A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 3.0 mA 15 V
BVCBO IC = 1.0 µA30 V
ICBO VCB = 15 V
VCB = 15 V TA = 150 OC0.01
1.0 µ
µµ
µA
BVEBO IE = 10 µA3.0 V
hFE VCE = 1.0 V IC = 3.0 mA 20 ---
VCE(SAT) IC = 10 mA IB = 1.0 mA 0.4 V
VBE(SAT) IC = 10 mA IB = 1.0 mA 1.0 V
ftVCE = 10 V IC = 4.0 mA f = 100 MHz 600 MHz
Cob VCB = 0 V f = 140 KHz
VCB = 10 V f = 140 KHz 3.0
1.7 pF
Cib VEB = 0.5 V f = 140 KHz 2.0 pF
NFVCE = 6.0 V IC = 1.0 mA f = 60 MHz 6.0 dB
Gpe VCB = 12 V IC = 6.0 mA f = 200 MHz 15 dB
Pout
η
ηη
ηVCB = 15 V IC = 8.0 mA f = 500 MHz 30
25 mW
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N918
DESCRIPTION:
The 2N918 is Desig ned for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
IC50 mA
VCE 15 V
PDISS 300 mW @ T C = 25 OC
200 mW @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +200 OC
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE
