Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 100V
▼ Single Drive Requirement RDS(ON) 80mΩ
▼ RoHS Compliant & Halogen-Free ID23A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.77
Pulsed Drain Current180
Total Power Dissipation 96
Continuous Drain Current, VGS @ 10V 23
Continuous Drain Current, VGS @ 10V 14.6
Drain-Source Voltage 100
Gate-Source Voltage +20
AP25N10GH/J-HF
Parameter Rating
200906163
Halogen-Free Product
1
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP25N10GJ)
are available for low-profile applications.
GDSTO-251(J)
GDSTO-252(H)
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 100 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.14 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=16A - - 80 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=16A - 14 - S
IDSS Drain-Source Leakage Current VDS=100V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=80V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=16A - 19 30 nC
Qgs Gate-Source Charge VDS=80V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC
td(on) Turn-on Delay Time2VDD=50V - 10 - ns
trRise Time ID=16A - 28 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 17 - ns
tfFall Time RD=3.125Ω-2-
ns
Ciss Input Capacitance VGS=0V - 1060 1700 pF
Coss Output Capacitance VDS=25V - 270 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF
RgGate Resistance f=1.0MHz - 1.5 2.3 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=16A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=16A, VGS=0V - 90 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 380 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP25N10GH/J-HF
2
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP25N10GH/J-HF
0
10
20
30
40
50
0246810
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
9.0V
8.0V
7.0V
VG=5.0V
0
10
20
30
40
024681012
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC
10V
9.0V
8.0V
7.0V
VG=5.0V
50
70
90
110
130
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=12A
TC=25oC
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=16A
VG=10V
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.3
0.7
1.1
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP25N10GH/J-HF
Q
VG
10V
QGS QGD
QG
Charge
1
10
100
1000
10000
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0 4 8 12 16 20 24
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =64V
VDS =80V
VDS =100V
I
D=16A
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
5
10
15
20
25
0246810
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=25oC
VDS =5V Tj=150oC
