'SAMSUNG SEMICONDUCTOR INC JHE D MJE700/701/702/703 . . Ne - HIGH DC CURRENT GAIN | - _ 4E D JP 2564242 oooz704 5 i NPN EPITAXIAL) : SILICON DARLINGT' ON TRANSISTOR T~73-B) MIN hre=750 @ Ic=-1.5.and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILFIN BASE-EMITTER RESISTORS * Complementary to MJE800/801/802/803 ABSOLUTE MAXIMUM RATINGS (T,=25C) TO-126 1, Emitter 2. Collector 3. Base Characteristic Symbol Rating Unit Collector-Base Voltage Veso . :MJE700/701 -60 v 1MJE702/703 80 aL. v Collector-Emitter Voltage Vero r :MJE700/701 -60 v :MJE702/703 80 v Emitter-Base Voltage ~ Vepo -5 v Collector Current Io 4 A Base Current . la -0.1 A Collector Dissipation Pe 40 Ww Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C Cc mK R, 510K 2 . . , Re5 068K alway We ELECTRICAL CHARACTERISTICS (T,=25C) | Ri _ Re ~ Characteristic Symbol Test Condition Min Max Unit Collector Emitter Breakdown Voltage | BVceo . :MJE700/701 fo= 50mA, la=O ~60 v :MJE702/703 80 v Collector Cutoff Current leo . iMJE700/701 Vece=60V, k=O -100 pA :MJE702/703 Vce= 80V, la=0 ~100 pA Collector Cutoff Current beso Vs=Rated BVceo, 1e=O -100 pA : Vee=Rated BV ceo, le=O ~-500 pA . 4 . Te=100C . Emitter Cutoft Current leao Vae=5V, Io=O_ -2 mA DC Current Gain :MJE700/702 Hre Voe=73V, kb=-1.5A 750 . :MJE701/703 Voe=3V, le= -2A 750 :ALL DEVICES Vee=-3V, b=4A 100 Collector-Emitter Saturation Voltage: | Vce(sat) 7 :MJE700/702 do= 1.5A, ia -30MA -25 Vv :MJE701/703 lb=-2A, b==-40mMA -2.8 Vv :ALL. DEVICES lp=4A, h=40mA -3 Vv Base-Emitter On Voltage . Vee(on) . ;MJE700/702 Vce=-3V, b=-1.5A -2.6 v :MJE701/703 Vce=3V, lb=-2A 2.5 Vv ALL. DEVICES Vee=3V, l= 4A -3 Vv cH SAMSUNG SEMICONDUCTOR 279. - = 7 _ SAMSUNG SEMICONDUCTOR . INC LYE OD J reunue ooo770s 7 ff NPN EPITAXIac MJE700/701/702/703 . SILICON DARLINGTON TRANSISTOR %, . STATIC cuaractenistic 6 b= 10004 4 -3 (A), COLLECTOR CURRENT -t ~2 -3 -4 - Veet), COLLECTOR-EMITTER VOLTAGE ' COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE $00 Vae(sat), Voe(antXV), SATURATION VOLTAGE I S t t a - nN 4 9 i -01 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 ~2 -5 -10 {A}, COLLECTOR CURRENT POWER DERATING a oo s Po(w), POWER DISSIPATION & 9 8 3 26 50 7 100 128 #150 175 200 Tc{"C), CASE TEMPERATURE . SB -37 DC CURRENT Gain. wx, DC CURRENT GAIN 10 ~0.01 -0.02 -0.05 -0.1 0.2 -O5=-1 +2 5 ~-10 we t{A), COLLECTOR CURRENT . COLLECTOR OUTPUT CAPACITANCE CalPF), CAPACITANCE N 3 S 2 1 ~0.0-0.02 0.050, 1-0,2-0.5- 1-2 -5 710~20 -50-100 Vot}, COLLECTOR-BASE VOLTAGE SAFE OPERATING AREA 5 2 1 =2 -8 -10 -20 50 100 -200 ~500 -1000 Vea(V}, COLLECTOR-EMITTEA VOLTAGE ce SAMSUNG SEMICONDUCTOR 280SAMSUNG SEMICONOUGTOR INC 24e o J eseu.42 ooorzae 4 i "PN E | 1-33-27 PITAXIAL MJE800/801/802/803 _ SILICON DARLINGTON TRANSISTOR | HIGH DC CURRENT GAIN MIN: hre=750 @ Ic=~1.5 and ~2.0A bc MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS * Complementary to MJE700/701/702/703 TO-126 ABSOLUTE MAXIMUM RATINGS (T,=25C) cbs SAMSUNG SEMICONDUCTOR . Characteristic Symbol! Rating Unit Collector-Base Voltage Veo :MJE800/801 60 . v , : :MJE802/803 80 & Vv Collector-Emitter Voltage . Vero MJE000/801 ; 60 Vv . :MJE802/803 80 Vv . Emitter-Base Voltage Vevo ; 5 V 1, Emitter 2. Collector 3. Baso " Collector Current : Io 4 A C 4 Base Current ls 01 A Collector Dissipation Po 40 Ww Junction Temperature : Tj 150 C Storage Temperature - . | Tetg -55~150 C B : R,S10Ka ELECTRICAL CHARACTERISTICS (T,=25C) Reeoaka . - , R, Ro E a ~ 4} Characteristic Symbol Tast Condition Min Max Unit Collector Emitter Breakdown Voltage | BVceo ; :MJE800/801 lb=50mA, lp=O0 - 60 v :MJE802/803 - . 