oNEC / DATA SHEET SILICON TRANSISTOR 2SD596 AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD 2.84+0.2 2940.2 PACKAGE DIMENSIONS in millimeters Marking ba] Qa 4 tf | onl 1 1 ' 3 | _ 1, Emitter a 2. Base | 3. Collector o DESCRIPTION mended for hybrid integrated circuit and other applications. FEATURES @ Micro package. @ High DC current gain. hee : 200 TYP. ( Vce = 1.0 V, Ic = 100 mA) Complimentary to NEC 2SB624 PNP Transistor. ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (T, = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Maximum Power Dissipation . Total Power Dissipation at 25 C Ambient Temperature (Maximum Temperatures , Storage Temperature Range. Operating Junction Temperature ELECTRICAL CHARACTERISTICS (T,=25 C) Vcso 30 VcEO 25 VeBo 5.0 - Ic ; 700 PY 200 Tstg ~55 to +150 ; 150 ' The 2SD596 is designed for use in small type equipments especially recom- mA mW TEST CONDITIONS ~ CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT Collector Cutoff Current IcBo 100 nA Vcp=30 V, ig =0 Emitter Cutoff Current jEBO 100 nA - Veg=5.0 V, I=0 DC Current Gain hFe4 110 200 400 VcE= 1.0 V, Ic= 100 ma * DC Current Gain NEED 50 Voce =1.0 V, I=700 mA * Base to Emitter Voltage VBE 600 640 -700 mV Vee =6.0.V, Ic=10 mA * Collector Saturation Voltage . VCE (sat! a 0.22 : 0.6 Vv Ic=700 mA, Igp=70mMA * Output Capacitance Cob 12 ope . Vcp=6.0 V; Ie =0, f= 10 MHz Gain Bandwidth Product fr 170 MHz Vee = 6.0 V; Ip =-10 mA - * Pulsed: PW < 350 us, Duty Cycle < 2 % hFE1 Classification Marking _ Dv1 Dv2 DV3 | DVv4 DVS hee 110 to 180. | 135 to 220 | 170 to 270. | 200 to 320 |; 250 to 400 Document No. D12988EJ3VODS00 (3rd edition) (Previous No. TC-1263B) Date Published October 1997 M Printed in Japan NEC Corporation 1984 NEC TYPICAL CHARACTERISTICS (T,=25 C) VBE (sat) Base Saturation Voltage V VCE(sat) Collector Saturation Voltage V Py Total Power Dissipation - mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Free air 200 1 | 150 NI 100 Ne 50 \I 0 25 50 75 100 125 150 Ta Ambient Temperature C COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1000 Vop=6.0 V 500 Puised 200 < 100 5 50 & 2 5 3 10 2 3 5 o COLLECTOR AND BASE SATURATION VOLTAGE 0.5 0.2 0.1 04, O86 06 07 a8 09 1.0 11 Vee ~Base to Emitter Voltage V vs. COLLECTOR CURRENT 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.1 0.2 io= 10-Ig Pulsed VBE(sat) 05 1 #2 5 10 20 50 100200 500 1000 \ Collector Current mA 2SD596 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 23 450 (400. pA \ 350 wA ga NLA 250 pA oy 3 N *& BA oy 150 AS 100 A ~ I ~Collector CurrentmA Ip=50 uA 0 2 4 6 8 10 Vce Collector to Emitter Voltage V DC CURRENT GAIN vs. COLLECTOR CURRENT Vce= 1.0 Pulsed 1000 & & 500 2 5 200 o & 100 ! tH 50 = 20 10 0102 05 1 2 5 10 20 50 100 200 500 1000 i Collector Current ~mA COLLECTOR TO EMITTER VOLTAGE vs. BASE CURRENT 1.0 Pulsed > | &% as 8 = <= 5 EVEL Lee B 0.6 8 rm g o & = 8 |\8 2 2 5 0.4 2 N 8 | N ul 0.2 X : 0 0.2 O02 0.5 i 2 5 10 20 50 100 lg Base CurrentmA NEC 2SD596 ft Gain Bandwidth Product ~MHz GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT Voe=6.0 V -2 ~5 10 20 ~50 . 100 ie ~ Emitter Current mA Cob Output Capacitance pF 0.1 0.2 OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f=1.0 MHz lg=0 0.5 1 2 5 10 20 50 100 VcpCollector to Base Voltage V NEC : . 2SD596 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. if customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti- radioactive design is not implemented in this product. M4 96.5