2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter 30 Vdc
VCBO Collector-Base Voltage 55 Vdc
VEBO Emitter-Base Voltage 3.5 Vdc
ICCollector Current 400 mA
Thermal Data
PDTotal Device Dissipation
Derate above 25ºC5.0
28.6 Watts
mW/ ºC
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF/UHF Transistor
• Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
• 800 MHz Current-Gain Bandwidth Product
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCER Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms) 55 - - Vdc
BVCEO Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0) 30 - - Vdc
BVCBO Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc) 55 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.5 - - Vdc
ICEO Collector Cutoff Current
(VCE = 28 Vdc, IB = 0) - - 20 µA
ICEX Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc) - - 100 µA
(on)HFE DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
5.0
10
25
-
-
-
-
200
200
-
-
-
VCE(sat) Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc) - - 1.0 Vdc
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
fTCurrent-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz) 2N3866
2N3866A 500
800 800
--
-MHz
COB Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz) -2.8 3.5 pF
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
GPE Power Gain Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C 10 - - dB
Pout Output Power Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C 1.0 - - Watts
ηC
Collector Efficiency Test Circuit-Figure 1
Pin = 0.1 W, VCE = 28Vdc
f = 400 MHz, TC = 25 C 45 - - %
8-60
L1
3-35 RFC
12
5.6 OHMS
1000
0.9-7
POUT
(RL=50 OHMS)
VCE = -28V
RFC
RFC
8-60
LS
PIN
(RS=50 OHMS)
Figure 1 - 400 MHz RF AMPLIFIER CIRCUIT FOR GPE, POUT, AND EFFICIENCY SPECIFICATIONS.
L1: 2 TURNS No. 18 wire, ¼” ID, 1/8” long Ls: 2 ¾ TURNS No. 18 wire, ¼” ID, 3/16” long
Capacitor values in pF unless Tuning capacitors are air variable
otherwise indicated.
.
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A
Efficiency (%)
GPE Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Package
Device
IC max (mA)
RF (Low Power PA / General Purpose) Selection
MACRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MACRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 8 55 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 8 55 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 8 55 12.5 16 400
MACRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MACRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866ANPN 400 1 10 45 28 30 400
SO-8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MACRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MACRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 6 12 50
Pout
GPE (dB)
GPE VCC
BVCEO
Type
Packag
Device
Type
NF (dB)
NF IC (mA)
NF VCE
GNF (dB)
Ftau (MHz)
Ccb
(pF)
BVCEO
TO-39 2N5109 NPN 200 310 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 617 900 112 50
TO-72 2N2857 NPN 300 5.5 50 613 1600 115 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 325 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 115 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 115 50
MACRO T BFR91 NPN 500 1.9 2511 16.5 5000 112 35
MACRO T BFR96 NPN 500 210 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 250 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 250 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 210 15 18 5000 115 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 510 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 390 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5614 17 8000 0.45 10 100
MACRO X MRF571 NPN 1000 1.5 10 610 8000 110 70
MACRO T BFR91 NPN 1000 2.5 2 5 8 11 5000 112 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 115 30
TO-39 MRF545 PNP 14 1400 2 70 400
TO-39 MRF544 NPN 13.5 1500 70 400
RF (LNA / General Purpose) Selection Guide
Macro X
Power
Macro T SO-8
RF Low Power PA, LNA, and General Purpose Discrete Selector GuideRF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Low Cost RF Plastic Package Options
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N3866 / 2N3866A