
LESHAN RADIO COMPANY, LTD.
G18–1/2
1
3
2
MBD701
MMBD701LT1
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
MBD701 MMBD701LT1
Rating Symbol Value Unit
Reverse Voltage V R70 Volts
Forward Power Dissipation P F
@ T A = 25°C 280 200 mW
Derate above 25°C 2.8 2.0 mW/°C
Operating Junction T J°C
Temperature Range –55 to +125
Storage Temperature Range T stg –55 to +150 °C
DEVICE MARKING
MMBD701L T1 = 5H
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min typ Max Unit
Reverse Breakdown Voltage (I R = 10µAdc) V (BR)R 70 — — Volts
Total Capacitance (V R = 20 V, f = 1.0 MHz) Figure 1 C T — 0.5 1.0 pF
Reverse Leakage (V R = 35 V) Figure 3 I R — 9.0 200 nAdc
Forward Voltage (I F = 1.0 mAdc) Figure 4 V F— 0.42 0.5 Vdc
Forward Voltage (I F = 10 mAdc) Figure 4 V F— 0.7 1.0 Vdc
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.
70 VOLTS
HIGH-VOLTAGE
SILICON HOT-CARRIER
DETECTOR AND SWITCHING
DIODES
CASE 318–08, STYLE8
SOT– 23 (TO–236AB)
3
CATHODE 1
ANODE
These devices are designed primarily for high–efficiency UHF
and VHF detector applications. They are readily adaptable to many
other fast switching RF and digital applications. They are supplied
in an inexpensive plastic package for low–cost,high–volume
consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ V R = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)
Silicon Hot –Carrier Diodes