DATA SH EET
Product data sheet
Supersedes data of 2003 May 15 2004 Mar 26
DISCRETE SEMICONDUCTORS
BZX884 series
Voltage regulator diodes
M3D891
BOTTOM VIEW
2004 Mar 26 2
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX884 series
FEATURES
Two tolerance series: ±2% and ±5%
Working voltage range: nominal 2.4 V to 75 V
(E24 range)
Leadless ultra small plastic package
(1 mm × 0.6 mm × 0.5 mm)
Boardspace 1.17 mm2 (approximately 10% of SOT23)
Power dissipation comparable to SOT23.
APPLICATIONS
General regulation functions
ESD ultra high-spe ed switching
High frequency applications
Mobile communication, digital (still) cameras, PDAs and
PCMCIA cards.
DESCRIPTION
Low-power voltage regulator diodes encapsulated in
SOD882 leadless ultra small plastic packages.
handbook, halfpage
MAM472Bottom view
Fig.1 Simplified outline (SOD882) and symbol.
The marking bar indicates the cathode.
MARKING
TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE TYPE
NUMBER MARKING
CODE
Marking codes for BZX884-B2V4 to BZX884-B75
BZX884-B2V4 A1 BZX884-B6V2 AB BZX884-B16 C1 BZX884-B43 CB
BZX884-B2V7 A2 BZX884-B6V8 AC BZX884-B18 C2 BZX884-B47 CC
BZX884-B3V0 A3 BZX884-B7V5 AD BZX884-B20 C3 BZX884-B51 CD
BZX884-B3V3 A4 BZX884-B8V2 AE BZX884-B22 C4 BZX884-B56 CE
BZX884-B3V6 A5 BZX884-B9V1 AF BZX884-B24 C5 BZX884-B62 CF
BZX884-B3V9 A6 BZX884-B10 AG BZX884-B27 C6 BZX884-B68 CG
BZX884-B4V3 A7 BZX884-B11 AH BZX884-B30 C7 BZX884-B75 CH
BZX884-B4V7 A8 BZX884-B12 AJ BZX884-B33 C8
BZX884-B5V1 A9 BZX884-B13 AK BZX884-B36 C9
BZX884-B5V6 AA BZX884-B15 AL BZX884-B39 CA
Marking codes for BZX884-C2V4 to BZX884-C75
BZX884-C2V4 B1 BZX884-C6V2 BB BZX884-C16 D1 BZX884-C43 DB
BZX884-C2V7 B2 BZX884-C6V8 BC BZX884-C18 D2 BZX884-C47 DC
BZX884-C3V0 B3 BZX884-C7V5 BD BZX884-C20 D3 BZX884-C51 DD
BZX884-C3V3 B4 BZX884-C8V2 BE BZX884-C22 D4 BZX884-C56 DE
BZX884-C3V6 B5 BZX884-C9V1 BF BZX884-C24 D5 BZX884-C62 DF
BZX884-C3V9 B6 BZX884-C10 BG BZX884-C27 D6 BZX884-C68 DG
BZX884-C4V3 B7 BZX884-C11 BH BZX884-C30 D7 BZX884-C75 DH
BZX884-C4V7 B8 BZX884-C12 BJ BZX884-C33 D8
BZX884-C5V1 B9 BZX884-C13 BK BZX884-C36 D9
BZX884-C5V6 BA BZX884-C15 BL BZX884-C39 DA
2004 Mar 26 3
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX884 series
ORDERING INFORMATION
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g System (IEC 60134).
Note
1. Refer to SOD882 st an da rd mounting conditions (footp rint), FR4 with 60 μm copper strip line.
THERMAL CHARACTE RISTICS
Note
1. Refer to SOD882 st an da rd mounting conditions (footp rint), FR4 with 60 μm copper strip line.
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BZX884-B2V4
to
BZX884-B75
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm SOD882
BZX884-C2V4
to
BZX884-C75
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm SOD882
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
IFcontinuous forward current 200 mA
IZSM non-repe titiv e pe ak reverse
current tp = 100 μs; square wave;
Tamb = 25 °C; prior to surge see Tables 1 and
2
Ptot total power dissipation Tamb = 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W
2004 Mar 26 4
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX884 series
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage IF = 10 mA; see Fig.2 0.9 V
IRreverse current
BZX884-B/C2V4 VR = 1 V 50 μA
BZX884-B/C2V7 VR = 1 V 20 μA
BZX884-B/C3V0 VR = 1 V 10 μA
BZX884-B/C3V3 VR = 1 V 5 μA
BZX884-B/C3V6 VR = 1 V 5 μA
BZX884-B/C3V9 VR = 1 V 3 μA
BZX884-B/C4V3 VR = 1 V 3 μA
BZX884-B/C4V7 VR = 2 V 3 μA
BZX884-B/C5V1 VR = 2 V 2 μA
BZX884-B/C5V6 VR = 2 V 1 μA
BZX884-B/C6V2 VR = 4 V 3 μA
BZX884-B/C6V8 VR = 4 V 2 μA
BZX884-B/C7V5 VR = 5 V 1 μA
BZX884-B/C8V2 VR = 5 V 700 nA
BZX884-B/C9V1 VR = 6 V 500 nA
BZX884-B/C10 VR = 7 V 200 nA
BZX884-B/C11 VR = 8 V 100 nA
BZX884-B/C12 VR = 8 V 100 nA
BZX884-B/C13 VR = 8 V 100 nA
BZX884-B/C15 to 75 VR = 0.7 VZnom 50 nA
2004 Mar 26 5
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX884 series
Table 1 Per type BZX884-B /C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
BZX884-
B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 5 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
