MJE2955T - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

!  

  

. . . designed for use in general–purpose amplifier and switching applications.

•DC Current Gain Specified to 10 Amperes

•High Current Gain — Bandwidth Product —

fT = 2.0 MHz (Min) @ IC = 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

6.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

MJE3055T, MJE2955T

ÎÎÎÎÎ

PD†

ÎÎÎÎÎÎ

0.6

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–55 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

1.67

ÎÎÎ

C/W

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

5.0

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.2

0.1 20 30

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25

C (D = 0.1)

IC, COLLECTOR CURRENT (AMP)

7.0 10

5.0 ms 1.0 ms

50 60

0.5

7.0

3.0

0.7

0.3

TJ = 150

100

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150

C. TC is vari-

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided TJ(pk)

150

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown. (See AN415A)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE2955T/D

 Motorola, Inc. 1995





10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 VOLTS

75 WATTS

*Motorola Preferred Device





 

CASE 221A–06

TO–220AB

REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

700

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 70 Vdc, IE = 0)

(VCB = 70 Vdc, IE = 0, TC = 150

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 4.0 Adc, VCE = 4 0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

5.0

ÎÎÎÎ

100

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 4.0 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.1

8.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

ÎÎÎÎ

2.0

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

20%.

0TC, CASE TEMPERATURE (

75 100 17525 50

Figure 2. DC Current Gain

125 150

500

0.01

Figure 3. Power Derating

IC, COLLECTOR CURRENT (AMP)

5.0 0.02 0.05 0.1 0.2 1.0 2.0 100.5

300

200

100

hFE, DC CURRENT GAIN

5.0

TJ = 150

–55

VCE = 2.0 V

PD, POWER DISSIPATION (WATTS)

MJE3055T

MJE2955T

0.1 IC, COLLECTOR CURRENT (AMP)

0.5 1.0 100.2 0.3 2.0 3.0

Figure 4. “On” Voltages

2.0

1.6

1.2

0.8

V, VOLTAGE (VOLTS)

0.4

5.0

TJ = 25

VBE(sat) @ IC/IB = 10

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

MJE2955T

0.1 IC, COLLECTOR CURRENT (AMP)

0.5 1.0 100.2 0.3 2.0 3.0

1.4

1.2

1.0

0.8

V, VOLTAGE (VOLTS)

0.4

5.0

TJ = 25

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

MJE3055T

0.6

0.2

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

 

4 Motorola Bipolar Power Transistor Device Data

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MJE2955T/D

*MJE2955T/D*

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