct 11 3
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage 70 V
IFcontinuous forward current 70 mA
IFRM repetitive peak forward current tp1s;δ≤0.5 70 mA
IFSM non-repetitive peak forward current tp<10 ms 100 mA
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF= 1 mA 410 mV
IF= 10 mA 750 mV
IF=15mA 1 V
I
Rreverse current VR= 50 V; note 1; see Fig.4 100 nA
VR= 70 V; note 1; see Fig.4 10 µA
τcharge carrier life time (Krakauer
method) IF= 5 mA 100 ps
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
2001 Oct 11 4
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70 series
GRAPHICAL DATA
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
(4) Tamb =40 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
10
0 0.2 0.4 0.6 0.8 1
1
IF
(mA)
V (V)
F
MRA803
(1) (4)(2) (3)
102
10 1
10 2
(1) Tamb = 150 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
MRA805
1
10
10
020406080
V (V)
R
IR
(µA) (1)
(3)
(2)
2
10 1
10 2
10 3
f = 10 kHz.
Fig.5 Differentialforward resistanceas afunction
of forward current; typical values.
10
1110
r
dif
()
IF (mA)
MGL762
101102
102
103
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz.
0
0.5
1
1.5
2
0 20406080
MRA804
Cd
(pF)
V (V)
R
2001 Oct 11 5
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70 series
PACKAGE OUTLINES
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
99-09-13
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
2001 Oct 11 6
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70 series
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.45
0.15 0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 97-02-28
0 1 2 mm
scale
Plastic surface mounted package; 4 leads SOT143B
D
HE
EA
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
21
34
b1
bp
2001 Oct 11 7
Philips Semiconductors Product specification
Schottky barrier (double) diodes BAS70 series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese oratanyotherconditions abovethose giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,and makesnorepresentations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2001 SCA73
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Printed in The Netherlands 613514/06/pp8 Date of release: 2001 Oct 11 Document order number: 9397 750 08761