MMST3904
Document number: DS30082 Rev. 14 - 2
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MMST3904
K2N
YM
60V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
• BVCEO > 40V
• IC = 200mA Collector Current
• Epitaxial Pl anar Die Const ruction
• Ultra-Sm al l Surfac e Mount Package
• Complementary P NP Type: MMST3906
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimon y Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SOT323
• Case Material: Molded Plast ic. “Green” Molding Com pound.
UL Flamm abili t y Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Ti n Plated Leads, Solderabl e per
MIL-STD-202, Method 208
• Weight: 0.006 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
MMST3904-7-F
AEC-Q101
K2N
7
8
3,000
MMST3904Q-7-F
Automotive
K2N
7
8
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
D
E
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Symbol
Pin-out Top View
C
E
B
e3
SOT323
K2N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex:
D = 2016)
M or M = Month (ex: 9 = September)
MMST3904
Document number: DS30082 Rev. 14 - 2
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MMST3904
Absolute Ma ximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
PD
200
mW
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
625
°C/W
Operating and Storage Tem perature Range
TJ, TSTG
-55 to +150
°C
ESD Rating s (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Cl a ss
Electrostat ic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostat ic Discharge - Machine Model
ESD MM
400
V
C
Notes: 6. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMST3904
Document number: DS30082 Rev. 14 - 2
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MMST3904
Thermal Characteristics and Derating Information
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T, AMBIENT TEMPERATURE (°C)
A
Max Power Dissipation vs.
Ambient T emperature
150
200
250
300
350
0
400
MMST3904
Document number: DS30082 Rev. 14 - 2
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MMST3904
Electrical Characteristics (@TA = +25°C, unless otherwise spec ifi ed.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CH ARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage
BVCBO
60
V
IC = 10µA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
40
V
IC = 1mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
5
V
IE = 10µA, IC = 0
Collector Cutoff Current
ICEX
50
nA
VCE = 30V, VEB(OFF) = 3V
Base Cutoff Current
IBL
50
nA
VCE = 30V, VEB(OFF) = 3V
ON CHARACTERISTI CS (Note 8)
DC Current Gain hFE
40
70
100
60
30
300
I
C
= 100µA, V
CE
= 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 100mA, VCE = 1V
Collector-Emitter Saturation Voltage VCE(SAT) 0.25
0.30
V IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
Base-Emitter Saturation Voltage VBE(SAT)
0.65
0.85
0.95
V
I
C
= 10mA, I
B
= 1mA
IC = 50mA, IB = 5mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4
pF
VCB = 5V, f = 1.0 MHz , IE = 0
Input Capacitance
Cibo
8
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
1
10
kΩ
VCE = 10V, IC = 1mA,
f = 1.0MHz
Voltage Feedback Ratio
hre
0.5
8.0
x 10 -4
Small Signal Current Gain
hfe
100
400
Output Admittance
hoe
1
40
µS
Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure NF 5 dB
V
CC
= 5V, I
C
= 100µA,
RS = 1kΩ, f = 1MHz
SWITCHING CHARACTERISTICS
Delay Time
tD
35
ns
VCC = 3V, IC = 10mA,
VBE(OFF) = -0.5V, IB1 = 1mA
Rise Time
tR
35
ns
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMST3904
Document number: DS30082 Rev. 14 - 2
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MMST3904
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.1
1
10
0.1 110 100 1,000
V , BASE-EMITTER (V)
BE(SAT)
SATURATION VOLTAGE
I, COL LECTOR CURRENT (mA )
CT ypical Base-Emitter
Saturation Voltage vs. Collector Current
I
C
B
I= 10
0
5
15
10
0.1 110 100
C , INPUT CAPACITANCE (pF)
IBO
C , OUTPUT CAPACITANCE (pF)
OBO
V, COLLECTOR-BASE VOLT AGE (V)
CB
Input and Output Capacitance vs.
Collector-Base Voltage
Cibo
Cobo
f = 1MH z
1
10
1,000
100
0.1 110 1,000
100
h , DC CURRENT GAIN
FE
I, COLLECTOR CURRENT (mA )
C
T ypical DC Current Gain vs. Collector Current
T = - 25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
0.01
0.1
1
0.1 110 100 1,000
V , COLLECTOR-EMITTER (V)
CE(SAT)
SATURATION VOLTAGE
I, COL LECTOR CURRE NT (mA )
CT ypical Collector-Emitter
Saturation Voltage vs. Collector Current
IC
B
I= 10
MMST3904
Document number: DS30082 Rev. 14 - 2
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MMST3904
Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT323
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.470
Y
0.600
Y1
2.500
Y1 G
Y
X
C
SOT323
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
0.95
b
0.25
0.40
0.30
c
0.10
0.18
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
e1
1.20
1.40
1.30
F
0.375
0.475
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
a
E1E
Fe1
b
L
c
e
A2
A1
D
MMST3904
Document number: DS30082 Rev. 14 - 2
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MMST3904
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTIO N).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor t he rights of others. Any Customer or user of this document or products described herein in such applicat ions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harml ess against all damages.
Diodes Incorporated does not warrant or accept any li ability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes I ncorporated products for any unintended or unauthorized application, Customers shall indemnif y and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirect l y, any claim of personal injury or death associated with such unintended or unauthori zed appli cation.
Products descri bed herein may be covered by one or more United Stat es, international or forei gn patents pending. Product nam es and m arkings
noted herein may also be covered by one or more United States, international or forei gn trademarks.
This document is written i n English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative f orm at released by Diodes I ncorporat ed.
LIFE SU PP O R T
Diodes Inc orporated products are spec ifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Off icer of Diodes I ncorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with inst ruct i ons for use provided i n the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in t he safety and regulatory ramifications of their life support devic es or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety -related requirem ents concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representati ves against any damages arisi ng out of the use of Diodes Incorporated products i n such safety -c ri tical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
