z
z
z
H
i
g
h
b
r
e
a
k
d
own voltage
Low turn-on voltage
Guard ring construction for transient protection
Parameter Symbol Value Unit
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
VRRM
VRWM
100 V
Forward Continuous Current IF150 mA
Repetitive Peak Forward Current (Note 1) @ tp < 1.0s, Duty Cycle < 50% IFRM 350 mA
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms IFSM 750 mA
Power Dissipation PD 500 mW
Thermal Resistance Junction to Ambient Air RθJA 200 °C/W
Junction Temperature Tj125 °C
Storage Temperature TSTG
-55 to +150
°C
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse Breakdown Voltage(Note 2) VR R=I
100µA 100 V
Reverse Voltage Leakage Current IR
VR1=1.5V
VR2=10V
VR3=50V
VR4=75V
0.3
0.5
1
2
µA
Forward Voltage(Note 2) VF
IF1=0.1mA
IF2=10mA
IF3=250mA
0.25
0.45
1
V
Diode Capacitance CT VR=0, f=1MHz
VR=1V, f=1MHz
20
12 pF
Notes: 1. Part mounted on FR-4 board with recommended pad layout.
2. Short duration pulse test used to minimize self-heating effect.
SOD-123
GSBAT46W
Schottky Diode
Features
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Electrical Characteristics (TA=25°C unless otherwise noted)
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