AP25N10GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Single Drive Requirement RoHS Compliant & Halogen-Free BVDSS 100V RDS(ON) 80m ID G 23A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP25N10GJ) are available for low-profile applications. G D D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage +20 V ID@TC=25 Continuous Drain Current, VGS @ 10V 23 A ID@TC=100 Continuous Drain Current, VGS @ 10V 14.6 A 1 IDM Pulsed Drain Current 80 A PD@TC=25 Total Power Dissipation 96 W Linear Derating Factor 0.77 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 1.3 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 200906163 AP25N10GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 100 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.14 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=16A - - 80 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=16A - 14 - S IDSS Drain-Source Leakage Current VDS=100V, VGS=0V - - 25 uA Drain-Source Leakage Current (T j=125 C) VDS=80V, VGS=0V - - 250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=16A - 19 30 nC VGS=0V, ID=1mA o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=80V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6 - nC VDD=50V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=16A - 28 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 17 - ns tf Fall Time RD=3.125 - 2 - ns Ciss Input Capacitance VGS=0V - 1060 1700 pF Coss Output Capacitance VDS=25V - 270 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Rg Gate Resistance f=1.0MHz - 1.5 2.3 Min. Typ. IS=16A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=16A, VGS=0V - 90 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 380 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP25N10GH/J-HF 50 40 10V 9 .0V 8 .0V 7.0V T C =25 C ID , Drain Current (A) 40 10V 9 .0V 8 .0V 7.0V T C = 150 o C ID , Drain Current (A) o 30 20 30 20 V G = 5 .0V 10 V G = 5 .0V 10 0 0 0 2 4 6 8 10 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 130 2.4 I D = 12 A I D =16A V G =10V T C =25 o C 2.0 Normalized RDS(ON) RDS(ON) (m) 110 90 1.6 1.2 70 0.8 0.4 50 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 20 Normalized VGS(th) (V) 16 IS(A) 12 T j =150 o C 8 T j =25 o C 1.1 0.7 4 0 0.3 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP25N10GH/J-HF f=1.0MHz 10000 14 I D = 16 A V DS = 64 V V DS = 80 V V DS = 100 V 10 C iss 1000 C oss 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 100 4 C rss 10 2 1 0 0 4 8 12 16 20 1 24 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us 10 ID (A) 1ms 10ms 100ms 1s DC 1 o T C =25 C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 25 V DS =5V o T j =150 C o T j =25 C VG ID , Drain Current (A) 20 QG 10V 15 QGS QGD 10 5 Charge Q 0 0 2 4 6 8 10 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4