December 2005 / B http://takcheong.com
1
Licensed by ON Semiconductor,
A trademark of semiconductor
Components Industries, LLC for
Zener Technology and Products.
TAK CHEON
G
®
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Maximum Ratings (Note 1)
Rating Symbol Value Units
Maximum Steady State Power Dissipation
@TL75, Lead Length = 3/8”
Derate Above 75
PD
500
4.0
mW
mW/
Operating and Storage
Temperature Range TJ, Tstg -65 to +200 °C
Note 1: Some part number series have lower JEDEC registered ratings.
Specification Features:
Zener Voltage Range = 2.4V to 12V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-35 Package (DO-204AH)
Double Slug Type Construction
Metallurgical Bonded Construction
Specification Features:
Case : Double slug type, hermetically sealed glass
Finish : All external surfaces are corrosion resistant and leads are readily solderable
Polarity : Cathode indicated by polarity band
Mounting: Any
Maximum Lead Temperature for Soldering Purposes
230, 1/16” from the case for 10 seconds
Ordering Information
Device Package Quantity
1NxxxxA Axial Lead 3000 Units / Box
1NxxxxARL Axial Lead 5000 Units / Tape & Reel
1NxxxxARL2* Axial Lead 5000 Units / Tape & Reel
1NxxxxARR1 ! Lead Form 3000 Units / Radial Tape & Reel
1NxxxxARR2 i Lead Form 3000 Units / Radial Tape & Reel
1NxxxxATA Axial Lead 5000 Units / Tape & Ammo
1NxxxxATA2* Axial Lead 5000 Units / Tape & Ammo
1NxxxxARA1 ! Axial Lead 3000 Units / Radial Tape & Ammo
1NxxxxARA2 i Axial Lead 3000 Units / Radial Tape & Ammo
* The “2” suffix refer to 26mm tape spacing.
! “1”: Polarity band up with cathode lead off first.
i “2”: Polarity band down with cathode lead off first.
1N4370A through 1N759A Series
Cathode Anode
L = Logo
437xA = 1N437xA Device Code
L
43
7x
A
Devices listed in bold italic are Tak Cheong Preferred
devices. Preferred devices are recommended choices
for future use and best overall value.
AXIAL LEAD
DO35
L = Logo
7xxA = 1N7xxA Device Code
L
7x
xA
1N4370A through 1N759A Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless
otherwise noted, VF = 1.5 V Max @ IF = 200mA for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Zener Current
ZZT Maximum Zener Impedance @ IZT
IZM Maximum DC Zener Current
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
ELECTRICAL CHARACTERISTICS (TA = 25ºC unless otherwise noted, VF = 1.5 V Max @ IF = 200mA for all types)
Zener Voltage (Note 3.) IR @ VR = 1V
VZ (Volts) @ IZT
ZZT (Note 4.)
@ IZT IZM (Note 5.) TA = 25ºC TA = 150ºC
Device
(Note 2.) Device
Marking Min Nom Max (mA) (
)(mA) (µ
µµ
µA) (µ
µµ
µA)
1N4370A 1N4370A 2.28 2.4 2.52 20 30 150 100 200
1N4271A 1N4271A 2.57 2.7 2.84 20 30 135 75 150
1N4372A 1N4372A 2.85 3 3.15 20 29 120 50 100
1N746A 1N746A 3.14 3.3 3.47 20 28 110 10 30
1N747A 1N747A 3.42 3.6 3.78 20 24 100 10 30
1N748A 1N748A 3.71 3.9 4.10 20 23 95 10 30
1N749A 1N749A 4.09 4.3 4.52 20 22 85 2 30
1N750A 1N750A 4.47 4.7 4.94 20 19 75 2 30
1N751A 1N751A 4.85 5.1 5.36 20 17 70 1 20
1N752A 1N752A 5.32 5.6 5.88 20 11 65 1 20
1N753A 1N753A 5.89 6.2 6.51 20 7 60 0.1 20
1N754A 1N754A 6.46 6.8 7.14 20 5 55 0.1 20
1N755A 1N755A 7.13 7.5 7.88 20 6 50 0.1 20
1N756A 1N756A 7.79 8.2 8.61 20 8 45 0.1 20
1N757A 1N757A 8.65 9.1 9.56 20 10 40 0.1 20
1N758A 1N758A 9.50 10 10.5 20 17 35 0.1 20
1N759A 1N759A 11.4 12 12.6 20 30 30 0.1 20
2. TOLERANCE AND TYPE NUMBER DESIGNATION (VZ)
The type numbers listed have a st andard tolerance on the nominal zener voltage of ±5%.
3. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C
±1°C and 3/8” lead length.
4. ZENER IMPEDANCE (ZZ) DERIVATION
ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current appl i ed. The specified l imits
are for IZ(AC) = 0.1 IZ(DC) with AC frequenc y = 60Hz.
5. MA XIMUM ZENER CURRENT RATINGS (IZM)
Values shown are based on the JEDEC rating of 400mW where the actual zener voltage (VZ) is known at the operating
point, the zener current may be increased and is limited by the derating curve.
1N4370A through 1N759A Series
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0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160 180 200
TL, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
HEAT
SINKS
3/8" 3/8"
PD, MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
1N4370A through 1N759A Series
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APPLICATION NOTE - ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends o n the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
TJL = θJLPD.
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(TJ) may be estimated.
Changes in voltage, VZ, can then be found from:
V = θVZTJ.
