DATA SH EET
Product specification
Supersedes data of 1997 Feb 28 1999 May 31
DISCRETE SEMICONDUCTORS
BCX17; BCX18
PNP general purpose transistors
o
ok, halfpage
M3D088
1999 May 31 2
Philips Semiconductors Product specification
PNP general purpose transistors BCX17; BCX18
FEATURES
•High current (max. 500 mA)
•Low voltage (max. 45 V).
APPLICATIONS
•Saturated switching and driver applications e.g. for
industrial service
•Thick and thin-film circuits.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCX19.
MARKING
Note
1. ∗= p : Made in Hong Kong.
∗= t : Made in Malaysia.
TYPE NUMBER MARKING CODE(1)
BCX17 T1∗
BCX18 T2∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCX17 −−50 V
BCX18 −−30 V
VCEO collector-emitter voltage open base
BCX17 −−45 V
BCX18 −−25 V
VEBO emitter-base voltage open collector −−5V
I
Ccollector current (DC) −−500 mA
ICM peak collector current −−1A
I
BM peak base current −−200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 May 31 3
Philips Semiconductors Product specification
PNP general purpose transistors BCX17; BCX18
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. VBE decreases by approximately −2 mV/°C with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =−20 V −−−100 nA
IE= 0; VCB =−20 V; Tj= 150 °C−−−5µA
I
EBO emitter cut-off current IC= 0; VEB =−5V −−−100 nA
hFE DC current gain IC=−100 mA; VCE =−1 V 100 −600
IC=−300 mA; VCE =−1V 70 −−
I
C
=−500 mA; VCE =−1V 40 −−
V
CEsat collector-emitter saturation
voltage IC=−500 mA; IB=−50 mA −−−620 mV
VBE base-emitter voltage IC=−500 mA; VCE =−1 V; note 1 −−−1.2 V
Cccollector capacitance IE=I
e= 0; VCB =−10 V; f = 1 MHz −9−pF
fTtransition frequency IC=−10 mA; VCE =−5 V; f = 100 MHz 80 −−MHz
1999 May 31 4
Philips Semiconductors Product specification
PNP general purpose transistors BCX17; BCX18
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 May 31 5
Philips Semiconductors Product specification
PNP general purpose transistors BCX17; BCX18
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 31 6
Philips Semiconductors Product specification
PNP general purpose transistors BCX17; BCX18
NOTES
1999 May 31 7
Philips Semiconductors Product specification
PNP general purpose transistors BCX17; BCX18
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 65
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Printed in The Netherlands 115002/03/pp8 Date of release: 1999 May 31 Document order number: 9397 750 05963
