7-249
9
VP0808
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92
-80V 5.0Ω-1.1A VP0808L
Order Number / Package
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Applications
■■Motor controls
■■Converters
■■Amplifiers
■■Switches
■■Power supply circuits
■■Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Features
■■Free from secondary breakdown
■■Low power drive requirement
■■Ease of paralleling
■■Low CISS and fast switching speeds
■■Excellent thermal stability
■■Integral Source-Drain diode
■■High input impedance and high gain
■■Complementary N- and P-channel devices
TO-92
S G D
7-250
90%
10%
90%
90%
10% 10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
VP0808
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
°C/W °C/W
TO-92 -0.28A -3A 1W 125 170
*ID (continuous) is limited by max rated Tj.
Thermal Characteristics
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage -80 V VGS= 0V, ID =-10µA
VGS(th) Gate Threshold Voltage -1.0 -4.5 V VGS = VDS, ID = -1mA
IGSS Gate Body Leakage -100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current -10 VGS = 0V, VDS = Max Rating
-500 µAV
GS = 0V, VDS = Max Rating
TA = 125°C
ID(ON) ON-State Drain Current -1.1 A VGS = -10V, VDS = -15V
RDS(ON) Static Drain-to-Source ON-State Resistance 5.0 ΩVGS = -10V, ID = -1A
GFS Forward Transconductance 200 m VDS = -10V, ID = -0.5A
CISS Input Capacitance 150
COSS Common Source Output Capacitance 60 pF
CRSS Reverse Transfer Capacitance 25
td(ON) Turn-ON Delay Time 15
trRise Time 40
td(OFF) Turn-OFF Time 30
tfFall Time 30
VSD Diode Forward Voltage Drop -1.2 V VGS = 0V, ISD = -0.9A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics (@ 25°C unless otherwise specified)
ns VDD = -25V, ID = -0.5A
RGEN = 25Ω
VGS = 0V, VDS = -25V
f = 1MHz
Switching Waveforms and Test Circuit
Ω
