Mar. 2002
CM600DU-24F
4-
φ
6.5
MOUNTING
G2E2E1G1
E2 C1C2E1
RTC
RTC
Tc measured
point
Tc measured
point
CIRCUIT DIAGRAM
HOLES
140
130
110
±0.25
10
110
±0.25
130
14.5 40 14.5 20.4 10
35
+1
-0.5
24.5
+1
-0.5
36 43.8 13.8 11.5
8
20
9
(26) (26) (26)
(15)
(15)
65
3-M8 NUTS 4-M4 NUTS
G2E2E1G1
C2E1
E2
C1
APPLICATION
General purpose inverters & Servo controlers, etc
MITSUBISHI IGBT MODULES
CM600DU-24F
HIGH POWER SWITCHING USE
● IC ...................................................................600A
● VCES.......................................................... 1200V
● Insulated Type
● 2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Mar. 2002
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 600A, VGE = 15V
VCC = 600V, IC = 600A
VGE1 = VGE2 = 15V
RG = 1.0Ω, Inductive load switching operation
IE = 600A
IE = 600A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied*2 (1/2 module)
Tc measured point is just under the chips
IC = 60mA, VCE = 10V
IC = 600A, VGE = 15V
VCE = 10V
VGE = 0V
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance*3
External gate resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
1200
±20
600
1200
600
1200
1540
–40 ~ +150
–40 ~ +125
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
1200
MITSUBISHI IGBT MODULES
CM600DU-24F
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
V
N • m
g
2
80
2.55
—
230
10
6
—
450
200
800
300
500
—
3.35
0.081
0.11
—
0.032
5.2
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
°C/W
Ω
—
—
1.95
2.05
—
—
—
6600
—
—
—
—
—
43.2
—
—
—
0.010
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
6V
V
57
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Main terminal to base plate, AC 1 min.
Main Terminal M8
Mounting holes M6
G(E) Terminal M4
Typical value
Symbol Parameter
Collector current
Emitter current
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
MAXIMUM RATINGS
(Tj = 25°C)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Test conditions
Mar. 2002
MITSUBISHI IGBT MODULES
CM600DU-24F
HIGH POWER SWITCHING USE
600
800
1000
1200
400
200
00 0.5 1 1.5 2 2.5 3 3.5 4
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
0 0.5 1 1.5 2 3.5 42.5 3
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
0.5
1
1.5
2
2.5
3
00 200 400 600 800 1000 1200
5
4
4.5
3
3.5
2
2.5
1
1.5
0.5
06 8 10 12 14 16 18 2220
10
1
10
2
23 57
10
3
23 57
10
1
2
3
5
7
10
2
2
10
3
2
3
5
7
3
5
7
10
0
8.5
9.5
Tj = 25°C
Tj = 125°C
VGE = 15V
Tj = 25°C
td(off)
td(on)
tf
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
tr
10
9
8
VGE=20V
Tj=25°C11 15
IC = 1200A
IC = 600A
IC = 240A
VGE = 0V
Cies
Coes
Cres
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive load
Tj = 25°C
PERFORMANCE CURVES
Mar. 2002
MITSUBISHI IGBT MODULES
CM600DU-24F
HIGH POWER SWITCHING USE
101102
23 57 103
23 57
101
102
2
3
5
7
103
2
3
5
7
10–3
100
7
55
3
2
10–2
7
3
2
100
7
5
3
2
3
2
10–1
7
5
3
2
10
–5
2357 2357 2357 23 57
10
–4
10
–2
10
–1
10
–3
0
2
4
6
8
10
12
14
16
18
20
0 2000 4000 6000 8000 10000
1
Irr
trr
10
–1
10
0
10
1
23 57 23 57
VCC = 400V VCC = 600V
IC = 600A
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c) (°C/W)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
Single Pulse
TC = 25°C
IGBT part:
Per unit base = R
th(j–c)
= 0.081°C/W
FWDi part:
Per unit base = R
th(j–c)
= 0.11°C/W
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive load