θVZ, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power -pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, a s current crowding ef fects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
LL
500
400
300
200
100
0
0 0.2 0.4 0.6 0.8 1
2.4-60 V
62-200V
L , LEAD LENGTH TO HEAT SINK (INCH)
JL, JUNCTION TOLEAD THERMAL RESISTANCE(°C/W)θ
Figure 2. Typical Thermal Resistance
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
+2C
+12C
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
34 5 6 7 8 9101112
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
I, LEAKAGE CURRENT ( A)µR
Figure 3. Typical Leakage Current
13 14 15
1N4370A through 1N759A Series
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5
+12
+10
+8
+6
+4
+2
0
-2
-4
89
VZ , ZENER VOLTAGE (VOLTS)
Figure 4a. Range for Units to 12 Volts
VZ@IZT
(NOTE 2)
RANGE
TEMPERATURE COEFFICIENTS
(-55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
100
70
50
30
20
10
7
5
3
2
1
26 10 20 30 50 70 100
VZ , ZENER VOLTAGE (VOLTS)
Figure 4b. Range for Units 12 to 100 Volts
RANGE VZ@IZ(NOTE 2)
120 130 140 150 160 170 180 190 200
200
180
160
140
120
100
VZ , ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts
VZ @ IZT
(NOTE 2)
+6
+4
+2
0
-2
-4
34
VZ , ZENER VOLTAGE (VOLTS)
Figure 5. Effect of Zener Current
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOL TS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: AFFECT TEMPERATURE COEFFICIENTS
1mA
0.01mA
VZ @ IZ
TA=25 °C
1000
C, CAP ACIT ANCE (pF)
500
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100
VZ, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4-100 Volts
TA = 25°C
0V BIAS
1V BIAS
50% OF
VZBIAS
100
70
50
30
20
10
7
5
3
2
1
120 140 160 180 190 200 220
VZ, ZENER VOLTAGE (VOLTS)
Figure 6b. Typical Capacitance 120-200 Volts
T= 25 °C
1 VOLT BIAS
50% OF V BIAS
0 BIAS
θVZ
,
TEMPERA TURE COEFFICIENT (mV/ °C)
20mA
C, CAP ACIT ANCE (pF) θVZ
,
TEMPERATURE COEFFICIENT (mV/ °C)θVZ
,
TEMPERATURE COEFFICIENT (mV/°C)
θVZ, TEMPERA TURE COEFFICIENT (mV/°C)
345 710
11 12
5678
1N4370A through 1N759A Series
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6
100
70
50
30
20
10
7
5
3
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
Ppk , PEAK SURGE POWER (WATTS)
PW, PULSE WIDTH (ms)
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
11V-91V NONREPETITIVE
1.8V-10V NONREPETITIVE
RECT ANGULAR
WAVEFORM
TJ= 25°C PRIOR TO
INITIAL PULSE
Figure 7a. Maximum Surge Power 1.8-91 Volts
1000
700
500
300
200
100
70
50
30
20
10
7
5
3
2
1
0.01 0.1 1 10 100 1000
Ppk , PEAK SURGE POWER (WATTS)
PW, PULSE WIDTH (ms)
Figure 7b. Maximum Surge Power DO-35
100-200Volts
1000
500
200
100
50
20
10
1
2
5
0.1 0.2 0.5 1 2 5 10 20 50 100
IZ , ZENER CURRENT (mA)
Figure 8. Effect of Zener Current on
Zener Impedance
ZZ, DYNAMIC IMPEDANCE (OHMS)
ZZ, DYNAMIC IMPEDANCE (OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
1 2 3 5 7 10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS)
Figure 9. Effect of Zener Voltage on Zener Impedance Figure 10. T ypical Forward Characteristics
RECT ANGULAR
WAVEFORM, TJ = 25°C
100-200VOLTS NONREPETITIVE
TJ= 25°C
iZ (rms) = 0.1 IZ (dc)
f = 60Hz
IZ=1mA
5mA
20mA
TJ= 25°C
iZ(rms)=0.1 Iz(dc)
f = 60 Hz
VZ = 2.7V
47V
27V
6.2V
VF, FOR WARD VOLTAGE (VOLTS)
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
1000
500
200
100
50
20
10
5
2
1
IF, FOR WARD CURRENT (mA)
MINIMUM
MAXIMUM
150 °C
75°C
0°C
25°C
1N4370A through 1N759A Series
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7
Figure 1 1. Zener Voltage versus Zener Current - VZ = 1 thru 16 Volts
VZ, ZENER VOLTAGE (VOLTS)
IZ, ZENER CURRENT (mA)
20
10
1
0.1
0.01
12 5 78910111213141516
TA= 25°C
Figure 12. Zener Voltage versus Zener Current - VZ = 15 thru 30 Volts
VZ , ZENER VOLTAGE (VOLTS)
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
10
1
0.1
0.01
TA= 25°C
IZ, ZENER CURRENT (mA)
6
34
1N4370A through 1N759A Series
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8
Figure 13. Zener Voltage versus Zener Current - VZ = 30 thru 105 Volts
VZ , ZENER VOLTAGE (VOLTS)
10
1
0.1
0.01
30 35 40 45 50 55 60 70 75 80 85 90 95 100
Figure 14. Zener Voltage versus Zener Current - VZ = 110 thru 220 Volts
VZ, ZENER VOLTAGE (VOLTS)
110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260
10
1
0.1
0.01
TA= 25°
65 105
IZ, ZENER CURRENT (mA)IZ, ZENER CURRENT (mA)