©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE210
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage - 40 V
VCEO Collector-Emitter Voltage - 25 V
VEBO Emitter-Base Voltage - 8 V
IC Collector Current - 5 A
PC Collector Dissipation (TC=25°C) 15 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parame ter Test Condit ion Min. Max. U nits
BVCEO Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 -25 V
ICBO Collector Cut-off Current VCB = -40V, IE = 0
VCB = - 40V, IE =0 @ TJ = 125°C-100
-100 nA
µA
IEBO Emitter Cut-off Current VBE = - 8V, IC = 0 -100 nA
hFE1
hFE2
hFE3
DC Current Gain VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
70
45
10 180
VCE(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA
IC = - 2A, IC = - 200mA
IC = - 5A, IB = - 1A
-0.3
-0.75
-1.8
V
V
V
VBE(sat) Base-Emitter Satura tion Voltage IC = - 5A, IB = - 1A -2.5 V
VBE(on) Base-Emitter ON Voltage VCE = - 1V, IC = - 2A -1.6 V
fT Current Gain Bandwidth Product VCE = - 10V, IC = - 100mA 65 MHz
Cob Output Capacitance VCB = - 10V, IE = 0, f = 1MHz 120 pF
MJE210
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.)
• Complement to MJE200
1TO-126
1. Emitter 2.Collector 3.Base
©2001 Fairchild Semiconductor Corporation
MJE210
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -1V
VCE = -2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10 IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.1 -1 -10 -100
-1
-10
-100
-1000 f=0.1MHZ
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR BASE VOLTAGE
-1 -10 -100
-0.1
-1
-10
-100
100µs
500µs
5ms
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
3
6
9
12
15
18
21
24
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE210
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2001 Fairchild Semiconductor Corporation Rev. G
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Contents
Features | Product status/pricing/packaging
Features
● Low Collector-Emitter Saturation
Voltage
● High DC Current Gain Bandwidth
Product: fT=65MHz @ IC=-100mA
(Min.)
● Complement to MJE200
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Product status/pricing/packaging
Product Product status Pricing* Package type Leads Packing method
MJE210STU Full Production $0.164 TO-126 3 RAIL
* 1,000 piece Budgetary Pricing
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