SEMICONDUCTOR TECHNICAL DATA KEC KIC7WO4FK SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT 3 INVERTERS The KIC7WO4FK is a high speed CMOS BUFFER fabricated with silicon gate CMOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. g = MILLIMETERS A 2.0+0.1 B 3.140.1 Cc 2.340.1 D 0.5 FEATURES a eee * High Speed : tpa=6ns(Typ.) at Vec=5V. G 0.12+0.04 * Low Power Dissipation : Icc=1#A(Max.) at Ta=25T. x on ot * High Noise Immunity : Van=Vnw=28% Vec(Min.). * Output Drive Capability : 10 LSTTL Loads. + Symmetrical Output Impedance : [Io] =Jo.=4mA(Min.) * Balanced Propagation Delays : tprn=tpn. + Wide Operating Voltage Range : Vectopry=2~6V. MAXIMUM RATINGS (Ta=25T) CHARACTERISTIC SYMBOL RATING UNIT MARKING Supply Voltage Range Vec -0.9~7 Vv H H H H DC Input Voltage Vin -0.5~ Vect0.5 Vv Type Name | O 4 DC Output Voltage Vour -0.5~ Vec+0.5 Vv Lot No. Input Diode Current lik +20 mA [| [| [| x Output Diode Current lox +20 mA e DC Output Current Tour +25 mA u U U u DC Vec/Ground Current Ioc #25 mA PIN CONNECTION(TOP VIEW) Power Dissipation Pp 200 mW Storage Temperature Tate -69 ~ 150 Cc IA Voc Lead Temperature (10s) TL 260 c 3Y 1Y 2A ty 3A GND 5] 2Y 2001. 1. 11 Revision No : 0 KEC 1/3 KIC7W04FK LOGIC DIAGRAM TRUTH TABLE A Y 7 H L 5 oy 3) (5) oy 2 3, 5) (2) 3y RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage Veco 2~6 Vv Input Voltage Vin 0~Vec V Output Voltage Vout O0~Vec Vv Operating Temperature Topr -40~85 Cc 0~1000 (Vec=2.0V) Input Rise and Fall Time t, te O~ 500 (Vcc=4.5V) ns O~ AO0O (Vec=6.0V) DC ELECTRICAL CHARACTERISTICS Ta=25C Ta=-40~85 CHARACTERISTIC |SYMBOL TEST CONDITION UNIT Vcc | MIN. | TYP. | MAX.| MIN. | MAX. 20 | 15 - - 15 - nee Vis a5 }3i5| - | - | sas} - | v put vouage 60 | 42 - - 42 - 2.0 - - 05 - 05 an Vi. 45 | - ~ |i35]| - |1a5 | ov Bpul Vonage 60 | - - 18 - 18 20 | 19 | 20 - 1.9 - a Ton=-20HA 45 | 44 | 45 - 4A - oe me Vou | Viw=Vit 60 | 59 | 60 - 5.9 - V MEDUE YoMage Tou=-4mA 45 | 418 | 431 | - [413] - Ton=-5.2mA 6.0 | 568} 580 | - | 563] - 2.0 - 0.0 | O01 - 0.1 Low-Level To. =20uA A5 - 0.0 | O01 - 0.1 O t t Volta e VoL Vin=Vin 6.0 _ 0.0 0.1 _ 0.1 Vv EDU & To.=4mA 45 | - | 017 | 026 | - | 0233 To =5.2mA 6.0 - | 018 | 0.26 | - | 033 Input Leakage In | Vin=Vec or GND 60 | - - |+o1] - | 10 Current uA Quiescent Icc | Vin=Veo or GND 60 | - - | 10 | - | 100 Supply Current 2001. 1. 11 Revision No : 0 KEC 2/3 KIC7W04FK AC ELECTRICAL CHARACTERISTICS (Ci=15pF, Vec=5V, Ta=25C) Ta=25C CHARACTERISTIC SYMBOL TEST CONDITION UNIT MIN. | TYP. | MAX. Output Transition Time bruit - - A 8 ns tra. . . re tply Propagation Delay Time t - - 6 12 ns pHI. AC ELECTRICAL CHARACTERISTICS (Ci=50pF, Input t:=tr=6ns) Ta=25C Ta=-40~ 85C CHARACTERISTIC SYMBOL TEST CONDITION UNIT Vec | MIN. | TYP. | MAX.} MIN. | MAX. tr 2.0 - 30 15 - 95 Output Transition Time bee - 4.5 - 8 15 - 19 ns Tr 6.0 - 7 13 - 16 t 2.0 - 27 75 - 95 Propagation Delay Time eo - 45 - 9 15 - 19 ns pu 6.0 - 8 13 - 16 Input Capacitance Cin - - 5 10 - 10 Tas pF Power Dissipation Cp (Note 1) _ 20 _ _ _ Capacitance Note 1 : Cpp is defined as the value of internal equivalent capacitance of IC which is calculated from the operating current consumption without load (refer to Test Circuit.) Average operating current can be obtained by the equation hereunder. Iccto=Crp* Vec*fintlcc/3 (per gate) SWITCHING CHARACTERISTICS OPERATING CURRENT TEST CIRCUIT CONSUMPTION TEST CIRCUIT Vcc 6ns 6ns Van eBV * 90% Vcc cc= VIN N 50% 10% GND P.G VIN VouT G. P.G. o tTHL tTLH 2 S | VoH 3 Cy, Vout 90% 50% nels : J 10% This input waveform is equal to VoL SWITCHING CHARACTERISTICS TEST CIRCUIT input waveform. tpHL UpLH 2001. 1. 11 Revision No : 0 KEC 3/3