IRF7342Q - International Rectifier

HEXFET® Power MOSFET

08/03/10

Description

VDSS = -55V

RDS(on) = 0.105Ω

IRF7342QPbF

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Parameter Max. Units

VDS Drain- Source Voltage -55 V

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -3.4

ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -2.7 A

IDM Pulsed Drain Current -27

PD @TC = 25°C Power Dissipation 2.0

PD @TC = 70°C Power Dissipation 1.3

Linear Derating Factor 0.016 W/°C

VGS Gate-to-Source Voltage ± 20 V

VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V

EAS Single Pulse Avalanche Energy114

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient––– 62.5 °C/W

Thermal Resistance

Absolute Maximum Ratings

Top View

SO-8

Advanced Process Technology

Ultra Low On-Resistance

Dual P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free

These HEXFET® Power MOSFET's in a Dual SO-8 package

utilize the lastest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features of

these HEXFET Power MOSFET's are a 150°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These benefits combine to

make this design an extremely efficient and reliable device

for use in a wide variety of applications.

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it

ideal in a variety of power applications. This dual, surface

mount SO-8 can dramatically reduce board space and is

also available in Tape & Reel.

PD - 96109A

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA

––– 0.095 0.105 VGS = -10V, ID = -3.4A 

––– 0.150 0.170 VGS = -4.5V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA

gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -3.1A

––– ––– -2.0 VDS = -55V, VGS = 0V

––– ––– -25 VDS = -55V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

QgTotal Gate Charge ––– 26 38 ID = -3.1A

Qgs Gate-to-Source Charge ––– 3.0 4.5 nC VDS = -44V

Qgd Gate-to-Drain ("Miller") Charge ––– 8.4 13 VGS = -10V, See Fig. 10 

td(on) Turn-On Delay Time ––– 14 22 VDD = -28V

trRise Time ––– 10 15 ID = -1.0A

td(off) Turn-Off Delay Time ––– 43 64 RG = 6.0Ω

tfFall Time ––– 22 32 RD = 16Ω, 

Ciss Input Capacitance ––– 690 ––– VGS = 0V

Coss Output Capacitance ––– 210 ––– pF VDS = -25V

Crss Reverse Transfer Capacitance ––– 86 ––– ƒ = 1.0MHz, See Fig. 9

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 

trr Reverse Recovery Time ––– 54 80 ns TJ = 25°C, IF = -2.0A

Qrr Reverse RecoveryCharge ––– 85 130 nC di/dt = -100A/µs 

Source-Drain Ratings and Characteristics

 

  -27

-2.0

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

 Starting TJ = 25°C, L = 20mH

RG = 25Ω, IAS = -3.4A. (See Figure 8)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board, t<10 sec

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0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

100

34567

V = -25V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

-4.5V -4.5V

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Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

0246810 12

0.080

0.120

0.160

0.200

0.240

R , Drain-to-Source On Resistance

-I , Drain Current (A)

DS (on)

VGS = -4.5V

VGS = -10V

(Ω)

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-3.4 A

25 50 75 100 125 150

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

DS(on)

, Drain-to-Source On Resistance ( Ω )

0.05

0.15

0.25

0.35

0.45

2581114

-V , Gate-to-Source Voltage (V)

I = -3.4 A

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010 20 30 40

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-3.1A

V =-12V

V =-30V

V =-48V

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

1 10 100

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MI N MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

8X b

0.10 [.004]

4312

F OOT P R I N T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O JE DE C OU T L I NE MS -012 AA.

NOT ES :

1. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994.

2. CONT ROL LING DIME NS ION: MILL IMET ER

3. DIME NS IONS ARE S HOWN IN MILL IMET E RS [INCHE S ].

5 DIME NS ION DOE S NOT INCLU DE MOL D PROT RUS IONS .

6 DIME NS ION DOE S NOT INCLU DE MOL D PROT RUS IONS .

MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].

7 DIMENS ION IS THE LENGTH OF LEAD FOR SOLDERING TO

A S UBST RAT E.

MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F 7101

Y = LAST DIGIT OF THE YEAR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

P = DE S I GNAT E S L E AD- F R E E

PRODUCT (OPTIONAL)

A = ASSEMBLY SITE CODE

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRF7342QPbF

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330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/2010

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

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