80 v Collector Cutoff Current leeg 7 . :MJE800/801. - Vce=60V, l=0 100 BA . :MJE802/803 Vea=80V, k=O ; 100 pA | Cokector Cutoff Current leeo "| Vea=Rated BVczo, le=0 . 100 pA | Vca=Rated BVceo, ic=0 500 pA . Te=100C Emitter Cutoff Current . lego Vac=5V, Io=O , . 2 mA ~ DG. Current Gain :MJE800/802 bre Vee=3V, b=1.5A * 750 >MJE801/803 Vce=3V, lo=2A 750 ALL DEVICES Vee=3V, lo=4A 100 Collector-Emitter Saturation Voltage: | Vce(sat) : iMJE800/802 lb=1.5A, ls=30mA 2.6 Vv iMJE801/803 k=2A, b=40mA 2,8 Vv ALL DEVICES . k=4A, lp=40mA 3 v Base-Emitter On Voltage Vee(on) : :MJE800/802 Vee=3V, lo=1.5A 2.6 v :MJE801/803 Vce=3V, Ilo=2A 2.5 Vv :ALL DEVICES Vee=3V, Io=4A 3 Vv 281SAMSUNG SEMTCONDUCTOR INC __24e 0 J 79Lu142 ago7707 o NPN EPITAXIAL . MJE800/801/802/803- SILICON DARLINGTON TRANSISTOR . oN oO ~ T-33-29 1 STATIC CHARACTERISTIC - DC CURRENT GAIN 5g . & 3 1000 Fi d g 00 5 x u d & 200 8 2 2 oO SS i 100 60 20 fa 10 1 2 3 4 5 0.01 0.02 6.05 01 02 06 1 2 6 10 Ves(), COLLECTOR-EMITTER VOLTAGE - ig(A), COLLECTOR CURRENT . ~ COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE. .. - BASE-EMITTER SATURATION VOLTAGE . = 500 ColpF), CAPACITANCE 0.5 Vea(ant), Vex{eatX), SATURATION VOLTAGE G.2 2 Ot 1 0.01002 0.05 61 02_05- 1 2 10 0,010.02 0.050102 05 1 2 10 20 50100 - te{A), COLLECTOR CURRENT | . Veaf), COLLECTOR-BASE VOLTAGE . POWER DERATING SAFE OPERATING AREA Po{W), POWER DISSIPATION I{A), COLLECTOR CURRENT 25 50 78 100 125 150 175 200 1 2 & 10 20 50 100 200 500 1000 Te*C), CASE TEMPERATURE Vee(), COLLECTOR-EMITTER VOLTAGE GEE samsuna SEMICONDUCTOR HO 282SAMSUNG SEMICONDUCTOR INC MJE2955T - GENERAL PURPOSE AND SWITCHING APPLICATIONS . DC CURRENT GAIN SPECIFIED TO 10 AMPERES ; . High Current Gain-Bandwidth Product (fr = 2MHz (MIN))} si ABSOLUTE MAXIMUM RATINGS (T, =25C) LYE D Brscsiue 0607708 e2 | PNP SILICON TRANSISTOR T- 33-2; TO-220 Characteristic Symbol Rating Unit | Collector-Base Voltage Veso -70 v Collector-Emitter Voltage Vceo ~60 Vv - Emitter-Base Voltage Vepo - Vv Collector Current te -190 fA Base Current Ip 6 A Collector Dissipation (Tc=25C) | Po 75 Ww Collector Dissipation (Ta==25C) | Pe 0.6 WwW Junction Temperature Tj . 150 S Storage Temperature Tstg 5~150 C 1. Base 2, Collector 3. Emitter ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition Min Max Unit Collecter Emitter Sustaining Voltage | Vceo(sus) lc=200mMA, Ip=0 -60 v Collector Cutoff Current lceo Vce= -30V, Ip=0 -700 uA Collector Cutoff Current loex Vece=7OV, Vec(off)=1.5V -1 mA Vee=-7OV, Vee(otf}=1.5V -5 mA To=150C . : Emitter Cutoff Current lepo Ves=-5V, Ic=0 - mA *DC Current Gain hee r Vee = 4, lo=-4A 20 100 . Vce=4V, lb=-10A 5 *Gollector Emitter Saturation Voltage Vce(sat) ic=-4A, la=-0.4A -1.1 Vv . . =-10A, b=-3.3A -8 Vv Base. Emitter On Voltage Vaelon} Voe=4V, lo==4A -1.8 v Current Gain Bandwidth Product fr Vce=10V, lp=500mA, 2 MHz f=00KHz * Pulse test: PW<300us, duty cycle<2% Pulse 283 cs SAMSUNG SEMICONDUCTORj SAMSUNG SEMICONDUCTOR INC hue o ff 2ac4142 go07709.4 i MJE2955T > PNP SILICON TRANSISTOR , 1-93 -ay| ~ SAFE.OPERATING AREA . COLLECTOR-EMITTER SATURATION VOLTAGE : _ BASE-EMITTER SATURATION VOLTAGE Ver(eat)Vee(ext(), SATURANTION VOLTAGE 0.05 ~0.02 -0.01 -i 2 - -10 = 20 -50 ~100 01-02 -06 -1 -2 ~5 ~10 -20 ~60 100 Vest), COLLECTOR-EMITTER VOLTAGE row IofA}, COLLECTOR CURRENT DC CURRENT GAIN POWER DERATING 3 8 g bee, DC CURRENT Gam ~ o Po{W), POWER DISSIPATION 38 8 $ 0.01~0.02 -0.05-0.1-0.2 -0 -1 -2 -5 ~10 . 25 $0 75 100-125 150 175 200 225 250 . L{A}, COLLECTOR CURRENT. Te(*C), CASE TEMPERATURE GE samsuna SEMICONDUCTOR 284