3EZ3.9D5~3EZ39D5
Zener diode
Features
1. Low profile package
2. Excellent clamping capability
3. Glass passiv ated junction
4. VZ-tolerance±5%
Applications
Voltage st abil ization
Absolute Maximum Ratings
Tj=25℃ Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb≤75℃ P
V3 W
Z-current IZPV/VZmA
Junction temperature Tj150 ℃
Storage temperature range Tstg -55~+150 ℃
Stresses exceeding maximum rati ngs may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃ Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA VF 1.2 V
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3EZ3.9D5~3EZ39D5
VZnom1) IZT for Z
zT ZZK at IZK IR at VRIZM
Type V mA Ω Ω mA μA V mA
3EZ3.9D5 3.9 192 <4.5 <400 1.0 <80 1.0 630
3EZ4.3D5 4.3 174 <4.5 <400 1.0 <30 1.0 590
3EZ4.7D5 4.7 160 <4.0 <500 1.0 <20 1.0 550
3EZ5.1D5 5.1 147 <3.5 <550 1.0 <5 1.0 520
3EZ5.6D5 5.6 134 <2.5 <600 1.0 <5 2.0 480
3EZ6.2D5 6.2 121 <1.5 <700 1.0 <5 3.0 435
3EZ6.8D5 6.8 110 <2.0 <700 1.0 <5 4.0 393
3EZ7.5D5 7.5 100 <2.0 <700 0.5 <5 5.0 360
3EZ8.2D5 8.2 91 <2.3 <700 0.5 <5 6.0 330
3EZ9.1D5 9.1 82 <2.5 <700 0.5 <3 7.0 297
3EZ10D5 10 75 <3.5 <700 0.25 <3 7.6 270
3EZ11D5 11 68 <4 <700 0.25 <1 8.4 225
3EZ12D5 12 63 <4.5 <700 0.25 <1 9.4 246
3EZ13D5 13 58 <4.5 <700 0.25 <0.5 9.9 208
3EZ14D5 14 53 <5 <700 0.25 <0.5 10.6 193
3EZ15D5 15 50 <5.5 <700 0.25 <0.5 11.4 180
3EZ16D5 16 47 <5.5 <700 0.25 <0.5 12.2 169
3EZ17D5 17 44 <6 <750 0.25 <0.5 13 159
3EZ18D5 18 42 <6 <750 0.25 <0.5 13.7 150
3EZ19D5 19 40 <7 <750 0.25 <0.5 14.4 142
3EZ20D5 20 37 <7 <750 0.25 <0.5 15.2 135
3EZ22D5 22 34 <8 <750 0.25 <0.5 16.7 123
3EZ24D5 24 31 <9 <750 0.25 <0.5 18.2 112
3EZ27D5 27 28 <10 <750 0.25 <0.5 20.6 100
3EZ28D5 28 27 <12 <750 0.25 <0.5 21 96
3EZ30D5 30 25 <16 <1000 0.25 <0.5 22.5 90
3EZ33D5 33 23 <20 <1000 0.25 <0.5 25.1 82
3EZ36D5 36 21 <22 <1000 0.25 <0.5 27.4 75
3EZ39D5 39 19 <28 <1000 0.25 <0.5 29.7 69
Excel Semiconductor
1) Based on DC-measurement at thermal equilibrium while maintaining the lead temperature(TL) at 25℃,
9.5mm (3/8”) from the diode body.
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3EZ3.9D5~3EZ39D5
Dimensions in mm
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX
A 1.000 --- 25.40 ---
B 0.230 0.300 5.80 7.60
C 0.026 0.034 0.70 0.90
D 0.104 0.140 2.60 3.60
Cathode identification
Case: molded plastic DO-15
Polarity: cathode band
Marking: type number
Marking
3EZ16D5
Excel Semiconductor
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