STPSC8065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Features AEC-Q101 qualified No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability PPAP capable Operating Tj from -40 C to 175 C ECOPACK(R)2 compliant component July 2017 Table 1: Device summary DocID030729 Rev 2 This is information on a product in full production. Symbol Value IF(AV) 8A VRRM 650 V Tj (max.) 175 C VF (typ.) 1.30 V 1/9 www.st.com Characteristics 1 STPSC8065-Y Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Tj from -40 C to 175 C C(1), Unit 650 V 22 A 8 A A IF(AV) Average forward current TC = 150 IFRM Repetitive peak forward current Tc = 150 C, Tj = 175 C, = 0.1 36 tp = 10 ms sinusoidal, Tc = 25 C 46 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 125 C 38 tp = 10 s square, Tc = 25 C 200 Tstg DC current Value Storage temperature range Tj Operating junction temperature(2) A -65 to +175 C -40 to +175 C Notes: (1)Value (2)(dP based on Rth(j-c) max. tot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Value Symbol Rth(j-c) Parameter Unit Junction to case Typ. Max. 1.1 1.65 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 C Tj = 150 C VR = VRRM Tj = 25 C Tj = 150 C IF = 8 A Tj = 175 C Notes: (1)Pulse test: tp = 5 ms, < 2% (2)Pulse test: tp = 500 s, < 2% To evaluate the conduction losses, use the following equation: P = 0.95 x IF(AV) + 0.087 x IF2(RMS) 2/9 DocID030729 Rev 2 Min. Typ. Max. - 2 105 - 20 750 - 1.30 1.45 - 1.45 1.65 - 1.50 Unit A V Characteristics STPSC8065-Y Table 5: Dynamic electrical characteristics Symbol QCj(1) Cj Parameter Test conditions Total capacitive charge Total capacitance Typ. Unit VR = 400 V 28 nC VR = 0 V, Tc = 25 C, F = 1 MHz 540 VR = 400 V, Tc = 25 C, F = 1 MHz 45 pF Notes: (1)Most accurate value for the capacitive charge: = 0 ( ) * DocID030729 Rev 2 3/9 Characteristics 1.1 STPSC8065-Y Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values) Figure 2: Reverse leakage current versus reverse voltage applied (typical values) IF (A) IR (A) 16 1.E+02 Pulse test : tp=500s 14 Tj=175 C Ta=100 C 1.E+01 12 Tj=150 C Ta=150 C 10 1.E+00 8 Ta=25 C Ta=175 C 1.E-01 6 4 Tj=25 C 1.E-02 2 Ta= -40 C VR(V) VF (V) 1.E-03 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 2.4 50 100 150 200 250 300 350 400 450 500 550 600 650 Figure 4: Junction capacitance versus reverse voltage applied (typical values) Figure 3: Peak forward current versus case temperature Cj(pF) IM(A) 80 600 T = 0.1 F=1 MHz VOSC =30 mVRMS Tj=25 C 500 =tp/T 60 tp 400 = 0.3 40 300 = 0.5 200 20 = 0.7 =1 100 VR(V) TC(C) 0 0 25 50 75 0 100 125 150 175 0.1 Zth(j-c) /Rth(j-c) 10.0 100.0 1000.0 Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration 1.E+03 1.0 1.0 IFSM(A) 0.9 0.8 0.7 Ta=25 C 0.6 0.5 1.E+02 Ta=125 C 0.4 0.3 0.2 Single pulse 0.1 t p(s) 0.0 1.E-05 4/9 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 DocID030729 Rev 2 t p(s) 1.E-04 1.E-03 1.E-02 Characteristics STPSC8065-Y Figure 7: Total capacitive charges versus reverse voltage applied (typical values) Qcj(nC) 30 25 20 15 10 5 VR (V) 0 0 50 100 150 200 250 DocID030729 Rev 2 300 350 400 5/9 Package information 2 STPSC8065-Y Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N*m Maximum torque value: 0.7 N*m TO-220AC package information Figure 8: TO-220AC package outline 6/9 DocID030729 Rev 2 Package information STPSC8065-Y Table 6: TO-220AC package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M OI 2.6 typ. 3.75 0.102 typ. 3.85 DocID030729 Rev 2 0.147 0.151 7/9 Ordering information 3 STPSC8065-Y Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STPSC8065DY PSC8065DY TO-220AC 1.86 g 50 Tube Revision history Table 8: Document revision history 8/9 Date Revision Changes 13-Jun-2017 1 First issue. 18-Jul-2017 2 Updated Table 4: "Static electrical characteristics". DocID030729 Rev 2 STPSC8065-Y IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2017 STMicroelectronics - All rights reserved DocID030729 Rev 2 9/9