Small Signal Product CREAT BY ART
- Epitaxial planar die construction
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Packing code with suffix "G" means
Green compound (Halogen free)
- Terminal : Matte tin plated, lead free, solderable
per MIL-STD-202, method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Weight : 0.19 gram (approximately)
SYMBOL UNIT
I
T(RMS)
A
Peak Forward Surge Current，T
A
=25°C
(1/2 Cycle，Sine Wave，60Hz）
Circuit Fusing Considerations（t= 8.3 ms）I
2
tA
2
s
Forward Peak Gate Power （T
A
=25°C，PW≤1 μs）P
GM
W
Forward Average Gate Power（T
A
=25°C) P
GF(AV)
W
Forward Peak Gate Current（T
A
=25°C，PW≤1 μs）I
GFM
A
Reverse Peak Gate Current（T
A
=25°C，PW ≤ 1 μs）V
GRM
V
Operating junction temperature range T
J
°C
Storage temperature range T
STG
°C
Notes: 1. Valid provided that electrodes are kept at ambient temperature
SYMBOL UNIT
Peak Forward On-State Voltage
at I
TM
=1A Peak, T
A
=25
o
C
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., R
L
=100Ω
Gate Trigger Current (Continous dc)
at Anode Voltage = 7 Vdc., R
L
=100Ω
at Anode Voltage = Rated V
DRM
, R
L
=100Ω)
Holding Current at Anode Voltage =7 Vdc, Initiating Current=20mA I
H
mA
Document Number: DS_S1412032 Version: D15
-40 ~ +125
-40 ~ +150
- Case : TO-92 plastic package
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER
MCR100-3 - MCR100-8
Taiwan Semiconductor
Th
y
ristors
FEATURES
TO-92
MECHANICAL DATA
VALUE
-0.8V
-5
V
GT
I
TSM
5
1
0.415
10
600MCR100-8
200
100
0.8
Forward Current RMS (All Conduction Angles）
MCR100-3
500
400
300
-1.7V
I
DRM
I
RRM
V
TM
μA
I
GT
- 200
Peak Forward or Reverse Blocking Current -10
at V
AK
= Rated V
DRM
or V
RRM
V
DRM
V
RRM
μA
Peak Repetitive Forward and Reverse MCR100-4
Blocking Voltage（T
J
=25°C to 125°C，MCR100-5
0.01
0.1
V
A
PARAMETER MIN MAX
R
GK
=1KΩ）MCR100-6
MCR100-7
Small Si
g
nal Product CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Document Number: DS_S1412032 Version: D15
MCR100-3 - MCR100-8
Taiwan Semiconductor
10
20
30
40
50
60
70
80
90
100
-40 -25 -10 5 20 35 50 65 80 95 110
TJ, Junction Temperature (OC)
Gate Trigger Current (μA)
Fig. 1 Typical Gate Trigger Curent VS.
Junction Temperature
10
100
1000
-40 -25 -10 5 20 35 50 65 80 95 110
Holding Current(μA)
TJ , Junction Temperature (OC)
Fig. 3 Typical Holding Curent VS.
Junction Temperature
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-40 -25 -10 5 20 35 50 65 80 95 110
TJ . Junction Temperature (OC)
Gate Trigger Voltage(Volts)
Fig. 2 Typical Gate Trigger Voltage
VS. Junction Temperature
10
100
1000
-40 -25 -10 5 20 35 50 65 80 95 110
Latching Current(μA)
TJ, Junction Temperature (OC)
Fig. 4 Typical Lacthing Curent VS.
Junction Temperature
40
50
60
70
80
90
100
110
120
0 0.1 0.2 0.3 0.4 0.5
TC, Maximum Allowable Case Temperature(OC)
IT(RMS), RMS On-State Current (AMPS)
Fig. 5 Typical RMS Current Derating
DC
180OC
120OC
90OC60OC
30OC
0.1
1
10
0.5 0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5
IT,Instantaneous On-State Current (A)
VT,Instantaneous On-State Voltage (volts)
Fig. 6 Typical On-State Characteristics
Maximum @ TJ=25oC
Maximum @ TJ=110oC
CREAT BY ART
Small Signal Product
Min Max Min Max
A 4.30 5.10 0.169 0.201
B 4.30 4.70 0.169 0.185
C 12.50 - 0.492 -
D 2.20 2.80 0.087 0.110
E 0.35 0.55 0.014 0.022
F 0.59 1.40 0.023 0.055
G 0.29 0.51 0.011 0.020
H 3.30 4.10 0.130 0.161
Min Max Min Max
A 4.30 5.10 0.169 0.201
B 4.30 4.70 0.169 0.185
C 12.50 14.50 0.492 0.571
D 1.17 1.37 0.046 0.054
E 0.35 0.55 0.014 0.022
F 1.17 1.37 0.046 0.054
G 0.59 1.40 0.023 0.055
H 0.29 0.51 0.011 0.020
I 3.30 4.10 0.130 0.161
Document Number: DS_S1412032 Version: D15
ORDER INFORMATION (EXAMPLE)
MCR100-3 - MCR100-8
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
TO-92 (Ammo)
DIM. Unit (mm) Unit (inch)
TO-92 (Bulk)
DIM. Unit (mm) Unit (inch)
A
B
C
D
E
F
G
H
MCR100‐3A1G
Green compoundcode
Packingcode
Partno.
CREAT BY ART
Small Signal Product
x = Device P/N from 3~8
Document Number: DS_S1412032 Version: D15
MARKING DIAGRAM
MCR100-3 - MCR100-8
Taiwan Semiconductor
Small Signal Product
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412032 Version: D15
MCR100-3 - MCR100-8
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