Tol. ±2% (B) Tol. ±5% (C) at IZtest = 1 mA at IZtest = 5 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
2V4 2.35 2.45 2.28 2.52 275 400 70 100 1.3 450 6.0
2V7 2.65 2.75 2.57 2.84 300 450 75 100 1.4 440 6.0
3V0 2.94 3.06 2.85 3.15 325 500 80 95 1.6 425 6.0
3V3 3.23 3.37 3.14 3.47 350 500 85 95 1.8 410 6.0
3V6 3.53 3.67 3.42 3.78 375 500 85 90 1.9 390 6.0
3V9 3.82 3.98 3.71 4.10 400 500 85 90 1.9 370 6.0
4V3 4.21 4.39 4.09 4.52 410 600 80 90 1.7 350 6.0
4V7 4.61 4.79 4.47 4.94 425 500 50 80 1.2 325 6.0
5V1 5.00 5.20 4.85 5.36 400 480 40 60 0.5 300 6.0
5V6 5.49 5.71 5.32 5.88 80 400 15 40 1.0 275 6.0
6V2 6.08 6.32 5.89 6.51 40 150 610 2.2 250 6.0
6V8 6.66 6.94 6.46 7.14 30 80 615 3.0 215 6.0
7V5 7.35 7.65 7.13 7.88 15 80 210 3.6 170 4.0
8V2 8.04 8.36 7.79 8.61 20 80 210 4.3 150 4.0
9V1 8.92 9.28 8.65 9.56 20 100 210 5.2 120 3.0
10 9.80 10.20 9.50 10.50 20 150 210 6.0 110 3.0
11 10.78 11.22 10.45 11.55 25 150 210 6.9 110 2.5
12 11.76 12.24 11.40 12.60 25 150 210 7.9 105 2.5
13 12.74 13.26 12.35 13.65 25 170 210 8.8 105 2.5
15 14.70 15.30 14.25 15.75 25 200 315 10.7 100 2.0
16 15.68 18.32 15.20 16.80 50 200 10 40 12.4 90 1.5
18 17.64 18.36 17.10 18.90 50 225 10 45 14.4 80 1.5
20 19.60 20.40 19.00 21.00 60 225 15 55 16.4 70 1.5
22 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25
24 23.52 24.48 22.80 25.20 60 250 25 70 20.4 55 1.25
2004 Mar 26 6
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX884 series
Table 2 Per type BZX884-B /C27 to B/C75
Tj = 25 °C unless otherwise specified.
BZX884-
B or C
XXX
WORKING VOLTAGE
VZ (V)
at IZ = 2 mA
DIFFERENTIAL RESISTANCE
rdif (Ω)TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
Tol. ±2% (B) Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
27 26.46 27.54 25.65 28.35 65 300 25 80 23.4 50 1.0
30 29.40 30.60 28.50 31.50 70 300 30 80 26.6 50 1.0
33 32.34 33.66 31.35 34.65 75 325 35 80 29.7 45 0.9
36 35.28 36.72 34.20 37.80 80 350 35 90 33.0 45 0.8
39 38.22 39.78 37.05 40.95 80 350 40 130 36.4 45 0.7
43 42.14 43.86 40.85 45.15 85 375 45 150 41.2 40 0.6
47 46.06 47.94 44.65 49.35 85 375 50 170 46.1 40 0.5
51 49.98 52.02 48.45 53.55 90 400 60 180 51.0 40 0.4
56 54.88 57.12 53.20 58.80 100 425 70 200 57.0 40 0.3
62 60.76 63.24 58.90 65.10 120 450 80 215 64.4 35 0.3
68 66.64 69.36 64.60 71.40 150 475 90 240 71.7 35 0.25
75 73.50 76.50 71.25 78.75 170 500 95 255 80.2 35 0.2
2004 Mar 26 7
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX884 series
GRAPHICAL DATA
handbook, halfpage
0.6 1
300
100
0
200
MBG781
0.8 VF (V)
IF
(mA)
Fig.2 Forward current as a function of forward
voltage; typical values.
Tj = 25 °C.
handbook, halfpage
0.5
2
10
1
10
2
MLD444
1IZ (mA)
SZ
(mV/K)
10
1.5
1
0.5
0
2V4
4V7
4V3
3V9
3V6
3V3
3V0
2V7
Fig.3 Temperature coefficient as a functi on of
working current; typical values.
BZX884-B/C2V4 to B/C4V7.
Tj = 25 to 150 °C.
handbook, halfpage
12
4
4
8
0
MLD445
101110
IZ (mA)
SZ
(mV/K)
102
15
13
12
11
10
9V1
5V6
5V1
8V2
7V5
6V8
6V2
Fig.4 Temperature coefficient as a functi on of
working current; typical values.
BZX884-B/C5V1 to B/C15.
Tj = 25 to 150 °C.
2004 Mar 26 8
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX884 series
PACKAGE OUTLINE
UNIT A1
max.
A(1) be
1L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.50
0.46 0.55
0.47
0.03 0.62
0.55 0.65
DIMENSIONS (mm are the original dimensions)
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
0.30
0.22
SOD882 03-04-16
03-04-17
DE
1.02
0.95
L
E
(2)
2
1b
A1
A
D
L
L
eadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD88
2
0 0.5 1 mm
scale
e1
2004 Mar 26 9
NXP Semiconductors Pr oduct data sheet
Voltage regulator diodes BZX884 series
SOLDERING
Reflow soldering is the only recommended soldering method.
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The prod uct status of dev i ce(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values a re s t ress ratings only and
operation of the device at these or an y other conditions
above those given in the Characteristics sections of this
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Printed in The Netherlands R76/02/pp10 Date of release: 2004 Mar 26 Document orde r number: 9397 750 12713