MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE CM600DU-24F IC ................................................................... 600A VCES .......................................................... 1200V Insulated Type in a pack 2-elements APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 10 110 0.25 43.8 13.8 11.5 14.5 130 40 110 0.25 E2 9 Tc measured point 4-M4 NUTS Tc measured point G1 (15) 4-6.5MOUNTING E2 G2 HOLES C2E1 E2 C1 RTC G1 E1 +1 35 -0.5 +1 24.5 -0.5 RTC 8 65 3-M8 NUTS 14.5 E1 C1 (26) E2 (26) C2E1 20 (26) G2 (15) 20.4 10 36 CIRCUIT DIAGRAM Mar. 2002 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Torque strength -- Weight Conditions G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Ratings 1200 20 600 1200 600 1200 1540 -40 ~ +150 -40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value Unit V V A A A A W C C V N*m g ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol Parameter Test conditions Limits Typ. -- Max. 2 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 5 6 7 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.0 -- 1.95 2.05 -- -- -- 6600 -- -- -- -- -- 43.2 -- -- -- 0.010 -- -- 80 2.55 -- 230 10 6 -- 450 200 800 300 500 -- 3.35 0.081 0.11 -- A VCE(sat) VGE = VGES, VCE = 0V Tj = 25C IC = 600A, VGE = 15V Tj = 125C Thermal resistance*1 Contact thermal resistance Thermal resistance*3 External gate resistance VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 1.0, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips 0.032 5.2 mA V nF nF nF nC ns ns ns ns ns C V C/W C/W C/W C/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar. 2002 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 VGE=20V 600 8.5 400 8 200 0 0.5 1 1.5 2 2.5 3 3.5 3 VGE = 15V 2.5 2 1.5 1 Tj = 25C Tj = 125C 0.5 0 4 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 104 Tj = 25C 4.5 4 3.5 3 2.5 IC = 1200A 2 IC = 600A 1.5 IC = 240A 1 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 9 800 0 0.5 0 CAPACITANCE Cies, Coes, Cres (nF) 10 9.5 1000 11 6 8 10 12 14 16 18 20 7 5 3 2 7 5 3 2 102 7 5 3 2 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 103 7 5 7 5 3 2 3 2 Cies 102 7 5 3 2 101 7 5 3 2 Tj = 25C 103 101 22 Coes VGE = 0V Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) Tj=25C COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) td(off) tf td(on) 102 7 5 3 2 tr Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 125C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar. 2002 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE 103 7 5 3 2 Irr trr 102 1 7 5 Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive load 3 2 101 1 10 2 3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 7 102 2 3 5 7 103 EMITTER CURRENT (A) 10-5 2 3 5 710-4 2 3 5 710-3 2 3 5 710-2 2 3 5 7 10-1 100 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.081C/W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.11C/W 10-1 7 5 3 2 3 2 10-2 7 5 3 2 10-3 100 7 5 3 2 Single Pulse TC = 25C 10-1 2 3 5 7 100 2 3 5 7 101 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 600A 18 16 VCC = 400V 14 VCC = 600V 12 10 8 6 4 2 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Mar. 2002