January 2014
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
1
FDD390N15ALZ
N-Channel PowerTrench® MOSFET
150 V, 26 A, 42 m
Features
•R
DS(on) = 33.4 m (Typ.) @ VGS = 10 V, ID = 26 A
•R
DS(on) = 42.2 m (Typ.) @ VGS = 4.5 V, ID = 20 A
• Fast Switching Speed
• Low Gate Charge, QG = 17.6 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
•RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Consumer Applicances
•LED TV
• Synchronous Rectification
• Uninterruptible Power Supplies
• Micro Solar Inverter
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDD390N15ALZ Unit
VDSS Drain to Source Voltage 150 V
VGSS Gate to Source Voltage ±20 V
IDDrain Current - Continuous (TC = 25oC) 26 A
- Continuous (TC = 100oC) 17
IDM Drain Current - Pulsed (Note 1) 104 A
EAS Single Pulsed Avalanche Energy (Note 2) 96 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 13 V/ns
PDPower Dissipation (TC = 25oC) 63 W
- Derate Above 25oC0.5W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FDD390N15ALZ Unit
RJC Thermal Resistance, Junction to Case, Max. 2.0 oC/W
RJA Thermal Resistance, Junction to Ambient, Max. 87
D-PAK
G
S
D
G
D
S
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
2
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDD390N15ALZ FDD390N15ALZ DPAK Tape and Reel 330 mm 16 mm 2500 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V 150 - - V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient ID = 250 A, Referenced to 25oC - 0.15 - V/oC
IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V - - 1 A
VDS = 120 V, TC = 125oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 A
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 A1.4-2.8V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 26 A - 33.4 42 m
VGS = 4.5 V, ID = 20 A - 42.2 64 m
gFS Forward Transconductance VDS = 10 V, ID = 26 A -50-S
Ciss Input Capacitance VDS = 75 V, VGS = 0 V,
f = 1 MHz
- 1323 1760 pF
Coss Output Capacitance - 93 120 pF
Crss Reverse Transfer Capacitance - 4 6 pF
Coss(er) Energy Related Output Capacitance VDS = 75 V, VGS = 0 V - 165 - pF
Qg(tot) Total Gate Charge at 10V VGS = 10 V VDS = 75 V,
ID = 26 A
(Note 4)
-17.639nC
Qg(tot) Total Gate Charge at 5V VGS = 4.5 V - 8.1 10.5 nC
Qgs Gate to Source Gate Charge -4.7-nC
Qgd Gate to Drain “Miller” Charge - 2.3 - nC
ESR Equivalent Series Resistance (G-S) f = 1 MHz - 1.48 -
td(on) Turn-On Delay Time
VDD = 75 V, ID = 26 A,
VGS = 10 V, RG = 4. 7
(Note 4)
-12.835.6ns
trTurn-On Rise Time - 9.3 28.6 ns
td(off) Turn-Off Delay Time - 26.9 63.8 ns
tfTurn-Off Fall Time - 3.2 16.4 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 26 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 104 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 26 A - - 1.25 V
trr Reverse Recovery Time VGS = 0 V, ISD = 26 A,
dIF/dt = 100 A/s
-70-ns
Qrr Reverse Recovery Charge - 169 - nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 3 mH, IAS = 6.75 A, starting TJ = 25C.
3. ISD 26 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature typical characteristics.
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
3
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10
0.05
0.1
1
10
100
1000
*Notes:
1. 250s Pulse Test
2. TC = 25oC
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
VGS = 10.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
123456
1
10
100
-55oC
150oC
*Notes:
1. VDS = 10V
2. 250s Pulse Test
25oC
ID, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
200
*Notes:
1. VGS = 0V
2. 250s Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 20406080100
20
40
60
80
100
*Note: TC = 25oC
VGS = 10V
VGS = 4.5V
RDS(ON) [m],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 100 200
2
10
100
1000
2000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 4 8 12 16 20
0
2
4
6
8
10
*Note: ID = 26A
VDS = 30V
VDS = 75V
VDS = 120V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
4
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability
-80 -40 0 40 80 120 160
0.90
0.95
1.00
1.05
1.10
*Notes:
1. VGS = 0V
2. ID = 250A
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-80 -40 0 40 80 120 160
0.4
0.8
1.2
1.6
2.0
2.4
2.6
*Notes:
1. VGS = 10V
2. ID = 26A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
1 10 100 200
0.01
0.1
1
10
100
200
100s
1ms
10ms
100ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
SINGLE PULSE
TC = 25oC
TJ = 150oC
RJC = 2.0oC/W
DC
25 50 75 100 125 150
0
5
10
15
20
25
30
VGS = 4.5V
RJC = 2.0oC/W
VGS = 10V
ID, Drain Current [A]
TC, Case Temperature [
oC]
0 306090120150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
EOSS, [J]
VDS, Drain to Source Voltage [V]
0.01 0.1 1 10 100
1
10
15
TJ = 25 oC
TJ = 125 oC
t
AV
, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
5
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1
0.01
0.1
1
3
0.01
0.1
0.2
0.05
0.02
*Notes:
1. ZJC(t) = 2.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.5
Single pulse
Thermal Response [ZJC]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
Z
JC
(t), Thermal Response [
o
C/W]
t
1
, Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
6
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
Figure 14. Gate Charge Test Circuit & Waveform
Figure 15. Resistive Switching Test Circuit & Waveforms
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VGS
IG = const.
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
7
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
8
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
Mechanical Dimensions
Figure 18. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2012 Fairchild Semiconductor Corporation
FDD390N15ALZ Rev. C4
www.fairchildsemi.com
9
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Rev. I66
tm
®
FDD390N15ALZ — N-Channel PowerTrench® MOSFET
