1MBI1600U4C-170 IGBT Modules IGBT MODULE (U series) 1700V / 1600A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Symbols VCES VGES Conditions Ic Continuous Ic pulse 1ms Tc=25C Tc=80C Tc=25C Tc=80C -Ic -Ic pulse 1ms Collector power dissipation Pc 1 device Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso AC : 1min. Mounting (*2) Screw torque Main Terminals (*2) Sense Terminals (*2) Maximum ratings 1700 20 2400 1600 4800 3200 1600 3200 9760 150 -40 to +125 3400 5.75 10 2.5 Units V V A W C C VAC N*m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 4.25-5.75 N*m (M6), Main Terminal : 8-10 N*m (M8), Sense Terminal : 1.7-2.5 N*m (M4) Electrical characteristics (at Tj= 25C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VCE (sat) (main terminal) VCE (sat) (chip) Cies ton tr toff tf VF (main terminal) VF (chip) trr R lead VGE = 0V, VCE = 1700V VCE = 0V, VGE = 20V VCE = 20V, IC = 1600mA Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Tj=25C Tj=125C Tj=25C Tj=125C = 0V, VCE = 10V, f = 1MHz VGE = 15V IC = 1600A VGE VCC = 900V, IC = 1600A VGE = 15V, Tj = 125C Rgon = 2.7, Rgoff = 1 VGE = 0V IF = 1600A IF = 1600A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics min. typ. max. 1.0 3200 5.5 6.5 7.5 2.47 2.65 2.87 2.25 2.40 2.65 150 1.80 0.85 1.30 0.35 2.02 2.40 2.22 1.80 2.15 2.00 0.35 0.134 - Units mA nA V V nF s V s m Note *3: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Symbols Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Characteristics min. typ. max. 0.013 0.023 0.006 - Units C/W 1MBI1600U4C-170 IGBT Modules Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25C ,chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C, chip 3600 3600 VGE=20V 15V 12V 2800 2400 10V 2000 1600 1200 800 8V 400 0 0.0 1.0 2.0 3.0 VGE=20V 15V 3200 Collector current : Ic [A] 4.0 2800 2400 2000 10V 1600 1200 800 8V 400 0 0.0 5.0 3600 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [A] 2400 2000 1600 1200 800 400 0 4.0 5.0 8 6 4 Ic=3200A Ic=1600A Ic=800A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 20 25 Dynamic Gate charge (typ.) Tj= 25C 1000 Cies 100 Cres 10 15 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance : Cies, Coes, Cres [ nF ] 3.0 10 Tj=125C 2800 1000 2.0 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C ,chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip 3200 1.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Tj=25C 12V Coes VCE 25 VGE 800 600 15 400 10 200 5 0 1 0 10 20 Collector-Emitter voltage : VCE [V] 0 30 1000 2000 3000 4000 5000 Gate charge : Qg [ nC ] 2 20 6000 Gate-Emitter voltage : VGE [V] Collector current : Ic [A] 3200 0 7000 1MBI1600U4C-170 IGBT Modules Switching time vs. Gate resistance (typ.) Switching time vs. Collector current (typ.) 2.2 ton 2.0 1.8 1.6 1.4 toff 1.2 tr 1.0 0.8 0.6 0.4 tf 0.2 Vcc=900V, Ic=1600A,VGE=15V, Tj=125C 6.0 Switching time : ton, tr, toff, tf [ us ] Switching time : ton, tr, toff, tf [ us ] 2.4 Vcc=900V, VGE=15V, Rgon=2.7, Rgoff=1, Tj= 125C ton 5.0 4.0 toff 3.0 tr 2.0 1.0 tf 0.0 0.0 0 400 800 1200 1600 2000 2400 0 2800 2 Switching loss vs. Collector current (typ.) Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eoff Eon 700 Err 600 500 400 300 200 100 0 VGE=15V ,Tj = 125C / chip 3600 Collector current : Ic [ A ] 3200 2800 2400 2000 1600 1200 800 400 0 800 1200 1600 14 Eon 1600 1400 1200 1000 Eoff 800 600 400 Err 200 0 2 4 6 8 10 Gate resistance : Rg [ ] Reverse bias safe operating area (max.) 400 12 1800 0 0 400 800 1200 1600 2000 2400 2800 Collector current : Ic [ A ] , Forward current : IF [ A ] 0 10 Vcc=900V, Ic=1600A,VGE=15V, Tj=125C 1100 800 8 Switching loss vs. Gate resistance (typ.) Vcc=900V, VGE=15V, Rgon=2.7, Rgoff=1, Tj= 125C 900 6 Gate resistance : Rg [ ] Collector current : Ic [ A ] 1000 4 2000 Collector - Emitter voltage : VCE [ V ] 3 12 14 1MBI1600U4C-170 2000 Tj=125C 2800 2400 2000 1600 1200 800 400 0 0.0 Thermal resistanse : Rth(j-c) [ C/W ] 1800 1.0 1.5 2.0 2.5 3.0 3.5 1400 1.4 1200 1.2 1000 1.0 800 0.8 600 trr 400 0.0100 IGBT 0.0010 0.010 0.100 1.000 Pulse width : Pw [ sec ] 4 0.6 0.4 0.2 400 800 0.0 1200 1600 2000 2400 2800 Forward current : IF [ A ] Transient thermal resistance (max.) 1.8 1.6 0 4.0 2.0 1600 0 0.5 FWD 0.0001 0.001 Irr 200 Forward on voltage : VF [ V ] 0.1000 Vcc=900V, VGE=15V, Rgon=2.7, Tj=125C Reverse recovery time : trr [us] Tj=25C 3200 Forward current : IF [ A ] Reverse recovery characteristics (typ.) Forward current vs. Forward on voltage (typ.) chip Reverse recovery current : Irr [ A ] 3600 IGBT Modules 1MBI1600U4C-170 IGBT Modules Outline Drawings, mm Equivalent Circuit Schematic main collector sense collector C gate G sense emitter E C C E E main emitter 5 1MBI1600U4C-170 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. 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