Power Transistors 2N101 1 (GERMANIUM) Ves = 80V QNIO11 JAN AVAILABLE c=BA Pp = 90W PNP germanium power transistors for general purpose power amplifier and switching applications in military and industrial equipment. Operating temper - CASE 11 ature range and power dissipation exceed military (TO-3) specifications. MAXIMUM RATINGS Rating Symbol 2N1011 Unit Collector-Emitter Voltage Voro 40 Vdc Collector-Emitter Voltage Vors 80 Vdc Coliector-Base Voltage Von 80 Vde Emitter-Base Voltage Vers 40 Vdc Collector Current Io 5 Adc Total Device Dissipation @ T, = 25C Py 90 Watts Derate above 25C 1.2 w/c Operating and Storage Junction T Piste % Temperature Range -65 to +100 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 830 0.8 c/w 100 90 oO Oo oO o POWER-TEMPERATURE DERATING CURVE Pp Power Dissipation (Watts) Qo we oS m Q o 0 20 40 60 80 10 To: Case Temperature (Cc) 7-44