O1 pe sa7s081 00163349 4 i . 3875081 G E SOLID STATE O1E 18 standard Power h : 339 ~ BG Standard Power MOSFETs 0 T-39-// IRF530, IRF531, IRF532, IRF533 File Number 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 0 12A and 14A, 60V-100V" fps(On) = 0.18. Q and 0.250 Features: . | 8 SOA is power-dissipation limited " Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device 3 9208-33741 TERMINAL DIAGRAM The IRF530, IRF531, IRF532 and !tRF533 are n-channel enhancement-mode silicon-gate power field- TERMINAL DESIGNATION effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay SOURCE drivers, and drivers for high-power bipolar switching tran- prat jf sistors requiring high speed and low gate-drive power. (FUANGE) O a These types can be operated directly from integrated __ circuits. * = TOP VIEW GATE The IRF-types are supplied in the JEDEC TO-220AB plastic g2cs-s05z8 package. JEDEC TO-220AB Absolute Maximum Ratings Parameter IAF530 (RF531 IRF532 IAF533 Units Vos Orain - Source Voltage 100 60 100 60 Vv Vocr Grain - Gate Voltage (Rgg = 20KN) 1co 60 100 60 Vv Ip @T = 25C Continuous Orain Current 14 14 12 12 aA Ip @ Te = 100C Continuous Drain Current 9.0 9.0 8.0 8.0 A Ibn Pulsed Drain Current @ 56 $6 48 48 A Ves Gate - Source Voltage +20 Vv Pp @To = 25C Max. Power Dissipation . 75 (See Fig. 14} w Linear Derating Factor O68 {See Fig, 14) weer im laducuve Current, Clamped {See Fig. 15 and t6)L = $00nH A 56 I 56 I 48 I 48 n > y Sr ete B50 160 c Lead Temperatura 300 (0 063 In (1.6mm) from case for 10s) C 282 _en _. OL DEG38?S5081 00148340 o i 3875081 GE SOLID STATE - O1E 18340 DT-39-// Standard Power MOSFETs IRF530, IRF531, IRF532, IRF533 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min, | Typ. | Max. Units Test Conditions By, Drain - Source Breakdown Voltage IRF530 oss . wnesaz | OO | | v Vas = ov inesy | 6 f | - v Ip = 250,A Vasithy Gate Threshold Voltage ALL 20 { 40 v Vos = Gs. Ip = 250hA tasg __ Gate Source Leakage Forward ALL = | s00 nA, Vos = 20V 'gsgs Gate Source Leakage Reverse ALL = _|-500 nA Vos = -20V loss Zero Gate Voltage Drain Current ALL = - 250 BA Vos = Max Rating, Vgs = 0V = = [1000 [7 pA Vos = Max. Rating x 0.8, Vag = OV, Tc = 125C 'Dton) On-State Orain Current @ IRF530 | 14 _ _ A IAFS31 TRESS Vos? 'nion * Apston) max. Yas * 10 12 - - A IRF533 Ropsion) State Drain Saurce On Stata IRF530 _ Resistance @) IRF531 0.14 | 018 a Veg = 10V.Ig = B.0A rre2 | lozolo2s| 2 IAF533 * ols Forward Transconductance @) ALL 40 {55 [ - sin) Yos > 'piom * Rpstani max: 1p = 8 OA Ciss Input Capacitance ALL = 00 | 800 pF Vgg = OV, Vpg = 25V,f = 1.0MHz Coss _ Output Capacitance ALL - 300 | 500 pF SeeFig 10 Cis Reverse Transfer Capacitance ALL = 100 | 150 pF tion} _Turn-On Delay Time ALL - = 30 ns Voo 2 36V. Ip = 8.08, 2, = 150 ty Fise Time ALL - = 75 ns See Fig. 17 tajotty Turn Off Delay Time ALL = : 40 ns (MOSFET switching times ate essentially tf Fat Time ALL _ _ 45 ns Independent of operating temperature.} Total Gate Charge _ Vgg * 10V. Ip = 18A, Vg = 0.8 Max. Rating s (Gate-Source Plus Gate-Deain) ALL 18 30 nc See Fig, 18 for test circuit. (Gate charge is essentrally gs Gate-Saurce Charge ALL _ 9.0 _ nc independent of operating temparature.) Qqa Gate Drain {*Miller) Charge ALL - 9.0 - nc Lp [internal Drain Inductance _ 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbo! showing the tocenter of die. internal device ALL - 45 - nH Measured from the drantead, 6mm {0.26 o tn | from package to center of die. uo ts Intemal Source Inductance ALL - 75 - nk Measured from the source tead, 6mm s is t0.251n) trom package to source $ bonding pad. Thermal Resistance Rac Junction to Case ALL = = 1.67 | SC/W Fincs Case-to Sink ALL = 1.0 = scew surtace flat, smooth, and greased. PinJA Junction to-Ambient ALL - | 80 } ecw | Free Aw Operation Source-Drain Diode Ratings and Characteristics tg Continuous Source Current iRF530 _ _ 14 A Modified MOSFET symbol {Body Diede} IRF531 showing the integral D IRF5a2 teverse P-N junction recnfier, : mrsa3 | 7 | | | A Ign Pulse Source Current IRF530 _ G (Body Diodal @ IRFSa1 | ~ s] A - s IRF532 inesas | ~ | | 48 | A Vgp sOtode Forward Voltage @) reso _ _ 25 v Tg = 28C, Ig = 148, Vgg = OV esz} - | ~ faadoy Tq = 28C, Ig = 124, Vag = OV ter Reverse Recovery Time ALL = a6o | as Ty = 150C, Ip = 14A, digidt = 100Aips Opn Reverse Recovered Charge ALL = 2.1 = xc Ty = 150C Ie = 144, dip/dt = 100Aius ton Forward Turn on Time ALL intrinsic turn-on time is negligib'e Tum on speed is substantially controlled by Ls + Lp. @Ty = 25C 150C = @ Pulse Test: Pulse width < 300us. Outy Cycle < 2%. @ Repetitive Rating: Pulse width fimited by max. junction temperature. See Transient Therma! Impedance Curve {Fig. St. 2833875081 GE SOLID STATE ote 18341 a TS ZH f_. 3675081 0016341 2 - _ Standard Power MOSFETs __ 1 IRF530, IRF531, IRF532, IRF533 Fs a n Ip, CRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) 0 i 2 40 40 $0 Q 2 4 6 4 10 Vos. DRAIN TO SOURCE VOLTAGE (VOLTS) Vos GATE TO SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 100 8Y Apston) 20 10 as 1p, ORAIN CURRENT (AMPERES) 1p. DRAIN CURRENT {AMPERES} Tg- 25C OS [~ 7)- 150C Max Rinse = t 67C W. 02 1 a 04 08 42 16 20 19 2 5 10 20 50 100 200 400 Vos. DRAIN TO SQUACE VOLTAGE {VOLTS} Vos ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area . a a 2 2 = Zo FE ww $5 Ser os Se tae ug 28 BE on pried za bet: 2S ors 3 PULSE att ge THERMAL IMPEDANCE} + OUTY FACTOR, D* 7 S on 2 PER UNIT BASE * Ringe 167 DEG CAV. 3 3 Tye -Te* Pom Zinyctth FF ot ws 2 swt 2 5 ws 2 5 2 2 5 it 2 5 102 5 1.0 1). SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maxi Effective Transient Thermal | d J ion-to-Case Vs. Pulse Duration 2843875081 GE SOLID state O1 DEP) 3a7sna4 oo1aaya y ff 7-39-// Standard Power MOSFETs IRF530, IRF531, IRF532, IRF533 ~ a ~ nm _ - s fy, THANSCONDUCTANCE (SIEMENS) o A > ID ton) * ps(on} ~ tpn. REVERSE DRAIN CURRENT (AMPERES) xu Tye 1a 8 5 19 5 Fr % Q 1 2 3 4 Ig, ORAIN CURRENT (ARPERES) Vgp. SOURCE TO DRAIN VOLTAGE {VOLTS} Fig. 6 Typical Transconductance Vs. Drain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 06 QVoss, DAAIN.TO-SOURCE BREAKDOWN VOLTAGE (NGAMALIZED) Aipston) ORAIN-TOSOURCE ON RESISTANCE BStonh Oe NOAMALIZED) 2 40 0 r 120 160 40 0 e 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normatized On-Resistance Vs, Temperature 2000 ' - Vos * 20V, : | tooo Coy * Cop * Cyt, Coy SHORTED 5 : Cs * Coe 1200 Can" Coat rt ] Cit Cys C, CAPACITANCE (nF) ig= FOR TEST CIRCUIT SEE FIGURE 18 Vas. GATE TO SOURCE VOLTAGE IVOLTS) Ss 10 na x 40 0 & 16 R 40 Vos. ORAIK TO SOUACE VOLTAGE (VOLTS) Oy, TOTAL GATE CHARGE (nC) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 285- (3875081 G E SOLID STATE Ol ve Bf 3s7s0a1 0018343 & i~39-// Standard Power MOSFETs IRF530, IRF531, IRF532, IRF533 A, WITH PULSE 233s Duration INITIAL Ty 25C. (HEATING OF 20 ys PULSE 2 & & g & Apston) DAAIN-TO-SOURCE ON RESISTANCE (OHMS) 6 10 2 w a 50 a tp. DRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current Pp, POWER DISSIPATION (WATTS) Q 2 wo Ip. DRAIN CURRENT (AMPERES) 0 8 5 15 100 125 180 Tp. CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Cate Temperature Bn 100 140 Te, CASE TEMPERATURE (9C} Fig. 14 Power Vs. Temperature Derating Curve VARY tp TO OBTAIN REQUIRED PEAK 1, out 4 Fig. 15 Clamped Inductive Test Circuit Ey 058V p55 Vo 7 0 786ys5 PAF Vez Vo tp las TO SCOPE Fig. 17 Switching Time Test Circuit 286 Fig. 16 Clamped Inductive Waveforms o Vos {ISOLATED SUPPLY) CURREAT REGULATOR Q Te CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit